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With a band gap of 2.4 eV, CdS has been extensively explored for photocatalytic applications under visible light irradiation. In this study, CdS nanoparticles have been investigated for the tribocatalytic degradation of concentrated Rhodamine B (RhB) and methyl orange (MO) solutions. For CdS nanoparticles in a glass beaker, 78.9% of 50 mg/L RhB and 69.8% of 20 mg/L MO solutions were degraded after 8 h and 24 h of magnetic stirring using Teflon magnetic rotary disks, respectively. While for CdS nanoparticles in a beaker with Al2O3 coated on its bottom, 99.8% of the RhB solution was degraded after 8 h of magnetic stirring and 95.6% of the MO solution was degraded after 12 h of magnetic stirring. Moreover, another contrast was observed between the two beaker bottoms—a new peak at 250 nm in UV–visible absorption spectra was only observed for the MO degradation by CdS in the as-received glass beaker, which indicates that MO molecules were only broken into smaller organic molecules in that case. These findings are meaningful for expanding the catalytic applications of CdS and for achieving a better understanding of tribocatalysis as well. [ABSTRACT FROM AUTHOR]

GaN is more stable than most metal oxide semiconductors for the photocatalytic degradation of organic pollutants in harsh conditions, while its catalytic efficiency has been difficult to be substantially improved. In this study, the tribocatalytic degradation of organic dyes by GaN nanoparticles has been investigated. Stimulated through magnetic stirring using homemade Teflon magnetic rotary disks in glass beakers, the GaN nanoparticles were found to induce negligible degradation in rhodamine B (RhB) and methyl orange (MO) solutions. Surprisingly, the degradation was greatly enhanced in beakers with Ti and Al2O3 coatings on their bottoms: 99.2% and 99.8% of the 20 mg/L RhB solutions were degraded in 3 h for the Ti and Al2O3 coatings, respectively, and 56% and 60.2% of the 20 mg/L MO solutions were degraded in 24 h for the Ti and Al2O3 coatings, respectively. Moreover, the MO molecules were only broken into smaller organic molecules for the Ti coating, while they were completely degraded for the Al2O3 coating. These findings are important for the catalytic degradation of organic pollutants by GaN in harsh environments and for achieving a better understanding of tribocatalysis as well. [ABSTRACT FROM AUTHOR]

The intrinsic flexoelectric effect observed in oxide materials often falls below the desired threshold for practical applications. In this work, we demonstrate proton doping in insulating rutile TiO2 crystal as an effective approach to significantly increase flexoelectricity by more than two orders of magnitude. We attribute the noteworthy enhancement of flexoelectricity to the dual impact of proton doping in oxide materials. First, proton doping serves to induce the presence of charge carriers, resulting in the generation of flexoelectric currents. Second, proton doping induces expansion and distortion of the lattice structure, leading to an amplified flexoelectric field when the crystal experiences a strain gradient. The formation of O–H bonding in TiO2 crystal provides another route to break centrosymmetry according to lattice distortion of the TiO2 lattice, resulting in a larger flexoelectric field. In addition, the introduction of proton doping in TiO2 single crystals leads to a substantial increase in photocurrent by effectively flattening the interfacial Schottky junction. This phenomenon results in a three-order of magnitude enhancement of the photocurrent. Our work broadens the horizon of study on dielectric materials through proton doping and may also provide an approach that enables the utilization of dielectric materials in energy conversion applications. [ABSTRACT FROM AUTHOR]

The intrinsic flexoelectric effect observed in oxide materials often falls below the desired threshold for practical applications. In this work, we demonstrate proton doping in insulating rutile TiO2 crystal as an effective approach to significantly increase flexoelectricity by more than two orders of magnitude. We attribute the noteworthy enhancement of flexoelectricity to the dual impact of proton doping in oxide materials. First, proton doping serves to induce the presence of charge carriers, resulting in the generation of flexoelectric currents. Second, proton doping induces expansion and distortion of the lattice structure, leading to an amplified flexoelectric field when the crystal experiences a strain gradient. The formation of O–H bonding in TiO2 crystal provides another route to break centrosymmetry according to lattice distortion of the TiO2 lattice, resulting in a larger flexoelectric field. In addition, the introduction of proton doping in TiO2 single crystals leads to a substantial increase in photocurrent by effectively flattening the interfacial Schottky junction. This phenomenon results in a three-order of magnitude enhancement of the photocurrent. Our work broadens the horizon of study on dielectric materials through proton doping and may also provide an approach that enables the utilization of dielectric materials in energy conversion applications. [ABSTRACT FROM AUTHOR]