1. Raman evidence for the oxidation of amorphous As2(SexS1–x)3 film surfaces under visible light
- Author
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Yuriy Azhniuk, Vasyl Lopushansky, Vasyl Loya, Dmytro Solonenko, Volodymyr Kryshenik, Ivan Voynarovych, Alexander V Gomonnai, and Dietrich R T Zahn
- Subjects
amorphous semiconductors ,atomic force microscopy ,Raman spectroscopy ,photochemical reactions ,oxidation ,Materials of engineering and construction. Mechanics of materials ,TA401-492 ,Chemical technology ,TP1-1185 - Abstract
Raman spectra of thermally evaporated As _2 Se _3 and Se-rich (above 50 at. %) ternary As–Se–S films measured at high (above 1 MW cm ^−2 ) excitation power density reveal new narrow peaks emerging during the measurements which are attributed to crystalline arsenolite As _2 O _3 . The latter is formed on the As–Se–S film surface due to thermal decomposition of the film and oxidation of arsenic in ambient air. Contrary to As _2 S _3 , for which the photoassisted oxidation of the film surface requires UV light, for narrower-gap As–Se–S films this effect occurs under illumination by visible light.
- Published
- 2024
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