1. Surface engineering of Al2O3 dielectric layer for all-sputtered-oxide transparent and flexible a-IGZO thin film transistor.
- Author
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Bui, Tan Tan, Kim, Kihyun, and Lee, Ji-Hoon
- Subjects
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THIN film transistors , *ALUMINUM oxide , *FLEXIBLE display systems , *FABRICATION (Manufacturing) , *SURFACE preparation - Abstract
Transparent flexible display devices have attracted massive attention in recent years owing to their practical applications that can be compatibly adapted to human demand and technological development. Worldwide researchers have studied flexible transparent thin film transistors (TFTs) to qualify them for the backplane component of future transparent and flexible displays. Simplifying the fabrication process of a TFT can be considered a critical need for reducing consumed cost, time, toxic chemicals. In this study, sputtering was utilized as a major fabrication method for manufacturing a transparent oxide TFT device, which demonstrated good mechanical flexibility. A simple surface treatment process was applied to enhance the susceptibility of the sputtered Al 2 O 3 dielectric through multiple coatings of solution processed Al 2 O 3. It is noteworthy that the transparent oxide TFT device exhibits a high optical transparency of 81.12% and good electrical switchability at low operating voltage (3 V) with a decent mobility of 4.37 cm2 V−1 s−1 and proven mechanical durability. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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