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Ultra-dense (>4,000 pixels per inch) and highly stable full-color III-nitride nanoscale pixels are crucial for near-eye display technologies like virtual and augmented-reality glasses. In this context, InGaN-based long wavelength green microscale light-emitting diodes face major bottlenecks, such as low efficiency and inadequate wavelength stability. These challenges are associated with the presence of both nonradiative surface defects and the strain induced quantum-confined Stark effect. Herein, we report nanoscale pixelation of green InGaN/GaN LEDs incorporating strain-engineered ultra-dense nanowire (NW) arrays, corresponding to ∼36,000 pixels per inch. The NW pixel arrays exhibit a stable peak wavelength emission at ∼500 nm for over 3 orders of magnitude of injection current densities (from ∼4 A/cm 2 to ∼1 kA/cm 2 ). The observed wavelength stability enhancement (a reduced blue-shift of just ∼4 nm) directly results from the suppressed built-in electric field achieved by strain relaxation of the axial multi quantum wells in the NWs. Finite difference time domain simulations show that emission of the pixel array is significantly increased owing to the enhanced spontaneous emission rate (characterized by a high Purcell factor of ≈2) of the ultra-dense NWs. We have demonstrated top-down NWs, where each NW (diameter ranging down to 200 nm) shows excellent uniformity and light output characteristics in direct contrast to bottom-up grown NW heterostructures. The results of this study establish a viable route for realizing nanoscale pixels with high luminescence stability and wafer-scale uniformity with high (>20%) indium composition InGaN/GaN LED heterostructures, for next-generation near-eye displays.