• This is the report on overall analyses of Bi and Cu-based 9 DP compounds by replacing the A-site with Cs, Rb, and K atoms, and the X-site with I, Br, and Cl atoms in the A 2 BiCuX 6 structure. • The A-site cationic replacement has put not much impact on the E g as well as the DOS of all 9 compounds. But the Cu-3 d and X- p orbitals are the major contributors of VBM whereas Bi-6 p orbital is the major contributor of CBM. • From the optical properties study, it is confirmed that the most suitable candidate Cs 2 BiCuI 6 DP compound has a ε 2 ω of 8.98, α(ω) of 0.68 × 105 cm−1, n(ω) of 3.4, σ(ω) of 2.24 1/fs, R(ω) of 0.34 and loss function of 2.71, respectively in the visible spectrum. • A comparative study between inorganic Cs 2 BiCuI 6 based FTO/WS 2 /Cs 2 BiCuI 6 /MXene/Pt structured and hybrid organic–inorganic ion ((FA) 2 BiCuI 6) based FTO/WS 2 /(FA) 2 BiCuI 6 /MXene/Pt structured PV cell has been performed using SCAPS-1D software. The Cs 2 BiCuI 6 based one provides an optimum PCE of 30.11 % as compared to (FA) 2 BiCuI 6 based one (20.21 %). • For better optimization of the device parameters, the effect of variation in thickness, defect density, carrier mobility, temperature, R S , and R Sh of the device are performed. Thus, it has been achieved a maximum PCE of 31.25 %, FF of 82.71 %, V OC of 1.24 V and J SC of 30.40 mA/cm2 for absorber thickness of 600 nm, ETL thickness of 130 nm, HTL thickness of 300 nm, N t of 1013 cm−3 for absorber, ETL and HTL each, charge carrier mobility of 20 cm2V−1s−1, temperature of 300 K, R S of 0.5 Ω-cm2 and a R Sh of 106 Ω-cm2, respectively. Presently, the Bi-based 3D A 2 (BB′)X 6 double perovskites (DPs) show an excellent photovoltaic (PV) performance with ambient stability compared to Pb-based counterparts. The structural, electronic, and optical properties analyses of A 2 BiCuX 6 (A=Cs, Rb, K, X=I, Br, Cl) DPs are performed by CASTEP software, and the Cs 2 BiCuI 6 is found to be the best suitable absorber among all of them. The density of states calculation reveals that Cu-3 d and X- p orbitals are the major contributors to valence band maxima (VBM), whereas Bi-6 p orbitals are responsible for the contribution to conduction band minima (CBM). Using SCAPS-1D simulation tool, the impact of variation in thickness, defect density, mobility of charge carriers, series resistance (R S), shunt resistance (R Sh), and device temperature on PV performance of the device has been analysed. The optimised all inorganic FTO/WS 2 /Cs 2 BiCuI 6 /MXene/Pt structured device has provided an excellent PV performance i.e., PCE of 31.25 %, FF of 82.71 %, V OC of 1.24 V, and J SC of 30.40 mA/cm2 using 2D structured ETL (WS 2) and HTL (MXene). This analysis provides an advanced understanding of cheap, environmentally stable, easily obtainable Bi-Cu based DP counterparts, which can be used in the fabrication of PV cells practically. [ABSTRACT FROM AUTHOR]