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This study introduces a novel approach for fabricating vertically stacked mini-LED arrays, integrating InGaN yellow and blue epitaxial layers with a stress buffer layer to enhance optoelectronic characteristics and structural stability. This method significantly simplifies the LED design by reducing the need for RGB configurations, thus lowering costs and system complexity. Employing vertical stacking integration technology, the design achieves high-density, efficient white light production suitable for multifunctional applications, including automotive lighting and outdoor signage. Experimental results demonstrate the exceptional performance of the stacked yellow and blue mini-LEDs in terms of luminous efficiency, wavelength precision, and thermal stability. The study also explores the performance of these LEDs under varying temperature conditions and their long-term reliability, indicating that InGaN-based yellow LEDs offer superior performance over traditional AlGaInP yellow LEDs, particularly in high-temperature environments. This technology promises significant advancements in the design and application of lighting systems, with potential implications for both automotive and general illumination markets. [ABSTRACT FROM AUTHOR]

The field of next‐generation microdisplays is flourishing. Relevant display technologies, such as mini‐light emission diodes (mini‐LEDs), micro‐organic light emission diodes (micro‐OLEDs), and micro‐light emission diodes (micro‐LEDs) are thus in the urgent stage of development. From this perspective, comprehensive and systematical analyzes are conducted for the aforesaid microdisplay configurations. A holistic view of microdisplay technologies is developed with the corresponding performance metrics, providing a path for miscellaneous scenarios. Among these scenarios, the applications in augmented reality (AR), virtual reality (VR), wearable devices, and head‐up displays (HUD) are currently attracting considerable attention for deeper human‐digital interactions. However, there is a multiplicity of obstacles and challenges hindering such development. Nevertheless, recent advances in microdisplay technologies hold tremendous promise for the paradigms of these applications, taking a leap forward for next‐generation microdisplays. This review presents perspectives, relevant materials, and the technology landscape for such ongoing display technologies, offering guidance on the design of advanced microdisplays. [ABSTRACT FROM AUTHOR]

Aluminum Gallium Nitride (AlGaN) ultraviolet‐C (UV‐C) micro‐light‐emitting diodes (microLEDs) offer significant advantages in terms of convenience, cost‐effectiveness, and environmental friendliness, positioning them as promising candidates for display applications. However, achieving the desired high efficiency and scalability for large displays with ultra‐fine pixels necessitates substantial progress beyond current experimental outcomes. This study showcases the application of AlGaN UV‐C microLED display panels and micro‐displays incorporating quantum dots (QDs) for color conversion. Sidewall treatment and atomic layer deposited (ALD) passivation effectively address dangling bonds and etching damages, leading to a notable enhancement of TM‐polarized light extraction efficiency (LEE). Moreover, dedicated strain modulation efforts successfully reduce the high Al content (over 50%) wafer bowling effect, facilitating the modularization of ultrafine‐pitch AlGaN UV‐C microLED panels. Consequently, the devices achieve a peak performance of over 5% external quantum efficiency (EQE) as the mesa size scales down to 3 μm. The highlighted 0.18‐inch UV‐C microLED display panels, featuring a 9 μm pixel size, are precisely controlled by a CMOS IC driver to achieve desired patterns. Serving as an efficient pumping source for perovskite quantum dots paper (PQDP), this UV‐C microLED display suggests the potential to revolutionize the full‐color display industry by providing an innovative and unconventional solution. [ABSTRACT FROM AUTHOR]

Aluminum Gallium Nitride (AlGaN) ultraviolet‐C (UV‐C) micro‐light‐emitting diodes (microLEDs) offer significant advantages in terms of convenience, cost‐effectiveness, and environmental friendliness, positioning them as promising candidates for display applications. However, achieving the desired high efficiency and scalability for large displays with ultra‐fine pixels necessitates substantial progress beyond current experimental outcomes. This study showcases the application of AlGaN UV‐C microLED display panels and micro‐displays incorporating quantum dots (QDs) for color conversion. Sidewall treatment and atomic layer deposited (ALD) passivation effectively address dangling bonds and etching damages, leading to a notable enhancement of TM‐polarized light extraction efficiency (LEE). Moreover, dedicated strain modulation efforts successfully reduce the high Al content (over 50%) wafer bowling effect, facilitating the modularization of ultrafine‐pitch AlGaN UV‐C microLED panels. Consequently, the devices achieve a peak performance of over 5% external quantum efficiency (EQE) as the mesa size scales down to 3 μm. The highlighted 0.18‐inch UV‐C microLED display panels, featuring a 9 μm pixel size, are precisely controlled by a CMOS IC driver to achieve desired patterns. Serving as an efficient pumping source for perovskite quantum dots paper (PQDP), this UV‐C microLED display suggests the potential to revolutionize the full‐color display industry by providing an innovative and unconventional solution. [ABSTRACT FROM AUTHOR]

The increasing need to control anthropogenic CO 2 emissions and conversion to fuels features the necessity for innovative solutions, one of which is photoelectrochemical system. This approach, capable of yielding gaseous production progressively, is facing challenges for liquid fuels generation due to optical, electrical, and catalytic properties. This study employs a standalone photoelectrochemical setup, in which InGaP/GaAs/Ge photoanode is integrated with tin-modified bismuth oxide cathode to convert CO 2 into liquid formic acid. In unassisted two-electrode assembly, setup exemplifies its operational durability for 100 h, during which it maintains an average Faradaic efficiency of 88% with 17.3 mmol L -1  h -1 of yield, thereby excelling in average solar-to-fuel conversion efficiency at 12% with 60% of electrical energy efficiency under one sun illumination. This significant performance is further associated with metal-semiconductor interface formation between tin and bismuth oxide, which bridges electronic structures and generates an electric field at their interfaces. This study outperforms conventional solar-driven systems in operational durability and liquid fuel production., (© 2024. The Author(s).)