Search

Combining theory and computation, we explore the Goos–Hänchen (GH) effect for electrons in a single-layered semiconductor microstructure (SLSM) modulated by Dresselhaus spin–orbit coupling (SOC). GH displacement depends on electron spins thanks to Dresselhaus SOC, therefore electron spins can be separated from the space domain and spin-polarized electrons in semiconductors can be realized. Both the magnitude and sign of the spin polarization ratio change with the electron energy, in-plane wave vector, strain engineering and semiconductor layer thickness. The spin polarization ratio approaches a maximum at resonance; however, no electron-spin polarization occurs in the SLSM for a zero in-plane wave vector. More importantly, the spin polarization ratio can be manipulated by strain engineering or semiconductor layer thickness, giving rise to a controllable spatial electron-spin splitter in the field of semiconductor spintronics. [ABSTRACT FROM AUTHOR]

The primary goal of this paper is to study a few advantages of bulk nanoparticles of Cu-doped SnO2 using the solid-state reaction method. Many innovative methods were employed to evaluate the special tuning of the bandgap and other structural and morphological properties of the material. X-ray diffractometer (XRD) confirmed that tin oxide has a rutile-type tetragonal-shaped structure with space group P42 / mnm. The average crystallite size was calculated which was found to increase from 53 to 80 nm by increasing the Cu-doping from x = 0 to x = 0.30. SEM images specified that nanoparticles are inhomogeneous and densely close to each other and the average particle size was found to be in the range of ~225–430 nm. Transmission electron microscopy (TEM) images showed the grains present in a few cubic and spherical shapes and grain size was increased (~20–90 nm) with doping of copper in the SnO2 lattice. UV–Vis spectroscopy showed that the band gap increased from 3.531 to 3.701 eV for pure SnO2 and Cu-doped SnO2, respectively. XPS identified the electronic state of Sn as well as Cu atoms as 4 + and 2 + , respectively. Raman spectroscopy showed that only three vibrational modes, i.e., A1g, B2g and doubly degenerate Eg, exist in a sample. [ABSTRACT FROM AUTHOR]

The primary goal of this paper is to study a few advantages of bulk nanoparticles of Cu-doped SnO2 using the solid-state reaction method. Many innovative methods were employed to evaluate the special tuning of the bandgap and other structural and morphological properties of the material. X-ray diffractometer (XRD) confirmed that tin oxide has a rutile-type tetragonal-shaped structure with space group P42 / mnm. The average crystallite size was calculated which was found to increase from 53 to 80 nm by increasing the Cu-doping from x = 0 to x = 0.30. SEM images specified that nanoparticles are inhomogeneous and densely close to each other and the average particle size was found to be in the range of ~225–430 nm. Transmission electron microscopy (TEM) images showed the grains present in a few cubic and spherical shapes and grain size was increased (~20–90 nm) with doping of copper in the SnO2 lattice. UV–Vis spectroscopy showed that the band gap increased from 3.531 to 3.701 eV for pure SnO2 and Cu-doped SnO2, respectively. XPS identified the electronic state of Sn as well as Cu atoms as 4 + and 2 + , respectively. Raman spectroscopy showed that only three vibrational modes, i.e., A1g, B2g and doubly degenerate Eg, exist in a sample. [ABSTRACT FROM AUTHOR]