Search

Two-dimensional (2D) materials are ideal candidates for building optoelectronic devices, owing to their fascinating photoelectric properties. However, most photodetectors based on individual 2D materials face difficulties in achieving both high responsivity and fast response. In this paper, we have fabricated high-quality vertically stacked MoS2/MoSe2 van der Waals (vdW) heterostructures using dry transfer method. The strong built-in electric field at the interface of type II heterostructure effectively facilitates the separation of photogenerated carriers. The vdW contact between channel material and transferred metal electrode effectively avoids the introduction of defects. These methods effectively enhance the performance of hybrid devices. Under 532 nm laser illumination, this photodetector exhibits high responsivity (528.1 A/W) and fast photoresponse (rise time ∼3.0 μs/decay time ∼31.3 μs). Furthermore, we demonstrated single-pixel image sensing capabilities of the device at room temperature across various modulation frequencies. Importantly, imaging at a frequency as high as 15 000 Hz was attained, indicating its great potential for next-generation, high-performance single-pixel image sensing applications. [ABSTRACT FROM AUTHOR]

Van der Waals (vdW) heterostructures based on inorganic layered materials have been demonstrated as potential candidates for a variety of electronic applications due to their flexibility in energy band engineering. However, the presence of unstable charge-trapping states in atomically thin two-dimensional (2D) materials may limit the performance of devices. Here, we aim to conduct a systematic investigation on hybrid heterostructured memory devices that consist of 2D layered organic and inorganic materials. The objective is to explore the potential of these devices in offering efficient charge-trapping states. Molybdenum disulfide (MoS2) is employed as a channel, while N, N′-Dimethyl-3,4,9,10-perylenedicarboximide (Me-PTCDI) serves as the charge-trapping layer to store charges from MoS2. The hysteresis window of these heterostructured devices can be effectively modified within a range of 13–70 V by manipulating both the thickness of the organic layer and the gate voltages. The largest hysteresis window is found in a combination of a few-layer Me-PTCDI (12.6 nm) and MoS2 (6 nm), showing a high on/off current ratio (>104) and a long retention time (104 s). Furthermore, the endurance test, which lasts for over 1000 cycles, demonstrates an exceptional level of stability and reliability. In addition, multilevel memory effects can be observed when gate pulses with different widths and amplitudes are applied. These 2D hybrid heterostructured devices have the capability to broaden the scope of material systems and present substantial potential for functional neuromorphic applications. [ABSTRACT FROM AUTHOR]