26 results on '"Yang, Shu-Meng"'
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2. Synthesis, Gas Sensing and Photocatalytic Properties of Manganese-Doped and Potassium-Doped Hexagonal Tungsten Trioxide Nanowires
3. Fabrication and Physical Properties of Single-Crystalline Βeta-FeSi2 Nanowires
4. Synthesis and Physical Characteristics of Undoped and Potassium-Doped Cubic Tungsten Trioxide Nanowires through Thermal Evaporation
5. Controlled Synthesis and Enhanced Gas Sensing Performance of Zinc-Doped Indium Oxide Nanowires
6. Chemical Vapor Deposition-Fabricated Manganese-Doped and Potassium-Doped Hexagonal Tungsten Trioxide Nanowires with Enhanced Gas Sensing and Photocatalytic Properties
7. Fabrication and Photocatalytic Properties of Zinc Tin Oxide Nanowires Decorated with Silver Nanoparticles
8. Synthesis and Characterization of Indium Tin Oxide Nanowires with Surface Modification of Silver Nanoparticles by Electrochemical Method
9. Catalyst-free synthesis of tungsten oxide nanowires via thermal evaporation for fast-response electrochromic devices
10. Synthesis of morphology-improved single-crystalline iron silicide nanowires with enhanced physical characteristics
11. Gas Sensing of Chemical Vapor Deposition-Formed Zinc-Doped Indium Oxide Nanowires.
12. Synthesis of High-Density Indium Oxide Nanowires with Low Electrical Resistivity
13. Single Crystalline Higher Manganese Silicide Nanowire Arrays with Outstanding Physical Properties through Double Tube Chemical Vapor Deposition
14. Catalyst-Free Synthesis and Properties of Oxygen-Vacancy-Rich Tungsten Oxide Nanowires
15. Synthesis and Photocatalytic Properties of CuO-CuS Core-Shell Nanowires
16. Endoplasmic reticulum stress mediates the arsenic trioxide-induced apoptosis in human hepatocellular carcinoma cells
17. Set-Triggered-Parallel-Reset Memristor Logic for High-Density Heterogeneous-Integration Friendly Normally Off Applications
18. Inactivation of Akt by arsenic trioxide induces cell death via mitochondrial-mediated apoptotic signaling in SGC-7901 human gastric cancer cells
19. A Sub-0.3 V Area-Efficient L-Shaped 7T SRAM With Read Bitline Swing Expansion Schemes Based on Boosted Read-Bitline, Asymmetric-V$_{\rm TH}$ Read-Port, and Offset Cell VDD Biasing Techniques
20. A 260mV L-shaped 7T SRAM with bit-line (BL) Swing expansion schemes based on boosted BL, asymmetric-VTH read-port, and offset cell VDD biasing techniques
21. A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time
22. Noise-Immune Embedded NAND-ROM Using a Dynamic Split Source-Line Scheme for VDDmin and Speed Improvements
23. A 0.29V embedded NAND-ROM in 90nm CMOS for ultra-low-voltage applications
24. A Wide-VDD Embedded SRAM for Dynamic Voltage Asynchronous Systems
25. A Sub-0.3 V Area-Efficient L-Shaped 7T SRAM With Read Bitline Swing Expansion Schemes Based on Boosted Read-Bitline, Asymmetric-VTH Read-Port, and Offset Cell VDD Biasing Techniques.
26. Low-Voltage Embedded NAND-ROM Macros Using Data-Aware Sensing Reference Scheme for VDDmin, Speed and Power Improvement.
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