1. Tailoring electrophotonic capabilities of atomically thin GeS through controlled organometallic intercalation.
- Author
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Iloanya, A. C., Kastuar, S. M., and Ekuma, C. E.
- Subjects
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FERMI level , *CHARGE carrier mobility , *GERMANIUM , *SULFIDES - Abstract
The unique structure of van der Waals materials facilitates a robust mechanism for precise control of physical properties. In this study, we present a comprehensive analysis based on the intercalation of organometallics to modulate the optoelectronic behavior of two-dimensional germanium sulfide (GeS). Advanced computational exploration reveals significant and tunable features in the intercalated material. Additionally, the weak chemical interactions between organometallics and GeS support the electric-field-mediated drift and charge–discharge processes in intercalants. Controlling the concentration of organometallics in this manner enables the dynamic emergence of novel characteristics post-intercalation. These include flatbands near the Fermi level, significant enhancement of carrier mobility, and a magnetic ground state that is atypical for pristine GeS. Our findings demonstrate that organometallic intercalation offers a powerful strategy for tailoring the optoelectronic and magnetic characteristics of GeS, paving the way for harnessing emerging features for applications in next-generation devices. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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