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Ferroelectric Rashba semiconductors (FERSCs) such as α-GeTe are promising candidates for energy-efficient information technologies exploiting spin-orbit coupling (SOC) and are termed spin-orbitronics. In this work, the thickness limit of the Rashba-SOC effect in α-GeTe films is investigated. We demonstrate, using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations performed on pristine GeTe, that down to 1 nm, GeTe(111) films on a Sb-covered Si(111) substrate continuously exhibit a giant Rashba effect characterized, at 1 nm, by a constant of 5.2 ± 0.5 eV·Å. X-ray photoemission spectroscopy (XPS) allows the understanding of the persistence of the Rashba effect by evidencing a compensation of Ge vacancy defects resulting from the insertion of Sb interfacial atoms in the early stage growth of the GeTe(111) films.

Epitaxial growth of WTe 2 offers significant advantages, including the production of high-quality films, possible long-range in-plane ordering, and precise control over layer thicknesses. However, the mean island size of WTe 2 grown by molecular beam epitaxy (MBE) in the literature is only a few tens of nanometers, which is not suitable for the implementation of devices at large lateral scales. Here we report the growth of T d -WTe 2 ultrathin films by MBE on monolayer (ML) graphene, reaching a mean flake size of ≃110 nm, which is, on overage, more than three times larger than previous results. WTe 2 films thicker than 5 nm have been successfully synthesized and exhibit the expected Td phase atomic structure. We rationalize the epitaxial growth of T d -WTe 2 and propose a simple model to estimate the mean flake size as a function of growth parameters that can be applied to other transition metal dichalcogenides (TMDCs). Based on nucleation theory and the Kolmogorov-Johnson-Meh-Avrami (KJMA) equation, our analytical model supports experimental data showing a critical coverage of 0.13 ML above which WTe 2 nucleation becomes negligible. The quality of monolayer WTe 2 films is demonstrated by electronic band structure analysis using angle-resolved photoemission spectroscopy (ARPES), which is in agreement with first-principles calculations performed on free-standing WTe 2 and previous reports. We found electron pockets at the Fermi level, indicating a n -type doping of WTe 2 with an electron density of n = 2.0 ± 0.5 × 10 12 cm -2 for each electron pocket.