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• Demonstration of the efficacy of FT-IR in characterizing materials. • Usage of FT-IR considering of thickness and absorption coefficient effects. • Explanation of dipolar electric moment, overtone bands, and Fermi resonance. • Vibrational modes in 1D, 2D, and 3D systems and IR spectrum representation. • Criteria for the correct FT-IR band identification. This paper investigates the application of Fourier-transform infrared (FT-IR) spectroscopy by analyzing a commercially available plastic bag as an example. The study investigates the vibrational modes, mechanical properties, and structural changes of a bare sample during a tensile test. By measuring the absorption bands and their intensities, valuable information about the chemical composition and the concentration of certain components in the plastic bag is obtained. The behavior of vibrational modes in one, two, and three-dimensional systems is studied, with a focus on their representation in the IR spectrum. The concept of the dipolar electric moment and phenomena such as overtone bands and Fermi resonance are also explained. The X-ray patterns of the bag show talc and polyethylene crystalline phases. Scanning electron microscopy (SEM) determines the thickness of the sample. Tensile tests are performed to investigate the mechanical behavior of the plastic bags. This study demonstrates the informative and educational capabilities of FT-IR spectroscopy in studying the vibrational, mechanical, and structural properties of materials, with an emphasis on the correct application of this technique. The study highlights the importance of considering the effects of thickness and absorption coefficient and applying the Beer-Lambert law to understand the changes in vibrational modes during tensile testing. The results contribute to a deeper understanding of the structural behavior of plastic bags and demonstrate the effectiveness of FT-IR spectroscopy in characterizing such materials. [Display omitted] [ABSTRACT FROM AUTHOR]

In this paper, we study the electromagnetically induced transparency (EIT) of a quantum ring by considering both interband and intraband transitions, under the influence of external electric and magnetic fields, as well as Rashba spin–orbit interaction (RSOI). Four band k ⋅ p model along with effective mass one band approximation were respectively employed to compute valence and conduction bands energy eigenvalues. We investigate the effects of applied electric and magnetic fields, as well as RSOI and the ring dimensions, on EIT. Our results reveal that the external magnetic field and the ring dimensions have a great influence on the EIT phenomenon. Ultimately, our numerical results will be used to develop devices with controllable nonlinear optical absorption and refraction. • Kohn-Luttinger Hamiltonian for holes is derived within the cylindrical coordinates. • Fields effect as well as RSOI on interband EIT in a QR are investigated. • Magnetic field has a great influence on EIT and the transparency window. • The ring size considerably changes the transparency window. [ABSTRACT FROM AUTHOR]

Herein, we propose that the commonly used methylammonium cation (CH 3 NH 3 +) in CH 3 NH 3 PbI 3 (MAPbI 3) be replaced with ethyl-phosphonium cation CH 3 CH 2 PH 3 + (EP+), allowing stronger electronic coupling between the PbI 6 octahedra and the organic cation and thereby increasing its stability. This paper will examine EP + based hybrid perovskite (CH 3 CH 2 PH 3 PbI 3 or EPPbI 3) as an alternative absorber material for photovoltaic cells of high efficiency and that too at affordable processing costs. By using FP-LAPW + lo methodology as used in density functional theory (DFT), we have examined physical features such as the bandgap energy, distribution of valence electron density, DOS, and optical and thermodynamical coefficients. We also simulated the performance of solar cells by employing EPPbI 3 as PVA material using SCAPS-1D. The findings of the current study viz. an absorption coefficient surpassing 10 4 cm−1, a direct forbidden energy gap of 1.388 eV and simulated PCE of 31.8%, is enough to support applicability EPPbI 3 perovskite as a PVA material. [ABSTRACT FROM AUTHOR]

In this paper, we studied the effects of the annealing temperature of nickel oxide (NiO x) thin films on the structural, optical, and electrical transport properties. Thin NiO x was synthesized by the sol-gel method, followed by annealing at different temperatures varying from 200 to 450 °C. From the obtained AFM image data, an increase in the surface Ra value is observed with rising film annealing temperature. The decrease in film thickness with increasing annealing temperature is associated with significant densification of NiO x. During thermal annealing, a change in the redistribution of Ni/O elements is seen in the films. The increase in the intensity of the (1P)LO scattering peak in NiO x with rising annealing temperature is associated with a growth in the density of defects due to Ni vacancies. When the annealing temperature reaches 250 °C, an increase in Eg = 3.49 eV is detected; a further rise of the annealing temperature leads to a decrease in Eg = 2.92 eV. The increase in the index n of films with rising annealing temperature is associated with the formation of a denser and more ordered NiO x film. A rise in the annealing temperature of NiO x films leads to an increase in the value of the total resistance of the films, a decrease in the resistance of hole recombination at the NiO x /electrode interface, and the value of the conditional mobility of holes. • An increase in the RMS value of films with increasing annealing temperature is associated with an increase in grain size on the surface. • At an annealing temperature of 250 °C, an increase in Eg is observed; a further increase in the annealing temperature leads to a decrease in Eg. • An increase in the extinction coefficient and dispersion index is associated with the densification of the NiO x film with increasing annealing temperature. • An increase in film density with increasing annealing temperature leads to an increase in the NiO x resistance and a decrease in the value of the conditional hole mobility. [ABSTRACT FROM AUTHOR]