Search

The performance of superconducting qubits is often limited by dissipation and two-level systems (TLS) losses. The dominant sources of these losses are believed to originate from amorphous materials and defects at interfaces and surfaces, likely as a result of fabrication processes or ambient exposure. Here, we explore a novel wet chemical surface treatment at the Josephson junction-substrate and the substrate-air interfaces by replacing a buffered oxide etch (BOE) cleaning process with one that uses hydrofluoric acid followed by aqueous ammonium fluoride. We show that the ammonium fluoride etch process results in a statistically significant improvement in median $\text{T}_1$ by $\sim22\%$ ($p=0.002$), and a reduction in the number of strongly-coupled TLS in the tunable frequency range. Microwave resonator measurements on samples treated with the ammonium fluoride etch prior to niobium deposition also show $\sim33\%$ lower TLS-induced loss tangent compared to the BOE treated samples. As the chemical treatment primarily modifies the Josephson junction-substrate interface and substrate-air interface, we perform targeted chemical and structural characterizations to examine materials' differences at these interfaces and identify multiple microscopic changes that could contribute to decreased TLS.

The effect of annealing on the superconducting properties of niobium single crystals cut from the same master boule was studied by local and global magnetic measurements, as well as scanning tunneling microscopy (STM). The formation of large hydride precipitates was observed in unannealed samples. The variation in structural and magnetic properties was studied after annealing under high vacuum at 800 C, 1400 C, and near the melting point of niobium (2477 C) for a few seconds. The initial samples had a high hydrogen content. Polarized optics and magneto-optical studies show that the formation of large niobium hydride precipitates is suppressed already by 800 C annealing. However, the overall superconducting properties in the annealed samples did not improve after annealing, and in fact, worsened. The superconducting transition temperature decreased, the upper critical field increased, and the pinning strength increased. Parallel studies were conducted using STM, where the sample was annealed initially at 400 C, measured, annealed again at 1700 C, and measured again. These studies revealed a ``dirty'' superconducting gap with a significant spatial variation of tunneling conductance after annealing at 400 C. The clean gap was recovered after annealing at 1700 C. It is likely that these results are due to oxygen redistribution near the surface, which is always covered by oxide layers in as-grown crystals. Overall, the results indicate that vacuum annealing at least up to 1400 C, while expected to remove a large amount of hydrogen, introduces additional nanosized defects, perhaps hydride precipitates, that act as efficient pair-breaking and pinning centers.

Nanoscale structural and electronic heterogeneities are prevalent in condensed matter physics. Investigating these heterogeneities in three dimensions (3D) has become an important task for understanding their material properties. To provide a tool to unravel the connection between nanoscale heterogeneity and macroscopic emergent properties in magnetic materials, scanning transmission X-ray microscopy (STXM) is combined with X-ray magnetic circular dichroism (XMCD). A vector tomography algorithm has been developed to reconstruct the full 3D magnetic vector field without any prior assumptions or knowledge. 2D STXM projections of single crystalline \ndfeb\ pillars are recorded for two different sample tilt angles while rotating around the vertical tomographic axis using $120$ nm X-ray beams with left and right circular polarization. Image alignment and iterative registration has been implemented, based on the 2D STXM projections for the two tilts. Dichroic projections obtained from difference images are used for the tomographic reconstruction to obtain the 3D magnetization distribution at the nanoscale., Comment: 10 pages, 8 figures

We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias to a heated tunnel barrier, giant increases in the room temperature resistance, greater than 70%, can be achieved. The rate of resistance change is shown to be strongly temperature-dependent, and is independent of junction size in the sub-micron regime. In order to measure their tunneling properties at mK temperatures, we characterized transmon qubit junctions treated with this alternating-bias assisted annealing (ABAA) technique. The measured frequencies follow the Ambegaokar-Baratoff relation between the shifted resistance and critical current. Further, these studies show a reduction of junction-contributed loss on the order of $\approx 2 \times10^{-6}$, along with a significant reduction in resonant- and off-resonant-two level system defects when compared to untreated samples. Imaging with high-resolution TEM shows that the barrier is still predominantly amorphous with a more uniform distribution of aluminum coordination across the barrier relative to untreated junctions. This new approach is expected to be widely applicable to a broad range of devices that rely on amorphous aluminum oxide, as well as the many other metal-insulator-metal structures used in modern electronics.