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Phosphorus‐, arsenic‐, and boron‐implanted junctions have been investigated with special emphasis on their annealing behavior of the junction‐leakage currents. It is shown that a minimum of about 900°C and 30 min annealing is required for junction qualities equal to that of diffused ones. Hall‐effect measurements of the implanted region show that about 900°C for phosphorus annealing and 1000°C for arsenic and boron annealing are required to restore carrier concentrations corresponding to the implanted impurities, respectively. The relative importance of surface area and perimeter contribution to the junction leakage is identified. It is shown that for an area‐to‐perimeter ratio smaller than about 1 mil, the perimeter contribution dominates. There are indications that the distribution of the leakage contributing g‐r centers coincide with the implanted impurities.

Large decreases in the conductivity of arsenic‐doped silicon have been observed during 500–970°C heat treatments. The rate of conductivity change depends upon the prior quenching rate from diffusion temperature to room temperature. These conductivity changes are reversed by higher‐temperature treatments. The relationship between the electrically active arsenic, as calculated from the conductivity, and the total arsenic is shown to be consistent with a model of substitutional arsenic atoms being nonionized when in a cluster or in a complex involving one or more vacancies.