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The energy losses of light ions channeled through Si were investigated by studying the energy distribution of the transmitted particles. Beams of protons, deuterons and helium ions have been used in the energy range from 0.9 to 5.0 MeV. Measurements of the energy losses were made for the , , axial and {111}, {110} planar directions. Comparison of the energy loss for different particles shows a correlation with a simple velocity dependent function. The energy loss as a function of the incident energy is discussed in terms of localized and non localized components of the stopping power.

The lattice disorder produced by 42-keV and 75-keV Hg ions implanted in Silicon at room temperature and the lattice location of the Hg atoms were studied by means of the channeling technique with a 2.0 MeV 4He+ beam. The damage produced was found to increase linearly with ion dose until a saturation value, connected to the ion range, is reached. The number of Si atoms displaced for Hg ion implanted was evaluated and compared with the theoretical expectation. The substitutional Hg fraction is connected to the disorder produced: the replacement mechanism is discussed.

Measurements of stopping power of protons in silicon in random and channeling conditions ( direction) in the energy-range between 300 to 50 keV have been performed. The trend of α-ratio has been reported.