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We report on the magnetic coupling behavior in all-ferromagnetic La0.7Sr0.3MnO3/SrRuO3 (LSMO/SRO) heterostructures deposited on the SrTiO3 (111) substrate, where the interface leads to an enhanced exchange field as compared to the one deposited on SrTiO3 (001). Importantly, high-resolution scanning transmission electron microscopy reveals distinct interface structures of the (111) heterostructures depending on the growth sequence. The heterostructure with an SRO bottom layer shows an atomically flat and abrupt interface, while the one with an LSMO bottom layer shows a deformed interface due to the surface roughening of LSMO deposited directly on SrTiO3 (111). As a result, the heterostructure with an abrupt interface exhibits a robust antiferromagnetic coupling between LSMO and SRO, while the one with a rough interface shows negligible magnetic coupling. Our results demonstrate the key role of an abrupt interface in determining the magnetic properties of oxide heterostructures. [ABSTRACT FROM AUTHOR]

Individuals with genetic elimination of MLKL (mixed lineage kinase domain like pseudokinase) exhibit an increased susceptibility to neurodegenerative diseases like Alzheimer disease (AD). However, the mechanism is not yet fully understood. Here, we observed significant compromise in macroautophagy/autophagy in the brains of mlkl knockout (KO) mice, as evidenced by the downregulation of BECN1/Beclin1 and ULK1 (unc-51 like autophagy activating kinase 1). We identified UBA52 (ubiquitin A-52 residue ribosomal protein fusion product 1) as the binding partner of MLKL under physiological conditions. Loss of Mlkl induced a decrease in ubiquitin levels by preventing UBA52 cleavage. Furthermore, we demonstrated that the deubiquitinase (DUB) USP7 (ubiquitin specific peptidase 7) mediates the processing of UBA52, which is regulated by MLKL. Moreover, our results indicated that the reduction of BECN1 and ULK1 upon Mlkl loss is attributed to a decrease in their lysine 63 (K63)-linked polyubiquitination. Additionally, single-nucleus RNA sequencing revealed that the loss of Mlkl resulted in the disruption of multiple neurodegenerative disease-related pathways, including those associated with AD. These results were consistent with the observation of cognitive impairment in mlkl KO mice and exacerbation of AD pathologies in an AD mouse model with mlkl deletion. Taken together, our findings demonstrate that MLKL-USP7-UBA52 signaling is required for autophagy in brain through maintaining ubiquitin homeostasis, and highlight the contribution of Mlkl loss-induced ubiquitin deficits to the development of neurodegeneration. Thus, the maintenance of adequate levels of ubiquitin may provide a novel perspective to protect individuals from multiple neurodegenerative diseases through regulating autophagy.Abbreviations: 4HB: four-helix bundle; AAV: adeno-associated virus; AD: Alzheimer disease; AIF1: allograft inflammatory factor 1; APOE: apolipoprotein E; APP: amyloid beta precursor protein; Aβ: amyloid β; BECN1: beclin 1; co-IP: co-immunoprecipitation; DEGs: differentially expressed genes; DLG4: discs large MAGUK scaffold protein 4; DUB: deubiquitinase; EBSS: Earle's balanced salt solution; GFAP: glial fibrillary acidic protein; HRP: horseradish peroxidase; IL1B: interleukin 1 beta; IL6: interleukin 6; IPed: immunoprecipitated; KEGG: Kyoto Encyclopedia of Genes and Genomes; KO: knockout; MAP1LC3/LC3: microtubule associated protein 1 light chain 3; MLKL: mixed lineage kinase domain like pseudokinase; NSA: necrosulfonamide; OPCs: oligodendrocyte precursor cells; PFA: paraformaldehyde; PsKD: pseudo-kinase domain; SYP: synaptophysin; UB: ubiquitin; UBA52: ubiquitin A-52 residue ribosomal protein fusion product 1; UCHL3: ubiquitin C-terminal hydrolase L3; ULK1: unc-51 like autophagy activating kinase 1; UMAP: uniform manifold approximation and projection; UPS: ubiquitin-proteasome system; USP7: ubiquitin specific peptidase 7; USP9X: ubiquitin specific peptidase 9 X-linked. [ABSTRACT FROM AUTHOR]

Strain is an effective means of tuning the crystal structure to obtain a variety of fascinating properties, but how to apply flexible strain to meet the different needs of the film at each location has rarely been reported. In this study, a novel approach for designing strain‐damping structures that facilitate the imposition of flexible strain is introduced. A wide range of strain modulation is demonstrated in SmCoO3 films (a‐axis:+4.5%–+1.7%, b‐axis: +3.2%–+0.4%, c‐axis:+2.2%–+1.4%) under positive pressure by introducing Sm2O3 as a dopant. When SmCoO3 films are subjected to triaxial tensile strain, they exhibit a ferroelectric polarization of 7.12 µC cm−2. Through positive pressure modulation, resulting in a further increase in the ferroelectric polarization (up to 11.62 µC cm−2, which represents the maximum performance of the orthogonal rare earth transition metal oxide family). Moreover, the electron spin order can be effectively controlled, and the film's saturation magnetization increases to 14.83 emu cm−3 (+94.1%). This damping structure allows for flexible modulation of chemical strain in epitaxial film, achieving a delicate balance between film strain and structure, which provides valuable insights for all ferroelectrics based on structural distortion. [ABSTRACT FROM AUTHOR]

Strontium aluminate, with suitable lattice parameters and environmentally friendly water solubility, has been strongly sought for use as a sacrificial layer in the preparation of freestanding perovskite oxide thin films in recent years. However, due to this material's inherent water solubility, the methods used for the preparation of epitaxial films have mainly been limited to high-vacuum techniques, which greatly limits these films' development. In this study, we prepared freestanding single-crystal perovskite oxide thin films on strontium aluminate using a simple, easy-to-develop, and low-cost chemical full-solution deposition technique. We demonstrate that a reasonable choice of solvent molecules can effectively reduce the damage to the strontium aluminate layer, allowing successful epitaxy of perovskite oxide thin films, such as 2-methoxyethanol and acetic acid. Molecular dynamics simulations further demonstrated that this is because of their stronger adsorption capacity on the strontium aluminate surface, which enables them to form an effective protective layer to inhibit the hydration reaction of strontium aluminate. Moreover, the freestanding film can still maintain stable ferroelectricity after release from the substrate, which provides an idea for the development of single-crystal perovskite oxide films and creates an opportunity for their development in the field of flexible electronic devices. [ABSTRACT FROM AUTHOR]