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We have fabricated the ZnFe2O4/ZnO (ZFO/ZnO) heterostructure on a silicon substrate by pulsed laser deposition technique and studied the magnetization switching by the electric field in the ZFO/ZnO heterostructure using an indigenously developed optical cantilever beam magnetometer setup. The magnetization (M) vs electric field (E) curve reveals that the magnetization of the ZFO film has been switched by an electric field applied along the thickness of the ZnO film. The saturation magnetization is found to be 28.77 MA/m from the M–E curve. The emergence of electric field-driven magnetization switching in the ZFO/ZnO heterostructure is attributed to the strain-mediated magnetoelectric coupling between the electric polarization of the ZnO film and the magnetization of the ZFO film as evidenced by the butterfly-type hysteresis behavior of magnetization with the applied electric field. However, the realization of electric field-controlled magnetization switching in the ZFO/ZnO heterostructure is regarded as a potential aspect for the fabrication of energy-efficient spintronic devices such as magnetoelectric random access memory cells, highly sensitive magnetic field sensors, magneto-logic devices, and neuromorphic devices. [ABSTRACT FROM AUTHOR]