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We manipulated the stacking configuration of a few-layer MoS2 to investigate the impact of interlayer coupling on electrical band engineering. By simultaneously synthesizing two distinct stacking types of MoS2 islands, wedding cake (W) and spiral (S), on the same substrate, we explored layer-dependent electrical properties under identical experimental conditions. We used multiple scanning probe microscopy techniques to map local electronic properties with respect to the number of layers, stacking configurations, and local heterogeneities. First-principles calculations verified the role of distinct interlayer coupling in terms of the interlayer distance. Our findings highlight the critical role of interlayer coupling in applications of transition metal dichalcogenides. [ABSTRACT FROM AUTHOR]

Structural stability, local density of states, bonding information, and charge distribution differences of C‐substituted ZnO (C/VZnxOy) monolayer structures, as well as their interactions with lithium atoms, are investigated using the density functional theory (DFT) method. The energy required to generate vacancies in pristine ZnO monolayers is considerably high, but since the C atoms are strongly adsorbed in the vacant sites, the energy required to form C/VZnxOy structures is reduced. These lattice substitutions cause an alteration of the Zn d‐states. The bonding analysis shows that the C−O interaction is stronger than the C−Zn interaction. So, it generates high stability for these structures. Furthermore, because the development of C/VZnxOy is aimed at lithium battery electrode applications, the most fundamental thing that needs to be examined initially is the interaction between the C/VZnxOy surfaces and the lithium atoms. Li3 strongly binds on all C/VZnxOy surfaces, and it turns to Li3+ based on a simple analysis of charge distribution differences. These findings will have a substantial impact on the future development of ZnO monolayers, and their potential as lithium battery electrodes can be studied further. [ABSTRACT FROM AUTHOR]

We exploit InSb’s magnetic-induced optical properties to design THz sub-wavelength antennas that actively tune the radiative decay rates of dipole emitters at their proximity. The proposed designs include a spherical InSb antenna and a cylindrical Si-InSb hybrid antenna demonstrating distinct behaviors. The former dramatically enhances both radiative and non-radiative decay rates in the epsilon-near-zero region due to the dominant contribution of the Zeeman-splitting electric octupole mode. The latter realizes significant radiative decay rate enhancement via magnetic octupole mode, mitigating the quenching process and accelerating the photon production rate. A deep-learning-based optimization of emitter positioning further enhances the quantum efficiency of the proposed hybrid system. These novel mechanisms are promising for tunable THz single-photon sources in integrated quantum networks.

In this paper, we first characterize a superlattice structure created by repeating a heterostructure formed from two armchair graphene nanoribbon (AGNR) segments with different widths. We investigate the electronic and transport properties of this structure by varying its widths and lengths to demonstrate the tunability of its overall band gap. The plot of the local density of states shows the formation of localized states at the low band gap segments of the superlattice. The superlattice is then used as a barrier to create a double barrier quantum well (DBQW) to design a proposed resonant tunneling diode (RTD) structure. We observe this device's negative differential resistance (NDR) operation for a range of bias voltages between the contacts. We study the effect of dimensional parameters on the RTD performance. The non-equilibrium Green's function method, based on a tight-binding model, is employed for numerical computation. • Tight binding approach considering overlapping matrix and hopping parameter up to 3rd nearest neighbor. • Band gap modulation of U-cut edge patterned AGNR. • Transport properties of DBQWs for graphene nanoribbon using Non equilibrium green's function. • LDOS at the quasi bound state due to quantum well. • Performance of graphene based Resonant Tunneling Diode. [ABSTRACT FROM AUTHOR]

SnSe, an environmental-friendly group-IV monochalcogenide semiconductor, demonstrates outstanding performance in various applications ranging from thermoelectric devices to solar energy harvesting. Its ultrathin films show promise in the fabrication of ferroelectric nonvolatile devices. However, the microscopic identification and manipulation of point defects in ultrathin SnSe single crystalline films, which significantly impact their electronic structure, have been inadequately studied. This study presents a comprehensive investigation of point defects in monolayer SnSe films grown via molecular beam epitaxy. By combining scanning tunneling microscopy (STM) characterization with first-principles calculations, we identified four types of atomic/molecular vacancies, four types of atomic substitutions, and three types of extrinsic defects. Notably, we have demonstrated the ability to convert a substitutional defect into a vacancy and to reposition an adsorbate by manipulating a single atom or molecule using an STM tip. We have also analyzed the local atomic displacement induced by the vacancies. This work provides a solid foundation for engineering the electronic structure of future SnSe-based nanodevices.