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In this paper, the thermo-electric, phonon, electronic, and optical properties of the C3N monolayer have been investigated using the Wien2K computational code based on first principles calculations in the framework of the density functional theory. The study of electronic properties shows the behavior of non-magnetic semiconductors with an indirect gap with a value of 0.5 electron volts for this two-dimensional structure. Also, optical properties such as dielectric function, reflection, energy loss function, absorption coefficient, and optical conductivity are calculated. C3N monolayer is optically anisotropic in z and x direction, which according to the refractive index diagram leads to birefringence, which is a key parameter for this compound's linear optical performance. The results provide a fundamental understanding of the design of composite structures used in nanodevices based on two-dimensional advanced materials. The linear response approach along the symmetric points calculates the phonon dispersion diagram. The results indicate the absence of negative modes in the phonon spectrum, indicating that the structure is dynamically stable. Investigating the thermoelectric properties of the C3N monolayer using the semi-classical Boltzmann theory shows that this monolayer has a value coefficient (ZT) close to one at room temperature and temperatures lower than room temperature. As a result, it can be proposed as a candidate for thermoelectric applications.

In this study, the optical and electronic properties of bulk and nano-layer of zinc selenide (ZnSe) and zinc sulfide (ZnS) are investigated. The calculations for solving the many-body Schrodinger equations are performed in the framework of density functional theory using the WIEN2K computational package. The Engel-Vosko and gradient generalized approximation (GGA) treat the exchange-correlation potential. To investigate the electronic and optical properties of zinc selenide and zinc sulfide nano layers, the electronic band structure and the real and imaginary parts of complex dielectric function for the bulk and nano-layer with different thicknesses are calculated and compared. The results of electronic band structures show that the energy band gap of zinc selenide and zinc sulfide nano-layers with various thicknesses decreases to zero and are metal. In contrast, the bulk of zinc selenide and zinc sulfide compounds are semiconductors. The results also show that for each compounds the static dielectric function for the perpendicular and parallel direction to the nano-layer surface is different from the bulk static dielectric function. Comparison between the real parts of complex dielectric function for the bulk and nano-layer shows that absorption of electromagnetic radiation for the ZnSe and ZnS nano-layer in comparison to corresponding bulk results occur in lower energies.

In this paper, the geometric configuration, electronic properties, and optical characteristics of an InS/GaTe heterojunction have been computed using the foundational principles of density functional theory. The analysis indicates that when the interlayer distance is 3.88 Å, the binding energy is the most negative, indicating that the structure is the most stable. The bandgap of the two monolayers is larger than that of the heterojunction, which makes the photogenerated electrons of the heterojunction more easily excited. The InS/GaTe heterojunction is a type-II heterojunction that enhances the efficient dissociation of electron–hole pairs. In addition, the InS/GaTe heterojunction demonstrates strong absorption of ultraviolet light, rendering it suitable for applications in ultraviolet detectors and related fields. Furthermore, the bandgap electron transfer direction of the InS/GaTe heterojunction can be controlled by applying electrical force and mechanical pressure. The optical absorption coefficient of the InS/GaTe heterojunction can be adjusted to modify its optical properties. Finally, the possible future applications of the InS/GaTe heterojunction are discussed. [ABSTRACT FROM AUTHOR]

Context and results : In this paper, the crystal structure, electronic, optical, and mechanical properties of SrVO3 have been systematically studied by first-principles calculation. The results show that the calculated lattice parameters are in good agreement with the experimental values of X-ray diffraction. The density of states is described in detail in this paper. By analyzing the crystal structure and electronic properties of SrVO3, the magnetic properties of SrVO3 are obtained from the one unpaired electrons of V and the exchange interaction between two V ions. At the same time, a detailed analysis of the optical properties of SrVO3 was conducted, and it was found that it is transparent in the visible light range. Finally, the mechanical properties of SrVO3 are calculated, which can provide some references for future research. Computational method: In this paper, a first-principles method based on density functional theory (DFT) is reported for PBE-GGA analysis using the plane wave-pseudo potential method in a quantum concentrate packet, U value of 7 eV to V-d and a U value of 2 eV to O-p, Grimme correction by DFT-D method. The k points in the Brillouin region are set to 4 × 4 × 4. The energy convergence criterion for self-consistent field calculation is set at 5.0 × 10−6 eV/atom, and the cutoff energy is 1170 eV. In this paper, the force acting on each atom is not more than 0.01 eV/Å, the maximum stress is not more than 0.02GPa, and the maximum atomic displacement is 5 × 10−4 Å. [ABSTRACT FROM AUTHOR]

Context and results : In this paper, the crystal structure, electronic, optical, and mechanical properties of SrVO3 have been systematically studied by first-principles calculation. The results show that the calculated lattice parameters are in good agreement with the experimental values of X-ray diffraction. The density of states is described in detail in this paper. By analyzing the crystal structure and electronic properties of SrVO3, the magnetic properties of SrVO3 are obtained from the one unpaired electrons of V and the exchange interaction between two V ions. At the same time, a detailed analysis of the optical properties of SrVO3 was conducted, and it was found that it is transparent in the visible light range. Finally, the mechanical properties of SrVO3 are calculated, which can provide some references for future research. Computational method: In this paper, a first-principles method based on density functional theory (DFT) is reported for PBE-GGA analysis using the plane wave-pseudo potential method in a quantum concentrate packet, U value of 7 eV to V-d and a U value of 2 eV to O-p, Grimme correction by DFT-D method. The k points in the Brillouin region are set to 4 × 4 × 4. The energy convergence criterion for self-consistent field calculation is set at 5.0 × 10−6 eV/atom, and the cutoff energy is 1170 eV. In this paper, the force acting on each atom is not more than 0.01 eV/Å, the maximum stress is not more than 0.02GPa, and the maximum atomic displacement is 5 × 10−4 Å. [ABSTRACT FROM AUTHOR]

Inbuilt high energy band gap and resistivity cause harm to the intrinsic molybdenum trioxide (MoO3) for utilizing it directly in gas sensing and optoelectronic devices. Doping with transition metal ions can be an optimistic solution to these problems. By doping four side of modification of a material is possible. At first, doping can curtail the width of the energy band of semiconductor materials, thereby largely boosting the photo-sensitivity of the material and intensifying the light consumption that is more suitable for anti-laser devices and light source substances. The second is that doping can widen the material's band gap, which can significantly reduce the purities of the substance, improve absorbance, and make it suitable for strong interference semiconductor films and aperture materials. Third, changing the material's charge carrier density and effective mass can significantly improve conductivity. This is mostly relevant for conductive devices and photosensitive materials. Finally, changing the material's valance electron location influences the magnetic moment created by the spin of elementary particles in the entire system, allowing the magnetic characteristics of the substance to be regulated, which is especially useful for diluted magnetic semiconductor (DMS) materials. The investigation report of the structural, electrical, and optical characteristics of Cobalt (Co)-doped orthorhombic-phase MoO3 utilizing plane-wave pseudo-potential technique based on first-principles computation is presented in this paper. The computation has been executed using density a functional theory (DFT)-based CASTEP computer program with the generalized gradient approximation (GGA) together with the Perdue-Burke-Ernzerhof (PBE) exchange–correlation function. Acquired structural parameters present good consistency with the former reported experimental data. The resultant electronic band structure reveals that pure MoO3 shows an indirect energy band gap of 1.873 eV/2.312 eV whereas Co doping causes band narrowing of about 0.94 eV/1.36 eV with PBE/HSE techniques. The total and partial density of states (PDOS) have been studied comparatively, for pure and Co-doped MoO3, respectively. The absorption coefficient, loss function, reflectivity, refractive index, extinction coefficient, dielectric function, along with optical conductivity have also been determined to analyze the optical properties of Co-doped MoO3. Co-doped MoO3 offers higher conductivity while decreasing resistivity, compared to the undoped case. The present study ensures that Co-doped α- MoO3 can be competently employed as a functional material in gas sensing and optoelectronic devices. [ABSTRACT FROM AUTHOR]

Context: In this paper, the optimum coverage of 4.44% and the optimum adsorption sites were determined for the Be3N2 adsorption system of O atoms at different coverages based on density functional theory. The electronic and optical properties of the model were investigated by applying bending deformation to the model at these coverage and adsorption sites. Adsorption of O atoms disrupts the geometrical symmetry of Be3N2, resulting in orbital rehybridization and lowering its band gap. Bending deformation causes the band gap of the adsorbed O atom structure of Be3N2 to first increase and then decrease, resulting in the modulation of its band gap. With increasing bending deformation, the adsorbed system is redshifts, and the degree of redshift increases with increasing bending deformation. Methods: All calculations in this paper were performed using the first-principles-based CASTEP module of Materials Studio (MS). The generalized gradient approximation (GGA) plane-wave pseudopotential method and the Perdew-Burke-Ernzerhof (PBE) Perdew et al. Phys Rev Lett 77:3865, 1996 generalized functional were used in the geometry optimization and calculation process to calculate the exchange–correlation potential between electrons. The effect of coverage on the electronic and optical properties of the Be3N2-adsorbed O atom system was investigated by adsorbing different numbers of O atoms on a monolayer of Be3N2. The Be3N2 protocell contains two N atoms and three Be atoms with a space community of P6/MMM (No.191). The original cell was expanded 3 times along the direction of the base vectors a and b in the Be3N2 plane to create a 3 × 3 × 1 monolayer Be3N2 supercell system. A vacuum layer of 15 Å is set in the direction of the crystal plane of the vertical monolayer Be3N2 supercell to eliminate interactions between adjacent layers. In the overall energy convergence test of the Be3N2 supercell, the plane wave truncation energy was set to 500 eV, and the energy difference between the calculations given in the literature Reyes-Serrato et al. J Phys Chem Solids 59:743-6, 1998 using 550 eV was less than 0.01 eV, verifying the reliability of the data at a truncation energy of 500 eV. The Monkhorst–Pack special k-point sampling method Monkhorst et al. Phys Rev B 13:5188, 1976 was used in the structural calculations, and the grid was set to 3 × 3 × 1. The geometric optimization parameters are set as follows: the self-consistent field iteration convergence criterion is 2.0 × 10−6 eV, and the iterative accuracy convergence value is not less than 1.0 × 10−5 eV/atom for the total force of each atom and less than 0.03 eV/Å for all atomic forces. In addition the high-symmetry k-point path is taken as Γ(0,0,0) → M(0,0.5,0) → K(− 1/3,2/3,0) → Γ(0,0,0) Chen et al, AIP Adv 8:105105, 2018. [ABSTRACT FROM AUTHOR]

Context: In this paper, the optimum coverage of 4.44% and the optimum adsorption sites were determined for the Be3N2 adsorption system of O atoms at different coverages based on density functional theory. The electronic and optical properties of the model were investigated by applying bending deformation to the model at these coverage and adsorption sites. Adsorption of O atoms disrupts the geometrical symmetry of Be3N2, resulting in orbital rehybridization and lowering its band gap. Bending deformation causes the band gap of the adsorbed O atom structure of Be3N2 to first increase and then decrease, resulting in the modulation of its band gap. With increasing bending deformation, the adsorbed system is redshifts, and the degree of redshift increases with increasing bending deformation. Methods: All calculations in this paper were performed using the first-principles-based CASTEP module of Materials Studio (MS). The generalized gradient approximation (GGA) plane-wave pseudopotential method and the Perdew-Burke-Ernzerhof (PBE) Perdew et al. Phys Rev Lett 77:3865, 1996 generalized functional were used in the geometry optimization and calculation process to calculate the exchange–correlation potential between electrons. The effect of coverage on the electronic and optical properties of the Be3N2-adsorbed O atom system was investigated by adsorbing different numbers of O atoms on a monolayer of Be3N2. The Be3N2 protocell contains two N atoms and three Be atoms with a space community of P6/MMM (No.191). The original cell was expanded 3 times along the direction of the base vectors a and b in the Be3N2 plane to create a 3 × 3 × 1 monolayer Be3N2 supercell system. A vacuum layer of 15 Å is set in the direction of the crystal plane of the vertical monolayer Be3N2 supercell to eliminate interactions between adjacent layers. In the overall energy convergence test of the Be3N2 supercell, the plane wave truncation energy was set to 500 eV, and the energy difference between the calculations given in the literature Reyes-Serrato et al. J Phys Chem Solids 59:743-6, 1998 using 550 eV was less than 0.01 eV, verifying the reliability of the data at a truncation energy of 500 eV. The Monkhorst–Pack special k-point sampling method Monkhorst et al. Phys Rev B 13:5188, 1976 was used in the structural calculations, and the grid was set to 3 × 3 × 1. The geometric optimization parameters are set as follows: the self-consistent field iteration convergence criterion is 2.0 × 10−6 eV, and the iterative accuracy convergence value is not less than 1.0 × 10−5 eV/atom for the total force of each atom and less than 0.03 eV/Å for all atomic forces. In addition the high-symmetry k-point path is taken as Γ(0,0,0) → M(0,0.5,0) → K(− 1/3,2/3,0) → Γ(0,0,0) Chen et al, AIP Adv 8:105105, 2018. [ABSTRACT FROM AUTHOR]

In this paper, based on the first-principle calculations of hybrid density functional theory, the MoSTe/g-GeC of the Z-scheme heterostructure is constructed. The stability, electronic properties, optical absorption properties, and photocatalytic mechanism of the heterostructure is investigated. The band structure of MoSTe/g-GeC heterostructure is staggered, and the bandgap is 0.47 eV. The built-in electric field from g-GeC to MoSTe, with a size of 1.03 eV. The optical absorption coefficient of MoSTe/g-GeC heterostructures is significantly higher than that of MoSTe and g-GeC layer. When pH ranges from 0 to 7, the reduction reaction occurs in g-GeC layer, and the oxidation reaction occurs in the MoSTe layer. In the MoSTe/g-GeC heterostructure under different stresses, the band structure is arranged in a staggered manner. Importantly, under tensile strain, the bandgap of MoSTe/g-GeC heterostructure can be changed from the indirect into a direct bandgap. The bandgap of heterostructure decreases under the strain. In addition, the analysis of the photocatalytic mechanism shows that the redox reaction of the MoSTe/g-GeC heterostructure occurs on the layer with strong redox ability, and their light absorption ability is significantly enhanced compared to single-layers, which effectively improves the photocatalytic properties. It's a potential high-efficiency photocatalytic materials for direct Z-scheme heterostructure. In this paper, the stability, electronic properties, optical absorption properties, and photocatalytic mechanism of the MoSTe/g-GeC heterostructure is systematically studied. The results show that the heterostructure is a direct z-scheme heterostructure, and the photocatalytic performance is better than that of MoSTe and GeC monolayers. [Display omitted] • MoSTe/g-GeC heterostructure is a direct Z-scheme heterostructure, which is suitable for photocatalytic water splitting. • MoSTe/g-GeC heterostructure has excellent absorption coefficient (9.8 × 104 cm−1) in the visible and ultraviolet ranges. • The bandgap of MoSTe/g-GeC heterostructure can change from indirect bandgap to direct bandgap under partial strain. [ABSTRACT FROM AUTHOR]

We have simulated the effect of changing the end groups in BTP core with five organic units of 1,3-Indandione (IN), 2-thioxothiazolidin-4-one (Rhodanine), propanedinitrile (Malononitrile), (2-(6-oxo-5,6-dihydro-4H-cyclopenta[c]thiophen-4-ylidene)malononitrile) (CPTCN) and 2-(3-oxo-2,3-dihydroinden-1-ylidene (IC), and two halogenated units of (4F) IC and (4Cl) IC on the optical and photovoltaic properties of the BTP DA'D core molecular unit. Thus modified, seven molecular structures are considered and their optical properties, including HOMO and LUMO energies and absorption spectra are simulated in this paper. On the basis of HOMO and LUMO energies, it is found that two of the seven molecules, BTP-IN and BTP-Rhodanine, can act as donors and the other four, BTP-(4F) IC, BTP-(4Cl) IC, BTP-CPTCN and BTP-IC, as acceptors in designing bulk heterojunction (BHJ) organic solar cells (OSCs). Using these combinations of donors and acceptors in the active layer, eight BHJ OSCs, such as BTP-IN: BTP-(4F) IC, BTP-IN: BTP-(4Cl) IC, BTP-IN: BTP-CPTCN, BTP-IN: BTP-IC, BTP-Rhodanine: BTP-(4F) IC, BTP-Rhodanine: BTP-(4Cl) IC, BTP-Rhodanine: BTP-CPTCN and BTP-Rhodanine: BTP-IC, are designed, and their photovoltaic performance is simulated. The photovoltaic parameters J s c , V o c and FF for all eight BHJ OSCs and their power conversion efficiency (PCE) are simulated. It is found that the BHJ OSC of the BTP-IN: BTP-CPTCN donor–acceptor blend gives the highest PCE (14.73%) and that of BTP-Rhodanine: BTP-(4F) IC gives the lowest PCE (12.07%). These results offer promising prospects for the fabrication of high-efficiency BHJ OSCs with the blend of both donor and acceptor based on the same core structure. [ABSTRACT FROM AUTHOR]

In this paper, we have performed a study on the optical properties of single crystals ZnGa2S4 by method of density functional theory (DFT) and ellipsometry measurements. The calculated results for the real ε r and imaginary ε i parts of the dielectric function are compared with the measured experimental spectroscopic ellipsometry (SE) spectra in the 0.7–6.5 eV spectral region. Absorption coefficient-photon energy dependency revealed the existence of direct bandgap transitions with energy 3.5 eV. This result is very close to bandgap obtained from our theoretical calculation. [ABSTRACT FROM AUTHOR]

Due to their high anisotropic behavior, liquid crystals possess strong nonlinear optical properties. The RM734 liquid crystal is famous for having high anisotropic behaviors compared to traditional liquid crystals. The present work focused on the evaluation of electronic, charge-transport, nonlinear optical, electro-optical, and thermochemical properties of the RM734 liquid crystal. Furthermore, the effect of halogenation on the above properties of RM734 was investigated and is discussed in depth as halogen substitution on the liquid crystal molecule can alter the quantum mechanical properties of any liquid crystal molecule. Density functional theory combined with B3LYP and dispersion correction were used to calculate the properties of RM734. The 6-311G** basis set was used for the estimation of these properties, whereas def2-TZVPD was used to evaluate the nonlinear optical parameters. Due to the halogenation of RM734, its electronic properties vary significantly. By halogenation, a better electron-transport molecule can be converted into a hole-transport molecule. The electro-optical properties were calculated with the application of an external electric field for all molecules. With the help of the order parameter, the nematic phase was observed for all reported molecules. The variation in the birefringence with respect to the external electric field was investigated and discussed in detail. Therefore, the present study reveals the significant impact of halogenation in terms of the nonlinear optical and thermochemical properties of RM734. [ABSTRACT FROM AUTHOR]

A theoretical study of the reported photocatalytic systems based on Zr-based MOF (UiO-67) with biphenyl-4,4′-dicarboxylic acid (bpdc) and 2,2′-bipyridine-5,5′-dicarboxylic acid (bpydc) as linkers was performed. Quantum chemical calculations were carried out to understand the optical properties of the materials and to facilitate the rational design of new UiO-67 derivatives with potentially improved features as photocatalysts under ambient conditions. Hence, the effect of the structural modifications on the optical properties was studied considering different designs based on the nature of the linkers: in 1 only the bpdc linker was considered, or the mixture 1 : 1 between bpdc and bpydc linkers (labeled as 1A). Also, substituents R, –NH2, and –SH, were included in the 1A MOF only over the bpdc linker (labeled as 1A-bpdc-R) and on both bpdc and bpydc linkers (labeled as 1A-R). Thus a family of six isoreticular UiO-67 derivatives was theoretically characterized using Density Functional Theory (DFT) calculations on the ground singlet (S0) and first excited states (singlet and triplet) using Time-Dependent Density Functional Theory (TD-DFT), multiconfigurational post-Hartree–Fock method via Complete Active Space Self-Consistent Field (CASSCF). In addition, the use of periodic DFT calculations suggest that the energy transfer (ET) channel between bpdc and bpydc linkers might generate more luminescence quenching of 1A when compare to 1. Besides, the results suggest that the 1A-R (R: –SH and NH2) can be used under ambient conditions; however, the ET exhibited by 1A, cannot take place in the same magnitude in these systems. These ET can favor the photocatalytic reduction of a potential metal ion, that can coordinate with the bpydc ligand, via LMCT transition. Consequently, the MOF might be photocatalytically active against molecules of interest (such as H2, N2, CO2, among others) with photo-reduced metal ions. These theoretical results serve as a useful tool to guide experimental efforts in the design of new photocatalytic MOF-based systems. [ABSTRACT FROM AUTHOR]

Context: The electronic properties and optical properties of Cr-doped monolayer WS2 under uniaxial compressive deformation have been investigated based on density functional theory. In terms of electronic structure properties, both intrinsic and doped system bandgaps decrease with the increase of compression deformation, and the values of the bandgap under the same compression deformation after Cr doping are reduced compared with the corresponding intrinsic states. When the compressive deformation reaches 10%, both the intrinsic and doped system band gaps are close to zero. New electronic states and impurity energy levels appear in the WS2 system when doped with Cr atoms. For the optical properties, the calculation and analysis of the dielectric function under each deformation regime of monolayer WS2 show that the compression deformation affects the dielectric function, and when the compression deformation is 10%, the un-doped and Cr-doped regimes show a decrease in ε1(ω) compared to the compression deformation of 8%. For each deformation system, the peak reflections occur in the ultraviolet region. Near the position where the second peak of the absorption spectrum appears, it can be seen that the ability of each system to absorb light gradually decreases with the increase of the amount of deformation and appears to be red-shifted to varying degrees. Methods: This study follows the initial principles of the density functional theory framework and is based on the CASTEP module of Materials-Studio software GGA and PBE generalizations are used to perform computations such as geometry optimization of the model. We have calculated the energy band structure of monolayer WS2 with intrinsic and compressive deformations of 2% and 4% using PBE and HSE06, respectively. The band gap values calculated using PBE are 1.802 eV, 1.663 eV, and 1.353 eV, respectively, and the band gap values calculated with HSE06 are 2.267 eV, 2.034 eV, 1.751 eV. The results show that the bandgap values calculated by HSE06 are significantly higher than those calculated by PBE, but the bandgap variations calculated by the two methods have the same trend, and the shape characteristics of the energy band structure are also the same. However, it is worth noting that the computation time required for the HSE06 calculation is much longer than that of the PBE, which is far beyond the capability of our computer hardware, and the purpose of this paper is to investigate the change rule of the effect of deformation on the bandgap value, so to save the computational resources, the next calculations are all calculated using the PBE. The Monkhorst–Pack special K-point sampling method is used in the calculations. The cutoff energy for the plane wave expansion is 400 eV, and the K-point grid is assumed to be 5 × 5 × 1. Following geometric optimization, the iterative precision converges to a value of less than 0.03 eV/Å for all atomic forces and at least 1 × 10−5 eV/atom for the total energy of each atom. The vacuum layer's thickness was selected at 20 Å to mitigate the impact of the interlayer contact force. [ABSTRACT FROM AUTHOR]

Context: The electronic properties and optical properties of Cr-doped monolayer WS2 under uniaxial compressive deformation have been investigated based on density functional theory. In terms of electronic structure properties, both intrinsic and doped system bandgaps decrease with the increase of compression deformation, and the values of the bandgap under the same compression deformation after Cr doping are reduced compared with the corresponding intrinsic states. When the compressive deformation reaches 10%, both the intrinsic and doped system band gaps are close to zero. New electronic states and impurity energy levels appear in the WS2 system when doped with Cr atoms. For the optical properties, the calculation and analysis of the dielectric function under each deformation regime of monolayer WS2 show that the compression deformation affects the dielectric function, and when the compression deformation is 10%, the un-doped and Cr-doped regimes show a decrease in ε1(ω) compared to the compression deformation of 8%. For each deformation system, the peak reflections occur in the ultraviolet region. Near the position where the second peak of the absorption spectrum appears, it can be seen that the ability of each system to absorb light gradually decreases with the increase of the amount of deformation and appears to be red-shifted to varying degrees. Methods: This study follows the initial principles of the density functional theory framework and is based on the CASTEP module of Materials-Studio software GGA and PBE generalizations are used to perform computations such as geometry optimization of the model. We have calculated the energy band structure of monolayer WS2 with intrinsic and compressive deformations of 2% and 4% using PBE and HSE06, respectively. The band gap values calculated using PBE are 1.802 eV, 1.663 eV, and 1.353 eV, respectively, and the band gap values calculated with HSE06 are 2.267 eV, 2.034 eV, 1.751 eV. The results show that the bandgap values calculated by HSE06 are significantly higher than those calculated by PBE, but the bandgap variations calculated by the two methods have the same trend, and the shape characteristics of the energy band structure are also the same. However, it is worth noting that the computation time required for the HSE06 calculation is much longer than that of the PBE, which is far beyond the capability of our computer hardware, and the purpose of this paper is to investigate the change rule of the effect of deformation on the bandgap value, so to save the computational resources, the next calculations are all calculated using the PBE. The Monkhorst–Pack special K-point sampling method is used in the calculations. The cutoff energy for the plane wave expansion is 400 eV, and the K-point grid is assumed to be 5 × 5 × 1. Following geometric optimization, the iterative precision converges to a value of less than 0.03 eV/Å for all atomic forces and at least 1 × 10−5 eV/atom for the total energy of each atom. The vacuum layer's thickness was selected at 20 Å to mitigate the impact of the interlayer contact force. [ABSTRACT FROM AUTHOR]

Cyclo[18]carbon has received considerable attention thanks to its novel geometric configuration and special electronic structure. Superalkalis have low ionization energy. Doping a superalkali in cyclo[18]carbon is an effective method to improve the optical properties of the system because considerable electron transfer occurs. In this paper, the geometry, bonding properties, electronic structure, absorption spectrum, and nonlinear optical (NLO) properties of superalkaline M 3O (M = Li, Na)-doped cyclo[18]carbon were studied by using density functional theory. M 3O and the C18 rings are not coplanar. The C18 ring still exhibits alternating long and short bonds. The charge transfer between M 3O and C18 forms stable [ M 3O]+[C18]− ionic complexes. C18 M 3O (M = Li, Na) shows striking optical nonlinearity, i.e., their first- and second-order hyperpolarizability (β vec and γ ||) increase considerably at λ = 1907 nm and 1460 nm. [ABSTRACT FROM AUTHOR]

Fluoroperovskites, a subgroup of perovskite materials, have gained substantial scientific interest due to their outstanding optoelectronic properties and potential applications in electronic devices, such as solar cells, LEDs, and transistors. These unique properties originate from the crystal structure, enabling adaptable bandgap engineering. This paper investigates the structural, elastic, electronic, and optical properties of LiXF3 (X = Cd, Hg) using Density Functional Theory in WIEN2K. The stable cubic nature of LiCdF3 and LiHgF3 with lattice constants of 4.396 Å and 4.560 Å, respectively, is revealed. Elastic property analysis confirms mechanical equilibrium and ductility, while band structure calculations indicate indirect band gaps of 2.64 eV and 3.38 eV for LiCdF3 and LiHgF3, respectively, from (M − Γ). Optical properties within a 15 eV range are correlated with the electronic structure, providing a comprehensive understanding of Li-based fluoroperovskites' physical attributes. [ABSTRACT FROM AUTHOR]

In this paper, we have performed a study on the optical properties of single crystals ZnGa2S4 by method of density functional theory (DFT) and ellipsometry measurements. The calculated results for the real ε r and imaginary ε i parts of the dielectric function are compared with the measured experimental spectroscopic ellipsometry (SE) spectra in the 0.7–6.5 eV spectral region. Absorption coefficient-photon energy dependency revealed the existence of direct bandgap transitions with energy 3.5 eV. This result is very close to bandgap obtained from our theoretical calculation. [ABSTRACT FROM AUTHOR]

The Dirac cone in the single-layer graphene limits its application in electronic devices such as Schottky barrier diodes and field-effect transistors. Thus, we make the novel heterostructures based on graphene to solve this problem. The electronic and optical properties of pristine and Ag/Au/Cu-doped graphene/MoS 2 heterostructures are investigated by using the density functional theory. For the Ag/Au/Cu-doped MoS 2 monolayer, the results show that they are magnetic. Their bands across the Fermi level, which indicates these systems are metallic. For the Ag/Au/Cu-doped graphene/MoS 2 heterostructures, they are metallic and nonmagnetic. Especially in the Au-doped graphene/MoS 2 , the Dirac cone opens about 66 meV. It means that Au-doped graphene/MoS 2 has the potential to be a candidate material for high speed electronic devices. Compared with pristine heterostructure, the probability of electron transition in the low energy region is the enhanced in Ag/Au/Cu-doped systems. The optical absorption coefficient of doped heterostructure is enhanced in the range of 0–0.4 eV and 1.7–2.7 eV. This work indicates that these heterostructures have a certain potential in the application of nanodevices. [Display omitted] • This paper confirms that the graphene can adsorb on Ag/Au/Cu-doped MoS 2 monolayer stably. • This paper finds that the Dirac cone in the Au-doped graphene/MoS 2 heterostructure opens about 66 meV. • The introduction of Ag/Au/Cu atoms in graphene/MoS 2 heterostructure can make the electron transfer at low energy. • The optical absorption coefficient is improved in these doped heterostructures. [ABSTRACT FROM AUTHOR]

With the development of industrialization, the use of mercury in industry has become more and more widespread, causing serious impacts on the environment. It is therefore urgent to find new effective ways to combat mercury pollution. In this paper, The effect of C, O, P, Ni and Au doping on the adsorption of Hg atoms by WS 2 has been investigated based on the first nature principle of density functional theory. The electronic structures and optical properties of the adsorbed systems were calculated after atomic doping. The results show that the absolute value of the adsorption energy of the intrinsic adsorption system is small and does not favour the adsorption of Hg on WS 2. However, after C, P, Ni and Au doping, the adsorption energy of the system is significantly increased and a strong charge transfer between WS 2 and Hg atoms occurs, as well as a significant change in the band gap of the structure. This suggests that atomic doping favors the adsorption of Hg by WS 2. The effect of O doping on the adsorption system is not significant. In addition, a study of the optical properties revealed that the static dielectric constants of the system appeared to increase to varying degrees after the doping of the atoms. The doping of P, Ni and Au atoms increases the light absorption coefficient and contributes to the photocatalytic efficiency of the structures. The doped atoms cause a red shift in the reflectivity peak of the adsorbed system. In summary, the doping of C, P, Ni and Au enhances the adsorption of Hg atoms on WS 2. O doping has less effect on the adsorption of Hg on WS 2. • In this paper, the effect of C, O, P, Ni and Au doping on the adsorption of Hg atoms by WS2 was investigated. • The results show that atomic doping favors the adsorption of Hg by WS2. • Atomic doping alters the electronic properties of the structure. • Atomic doping alters the optical properties of the structure. [ABSTRACT FROM AUTHOR]

In this paper, we extensively explore the electronic, magnetic, and optical properties of CrS, a 3D bulk which cleaved into a 2D monolayer structure. Using density functional theory, we found that both configurations have half-metallic properties, where the spin-up is metallic while the spin-down channel is a semiconductor with a band gap of 3.77, and 3.09 eV in the 3D and 2D structures, respectively. These structures have (100 %) spin polarization of electrons near of Fermi level. However, the magnetic moments offer that both structures are ferromagnetic with a total magnetic moment of 4 μ B , calculated according to the Slater-Pauling rule total magnetic moment = valance electrons −8. The spin-down has a good band gap so we test the optical properties for 3D and 2D structures, a comprehensive examination of the alloy's optical properties was conducted within the energy range of 0–15 eV, encompassing the real and imaginary components of the dielectric function, as well as the absorption coefficient. [ABSTRACT FROM AUTHOR]

In this paper, we investigate the electronic, magnetic, and optical properties of scandium based ternary oxides perovskite YScO 3 (Y = Ni, Pd, Pt). We employ the Tran and Blaha modified Becke-Johnson approximation to calculate spin polarization using the density functional theory. Based on the formation energy, we found that our materials are thermodynamically stable (−0.76 eV, −1.3 eV and −1.65 eV for NiScO 3 , PdScO 3 and PtScO 3 , respectively). The densities of states and spin polarized band structures for spin up (↑) and spin down (↓) channels reveal the half-metallic nature for all studied compounds with Ni/Pd/Pt-d orbitals playing a major role in the valence band. Additionally, all perovskites exhibit ferromagnetic behavior with magnetic moments approximately equal to 3 μ B. Moreover, we calculate several optical parameters such as the dielectric constants, refractive index, reflectivity, extinction and absorption coefficients for these compounds. The results suggest that these perovskites might be promising candidates for optical and spintronic devices. • YScO3 (Y = Ni, Pd, and Pt) are thermodynamically stable. • Exhibits half-metallic ferromagnetism with 100% spin polarization. • The structural, electronic, magnetic, and optical properties were investigated using density functional theory. • Promising candidates for spintronic applications. [ABSTRACT FROM AUTHOR]

Rubidium cations (Rb+) significantly improve the overall performance of organic-inorganic hybrid perovskite based devices and have gained exceptional attention due to their good thermal and structural stability. In this paper, we have evaluated the physical attributes of rubidium based Rb 2 TlRhF 6 via DFT code using TB-mBJ potential. Structural stability has been confirmed through negative formation energy and calculated tolerance factor. Band structure and TDOS profile confirm semiconductor nature with 3.2 eV direct bandgap at (L-L) symmetry points. A ductile nature with metallic bonding is observed through the investigation of elastic attributes. Optical analysis of Rb 2 TlRhF 6 indicates great absorption in the UV region. Low thermal conductivity and electrical resistivity, along with a high value for power factor, resulted in high ZT value of 0.8 and 800 K. The combined qualities provide a stunning and exciting picture of this compound for use in thermoelectric advanced technologies. [ABSTRACT FROM AUTHOR]

Graphene nanoribbons (GNRs), categorized into zigzag and armchair types, hold significant promise in electronics due to their unique properties. In this study, optical properties of zigzag and armchair GNRs are investigated using density functional theory (DFT) in conjunction with Kubo–Greenwood formalism. Our findings reveal that optical characteristics of both GNR types can be extensively modulated through the application of a transverse electric field, e.g., the refractive index of the a zigzag GNR is shown to vary in the range of n = 0.3 and n = 9.9 for the transverse electric field values between 0 V/Å and 10 V/Å. Additionally, electrical transmission spectra and the electrical conductivities of the GNRs are studied using DFT combined with non-equilibrium Green's function formalism, again uncovering a strong dependence on the transverse electric field. For example, the conductance of the armchair GNR is shown to vary in the range of G = 6 μA/V and G = 201 μA/V by the transverse electric field. These results demonstrate the potential of GNRs for use in electronically controlled optoelectronic devices, promising a broad range of applications in advanced electronic systems. [ABSTRACT FROM AUTHOR]

Modifying electrical and optical properties in two-carbon materials is essential for electronic devices, energy storage and biosensor applications. We report a comparative study of the effect of systematically intercalated strontium atoms in AA- and AB-stacked bilayer graphene (BG) in the framework of density functional theory (DFT). The electronic band structures, the total and partial electronic density of states and the dielectric function are studied. We show that the intercalation of atoms can influence both electronic properties. Our results show that the Dirac cones, a signature of graphene, are translated into the conduction band. This property may be useful in band-gap tuning applications of nanodevices. The optical properties were calculated parallel and perpendicular to the graphene sheet under polarised electric fields. The calculated optical properties show that the intercalation of Sr in the AA- and AB-stacked BGs promotes IR absorption. The findings provide a basis for developing graphene intercalary compounds, which can be used in optoelectronics to control the absorption of light wavelengths and specifically in biosensor applications. [ABSTRACT FROM AUTHOR]

A new (C5H14N2)CoCl4 compound was synthesized by slow evaporation at room temperature. Asymmetric unit of this compound consists of one tetrahedral geometry [CoCl4]2- and one diprotonated organic cations. The structure consists of an alternation along the a-axis of organic-inorganic layers parallel to (a, b) plane. The inorganic layers built up of isolated tetrahedral [CoCl4]2-. Crystal packing is stabilized by electrostatic interactions and hydrogen bonds between cations and anions. Hirshfeld surface was conducted to investigate intermolecular interactions. Density Functional Theory (DFT) calculations of geometry optimization, vibrational frequencies, simulated UV-Visible spectrum, Frontier molecular orbitals analysis, nonlinear optical properties were made together with the experimental studies. Good agreement was found between theoretical and experimental results. In fact, the second hyperpolarizability value 〈γ〉 of compound (0.8665 × 10-36 esu) indicates that hydrogen bonds play an important role in the creation of crystal structure, its stability and in the enhancement of polarizability α and hyperpolarizability of crystal. Hence, the large 〈γ〉 value suggests that this compound is a Non-Linear Optical (NLO) material of interest and could be adopted in various optical applications. Energy gap indicates that our compound behaves as a semi-conductor material. In the other hand, the bioassay results showed that this structure exhibits significant antioxidant and antibacterial activities. [ABSTRACT FROM AUTHOR]

Purpose: The purpose of this study aims to synthesize a novel donor–acceptor dye based on phenothiazine as a donor (D) and nonconjugated spacer was devised and synthesized by condensing of 2,2'-(1H-indene-1,3(2H)-diylidene) dimalononitrile with aldehyde and the practical synthesis methodology as given in Scheme 1. Design/methodology/approach: The prepared phenothiazine dye was systematically experimentally and theoretically examined and characterized using nuclear magnetic resonance spectroscopy (1H,13C NMR), Fourier-transform infrared spectroscopy (IR) and high-resolution mass spectrometry. Density functional theory (DFT) and time-dependent density functional theory DT-DFT calculations were implemented to determine the electronic properties of the new dye Findings: The UV-Vis absorption and fluorescence spectroscopy of the synthesized dye was investigated in a variety of solvents with varying polarities to demonstrate positive solvatochromism correlated with intramolecular charge transfer (ICT). The probe's quantum yields (Фf) are experimentally measured in ethanol, and the Stokes shifts are found to be in the 4846–9430 cm−1 range. Originality/value: The findings depicted that the novel (D-π-A) chromophores may act as a significant factor in the organic optoelectronics. [ABSTRACT FROM AUTHOR]

A new type of copper cysteamine photosensitizer, Cu-Cy: Cu 3 Cl (SR) 2 (R = CH 2 CH 2 NH 2), was reported and later, there was another experimental report of Cu-Cy synthesis with other halogen elements (Cu-Cy-X, X = F, Br, and I), these later group of cysteamines contained Cl as an impurity. To realize the full potential applications of these cysteamines as photosensitizers, it is imperative to fundamentally understand the effect of Cl on the stability and optical properties of Cu-Cy-F/Br/I. In this paper, the stability of Cl-doped Cu-Cy-X (X = F, Br, and I) and their electronic and optical properties pertaining to their application as photosensitizers were investigated by using density functional theory (DFT). It was found that mixing Cu-Cy-Br and Cu-Cy-I with Cl increased their thermodynamic stability as well as made the materials mechanically harder. In addition, mixing halogens in Cu-Cy rendered a significant impact on their optical properties, namely the mixing affected Cu-Cy's deexcitation to their ground states during the photosensitizing process. In addition, it was found that after the initial photoexcitation within these Cu-cysteamines, the intersystem crossing can take place due to spin–orbit coupling from the Cu atoms. [Display omitted] • Mixing Cl with Br and I in Cu-Cy increases the thermodynamic stability of Cu-Cy. • Cl in Cu-Cy-X2 (X2 = F, Br, and I) makes the material mechanically hard. • Çu-Cy structures with higher contents of I are kinetically more stable. • Intersystem crossing occurs due to spin-orbit coupling. • Cu-Cy-X is initiated at a lower UV region comparing to mixed halogen Cu-Cy. [ABSTRACT FROM AUTHOR]

[Display omitted] • The results of this paper reveal the fact that the crystal XAlO 3 (X = Sm, Eu, Gd) is promising for energy-devices applications. • The hundred percent polarization due to their half metallic natures make candidate materials for spintronic devices. • These materials show best response to the ultraviolet-region which is clear for their dielectric functions, refractive index, absorption coefficient, extinction coefficient, optical conductivity, reflectivity, and energy loss function. • They also show outstanding thermoelectric properties. First-principles method based on density functional theory calculations are employed for investigating the electronic, optical and thermoelectric properties of XAlO 3 (X = Sm, Eu, Gd) for energy-devices applications. The spin-polarized electronic spectra of XAlO 3 depicts their half metallic nature since mere the spin up channel crosses the fermi level. Further, the optical features for instance; the dielectric functions, refractive index, absorption coefficient, extinction coefficient, optical conductivity, reflectivity, and energy loss function are studied which predict that these compounds are supposed to be better materials for the ultraviolet-region based optoelectronic and energy devices. Thermoelectric properties in terms of electrical and thermal conductivity, and figure of merit show higher values of thermoelectric characters which is extremely significant for optoelectronic devices. Interestingly, the positive value of Seebeck coefficient indirectly depict that XAlO 3 is a p-type materials. [ABSTRACT FROM AUTHOR]

Density Functional Theory is employed to investigate how specific rare earth (RE) dopants (Pr, Y, Dy) affect the electronic, magnetic, and optical characteristics of Co0.5Ni0.5Fe2O4 (CN) spinel ferrites. The impact of RE atoms, which replace Fe ions in the supercell, is elucidated by analyzing the spin-resolved density of states, magnetic moment, and optical parameters. The findings demonstrate that both single and collective RE doping play a vital role in manipulating the key properties of these materials. Notably, we reveal that incorporating RE dopants into CN structures leads to a reduction in the energy band gap. Additionally, this work underscores substantial spin-dependent behavior and provides valuable insights into optical properties, suggesting that RE-doped CNs hold significant potential in the fields of spintronics and optoelectronics. [ABSTRACT FROM AUTHOR]

We designed and synthesized 1,1′,3,3′-tetraaryl-4,4′-bibenzo[c]thiophene derivatives, 1,1′,3,3′-PhtBu-4,4′-BBT (BBT-PhtBu4), 1,1′,3,3′-PhCN-4,4′-BBT (BBT-PhCN4), and 1,1′-PhtBu-3,3′-PhCN-4,4′-BBT (BBT-PhtBu2PhCN2), which have four electron-donating tert-butylphenyl groups, four electron-withdrawing cyanophenyl groups, and two tert-butylphenyl groups and two cyanophenyl groups, respectively, on each thiophene ring by the Stille coupling reaction using 1,1′-diaryl-3,3′-distannyl-4,4′-BBT or 1,1′,3,3′-tetrastannyl-4,4′-BBT. It was found that the photoabsorption and fluorescence maximum wavelengths (λabsmax and λflmax) of BBT-PhtBu4, BBT-PhCN4, and BBT-PhtBu2PhCN2 appear in a longerwavelength region, in comparison with those of 1,1′-diaryl-4,4′-BBT derivatives BBT-PhtBu2 with a tert-butylphenyl group and BBT-PhCN2 with a cyanophenyl group on each thiophene ring. Moreover, the cyclic voltammetry (CV) curves of the 4,4′-BBT derivatives indicated that the introduction of the electron-donating tert-butylphenyl group and/or the electron-withdrawing cyanophenyl group into the benzo[c]thiophene skeleton leads to the lowering of the oxidation potential. In addition, an electron-donating phenyl substituent is more effective than an electron-withdrawing phenyl substituent in the lowering of the oxidation potential. Density functional theory (DFT) calculations as well as the experimental results revealed that increasing the number of electron-donating and electron-withdrawing phenyl groups on the thiophene ring results in the increase of the HOMO energy level and the lowering of the LUMO energy level, respectively, that leads to a decrease in the HOMO–LUMO band gap, that is, a bathochromic shift of the photoabsorption band. Thus, this work provides not only facile synthetic methods for 1,1′,3,3′-tetraaryl-4,4′-BBT derivatives with the same or different aryl substituents on the thiophene rings but also useful methods to precisely adjust their optical and electrochemical properties. [ABSTRACT FROM AUTHOR]

First principles calculations of the structural, electronic and optical properties of GaSb, InSb and their ternary Ga 1 - x In x Sb alloys (x = 0.25, 0.50 and 0.75) have been performed using the full-potential linear muffin-tin orbital (FP-LAPW) method within density functional theory (DFT). The generalized gradient approximation and modified Becke and Janson functional with local density approximation (mBJ–LDA) are utilized for the treatment of exchange and correlation potentials. The results show the calculated lattice constants increase linearity with increasing the In concentration. The electronic band structure indicates that these alloys are direct band gap semiconductors for all the values of x and the band gap decreases as x increases from x = 0 to x = 1. The results also show that the there is a non-linear dependence of the band gap on composition x in Ga 1 - x In x Sb alloys. Regarding optical properties, the real and imaginary parts of the dielectric function have been calculated. The results show that the static dielectric constant increases with increase in concentration of In, consistent with reduction in energy band gap. The onset point and major peaks in the imaginary parts of the dielectric function spectra are identified for the Ga 1 - x In x Sb alloys and shown that they are related to the corresponding band gap values. The results also show that for energy values higher than ≅ 4 eV, the electromagnetic wave transition through Ga 1 - x In x Sb alloys is nearly zero. [ABSTRACT FROM AUTHOR]

The structural, electronic, magnetic, and optical properties of Co-doped 10–20-atom silver clusters are investigated by GGA/PBE via the density functional theory. The Ag–Co clusters form core–shell structures with a Co atom in the center. Co atom doping modulates electronic properties like energy gap, molecular softness, global hardness, electronegativity, and electrophilicity index. For the optical spectra of the Ag–Co clusters, the energy of their spectra overall exhibits little change with increasing numbers of atoms; the strongest peaks are roughly distributed at 3.5 eV, and the intensity of their spectra overall is strengthened. Raman and vibrational spectra reflect structural changes with Co atom addition. The addition of the Co atom alters magnetic moments of specific Ag–Co clusters, while others remain unchanged. [ABSTRACT FROM AUTHOR]

Based on density functional theory (DFT), the structural and physical properties of NaCaZ (Z = N, P, As) half-Heusler (HH) semiconductor materials have been studied under pressure up to 20 GPa. The ground state results show that the NaCaZ are chemically stable in α -phase structure and exhibit semiconducting behavior with an indirect bandgap. The optical parameters like the real and imaginary components of complex dielectric function, the absorption coefficient and refractive index are investigated and discussed. The obtained results show that NaCaZ have low value of reflectivity and high absorption coefficient in low ultraviolet and visible regions and exhibit small changes under pressure. Pressure-based elastic constants and their derivative parameters show that NaCaZ are mechanically stable and have brittle nature. Above 10 GPa, NaCaP and NaCaAs have ductile nature. The phonon dispersions calculations with pressure show that NaCaN and NaCaP are dynamically stable, in contrast, NaCaAs is dynamically unstable at ambient pressure. Above 10 GPa, the studied compounds are dynamically stable. The mechanically, dynamically stable with low reflectivity and high absorption coefficient in the low ultraviolet and visible regions make these materials more promising as absorbers of solar cells, optoelectronic and 2D applications. [ABSTRACT FROM AUTHOR]

The structural stability analysis of various phases of GeTMS3(TM=Sc, Fe, Zn) sulfide perovskite has been conducted utilizing the WIEN2k package. This investigation leverages density functional theory (DFT) within the full potential linearized augmented plane wave (FP-LAPW) method, employing GGA-mBJ potentials. The focus of this study has encompassed the computation of structural, magnetic, and optical attributes across distinct GeTMS3 phases. These materials have been identified as promising contenders for applications in photovoltaics and spintronics. The study reveals the stability of various phases, with the orthorhombic phase proving energetically favorable for GeScS3 and GeZnS3, and the tetragonal phase for GeFeS3. Magnetic analyses indicate favorable ferromagnetic behavior in GeFeS3 and nonmagnetic characteristics in GeScS3 and GeZnS3. Furthermore, electronic examinations unveil semimetallic and semiconducting behaviors in GeScS3 and GeZnS3 in the tetragonal, respectively, with GeFeS3 exhibiting a half-metallic nature in the orthorhombic phase. Optical properties illustrate their potential as light harvesters, displaying characteristics suitable for energy conversion applications. This study contributes to a deeper understanding of sulfide perovskite properties, offering insights into potential applications in diverse technological fields. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) MXenes, having comparable transport properties like graphene and a wide spectrum application, are often limited to being used in optoelectronics due to metallic bandgap. Here, by employing density functional theory we report the bandgap engineering and tuning optoelectronic properties through modulating the anions of novel 2D spinel Hf3X2O2 (X = N, P and As) MXenes structures and show that the material class can be among the few semiconducting MXenes. Phonon spectra and cohesive energies confirm that these structures are dynamically stable and chemically exothermic. Modulating anions X = N, P, and As in Hf3X2O2, the electronic bandgaps are found ∼0.46 eV for N, metallic for P, and ∼48 meV for As atoms, suggesting the semiconducting, metallic, and semi-metallic MXenes. The biaxial strains are incorporated to tune the features: In the Hf3N2O2 structure, the bandgap is increased with both compressive and tensile strains, while for the Hf3As2O2 structure, the gap decreased at the GGA-PBE level. For Hf3P2O2 structures, the bandgaps are all metallic irrespective of pristine or biaxial strain. Spin–orbit coupling SOC+GGA reveals that Hf3N2O2 is highly spin responsive while Hf3As2O2 shows semi-metal-to-metallic bandgap transition for pristine as well as biaxial strained conditions. From optical properties analysis, optical absorptions are found located in the visible spectral regions that are also highly receptive to biaxial strains. These properties we have unleashed for the novel Hf3X2O2 (X = N, P, As) semiconducting MXene, thus, show the potentiality of the utilization of the material class in nanoelectronics and optoelectronics applications. [ABSTRACT FROM AUTHOR]

Based on the superior properties of g-CN and GaGePS monolayers, this paper investigates the optoelectronic properties of the g-CN/GaGePS van der Waals heterostructure under strain and external electric field modulation using density functional theory. The results show that g-CN/GaGePS heterostructure has a type II band alignment and possesses an indirect band gap of 0.986eV, which exhibits enhanced absorption in the visible and ultraviolet range. Under the application of a biaxial strain of 7 %, the g-CN/GaGePS heterostructure undergoes a transition from type II to type I. Furthermore, the electric field not only modulates the g-CN/GaGePS band gap, but also induces band alignment (type II to type Ⅰ) and an indirect gap to direct gap transition. The absorption in the visible range is enhanced by a positive electric field, whereas a negative electric field exerts the opposite effect. A negative electric field enhances UV range absorption. These results suggest that the g-CN/GaGePS heterostructure has prospective applications in optoelectronic devices. [ABSTRACT FROM AUTHOR]

In this paper, we prepared an innovative heterogeneous structure by stacking monolayers of Sc 2 CF 2 on isolated WSSe. Base on the first principles and density functional theory, the interface stability, electronic properties, optical properties of the two-dimensional Sc 2 CF 2 /WSSe heterostructure are discussed by calculation and further verification. The results show that the heterostructure has a indirect band gap of 1.00 eV (GGA-PBE), and has a direct-Z band arrangement profitable for water splitting. The heterostructure shows greater capability of the segregation of photogenerated electron-hole pairs directly. The optical properties was studied for further consideration. Moreover the associated edge positions also satisfy the thermodynamic requirements of water spitting when pH = 7. The heterostructure of Sc 2 CF 2 /WSSe shows reinforced optical properties relative to monolayers and feasibility in photocatalysis. • Electronic and optical properties of Sc 2 CF 2 /WSSe heterostructure. • The Sc 2 CF 2 /WSSe heterostructure exhibits Z-scheme band alignment. • The compatibility of spontaneous OER on Sc 2 CF 2 /WSSe heterostructure under mild circumstance. [ABSTRACT FROM AUTHOR]