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In the field of biomemorizers, the simultaneous enhancement of resistive switching (RS) performance and environmental robustness, and the understanding the RS mechanism involving interfacial interaction is still challengeable. Herein, the bio-composites by encapsulating graphene (GR), graphene oxide (GO) and reduced graphene oxide (RGO) into chitosan (CS) have been fabricated as memory devices with the structure of FTO/bio-composite/Ag. Among them, FTO/GO@CS(12 %)/Ag biomemorizer exhibits the best RS performance with high ON/OFF ratio (105.92), and it possesses good thermal (170 °C) and irradiation stabilities (UV exposure for 96 h). The RS mechanism is due to the migration of oxygen vacancies accompanied by formation of Ag conducting filaments in the bio-composite films. Therefore, the enhanced resistive switching performance after encapsulating into CS can be explained as the increment of defects, the higher current densities and quenched radicals. Specially, for the first time we find the presence of voltage-induced packing mode changes in GO@CS composite, which can facilitate the migration of oxygen vacancies and render its best RS performance. In all, the more carboxyl groups can strengthen the GO-CS interfacial interactions through the formation of stable hydrogen bonding network and covalent bonds, which can enhance the stabilities and makes the composites be more sensitive to electrical stimulus. The rules drawn in this work will be significant for the construction of new biomemorizers with good environmental robustness. [Display omitted] • Graphene derivants (graphene, graphene oxide and reduced graphene oxide) have been encapsulated in chitosan to construct biomemorizers. • FTO/GO@CS (12 %)/Ag biomemorizer exhibited the good RS performance with high ON/OFF ratio and excellent thermal/irradiation stabilities. • The presence of voltage-induced packing mode changes in bio-composites can facilitate the migration of oxygen vacancies. • The more carboxyl groups can strengthen the GO-CS interfacial interactions, which can enhance the stabilities and makes the composites be more sensitive to electrical stimulus. [ABSTRACT FROM AUTHOR]