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Brain-inspired computing architectures attempt to emulate the computations performed in the neurons and the synapses in human brain. Memristors with continuously tunable resistances are ideal building blocks for artificial synapses. Through investigating the memristor behaviors in a La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 multiferroic tunnel junction, it was found that the ferroelectric domain dynamics characteristics are influenced by the relative magnetization alignment of the electrodes, and the interfacial spin polarization is manipulated continuously by ferroelectric domain reversal, enriching our understanding of the magnetoelectric coupling fundamentally. This creates a functionality that not only the resistance of the memristor but also the synaptic plasticity form can be further manipulated, as demonstrated by the spike-timing-dependent plasticity investigations. Density functional theory calculations are carried out to describe the obtained magnetoelectric coupling, which is probably related to the Mn-Ti intermixing at the interfaces. The multiple and controllable plasticity characteristic in a single artificial synapse, to resemble the synaptic morphological alteration property in a biological synapse, will be conducive to the development of artificial intelligence., Comment: 5 figures, 20 pages

Functionalities in crystalline materials are determined by 3-dimensional collective interactions of atoms. The confinement of dimensionality in condensed matter provides an exotic research direction to understand the interaction of atoms, thus can be used to tailor or create new functionalities in material systems. In this study, a 2-dimensional transition metal oxide monolayer is constructed inside complex oxide heterostructures based on the theoretical predictions. The electrostatic boundary conditions of oxide monolayer in the heterostructure is carefully designed to tune the chemical, electronic, and magnetic states of oxide monolayer. The challenge of characterizing such an oxide monolayer is overcome by a combination of transmission electron microscopy, x-ray absorption spectroscopy, cross-sectional scanning tunneling microscopy, and electrical transport measurements. An intriguing metal-insulator transition associated with a magnetic transition is discovered in the MnO2 monolayer. This study paves a new route to understand the confinement of dimensionality and explore new intriguing phenomena in condensed matters., Comment: 23 pages, 6 figures

Metal-stuffed B-C compounds with sodalite clathrate structure have captured increasing attention due to their predicted exceptional superconductivity above liquid nitrogen temperature at ambient pressure. However, by neglecting the quantum lattice anharmonicity, the existing studies may result in an incomplete understanding of such a lightweight system. Here, using state-of-the-art *ab initio* methods incorporating quantum effects and machine learning potentials, we revisit the properties of a series of $XY\text{B}_{6}\text{C}_{6}$ clathrates where $X$ and $Y$ are metals. Our findings show that ionic quantum and anharmonic effects can harden the $E_g$ and $E_u$ vibrational modes, enabling the dynamical stability of 15 materials previously considered unstable in the harmonic approximation, including materials with previously unreported $(XY)^{1+}$ state, which is demonstrated here to be crucial to reach high critical temperatures. Further calculations based on the isotropic Migdal-Eliashberg equation demonstrate that the $T_c$ values for $\text{KRbB}_{6}\text{C}_{6}$ and $\text{RbB}_{3}\text{C}_{3}$ among these stabilized compounds are 87 and 98 K at 0 and 15 GPa, respectively, both being higher than $T_c$ of 77 K of $\text{KPbB}_{6}\text{C}_{6}$ at the anharmonic level. These record-high $T_c$ values, surpassing liquid nitrogen temperatures, emphasize the importance of anharmonic effects in stabilizing B-C clathrates with large electron-phonon coupling strength and advancing the search for high-$T_c$ superconductivity at (near) ambient pressure.

The rare physical property of negative thermal expansion (NTE) is intriguing because materials with large NTE over a wide temperature range can serve as high-performance thermal expansion compensators. However, applications of NTE are hindered by the fact that most of the available NTE materials show small magnitudes of NTE, and/or NTE occurs only in a narrow temperature range. Herein, for the first time, we investigated the effect of anion substitution instead of general Pb/Ti-site substitutions on the thermal expansion properties of a typical ferroelectric NTE material, PbTiO3. Intriguingly, the substitution of S for O in PbTiO3 further increases the tetragonality of PbTiO3. Consequently, an unusually enhanced NTE with an average volumetric coefficient of thermal expansion $\bar{\alpha}_V$ = -2.50 $\times$ 10$^{-5}$/K was achieved over a wide temperature range (300 -- 790 K), which is contrasted to that of pristine PbTiO3 ($\bar{\alpha}_V$ = -1.99 $\times$ 10$^{-5}$/K RT -- 763 K). The intensified NTE is attributed to the enhanced hybridization between Pb/Ti and O/S atoms by the substitution of S, as evidenced by our theoretical investigations. We therefore demonstrate a new technique for introducing mixed anions to achieve large NTE over a wide temperature range in PbTiO3-based ferroelectrics., Comment: 14 pages, 4 figures

Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samarium bondage. This film can be grown on a variety of substrates with a cost-effective chemical solution deposition. We observed a standard ferroelectric hysteresis loop down to a thickness of ~1 nanometer. The thin films with thicknesses that range from 1 to 4.56 nanometers possess a relatively large remanent polarization from 17 to 50 microcoulombs per square centimeter. We verified the structure with first-principles calculations, which also pointed to the material being a lone pair-driven ferroelectric material. The structure design of the ultrathin ferroelectric films has great potential for the manufacturing of atomic-scale electronic devices., Comment: preprint, 27 pages, 5 figures