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Additive manufacturing using two-photon polymerization (TPP) lithography is increasingly used in industry and research. Parameter sweeps of cuboid structures fabricated using TPP lithography were investigated across the parameters of the laser power and scan speed to find dependent mechanical material properties. The employed photoresists were examined using Raman spectroscopy to find the degree of conversion (DC) of monomer to polymer, and subsequently, micro- or nanoindentation was used to find Young’s modulus (E). For the photoresist IP-Dip, the attained DC and E ranged from 20% to 45% and 1 to 2.1 GPa, respectively. The results were compared with reports found in the literature. For IP-Q, the attained DC and E ranged from 53% to 80% and 0.5 to 1.3 GPa, respectively. The characterized properties of IP-Q manifest as the current state of knowledge of the material.

Chip-package interaction-caused mobility degradation in CMOS transistors is a critical degradation mechanism for microelectronic devices. An approach based on nondestructive indentation is applied to induce highly localized stress fields. Strain-sensitive ring oscillator circuits are integrated to monitor parametric deviations during mechanical loading. In this study, the indentation technique is used to investigate the impact of the chip layout and geometry of a flip chip-packaged test chip. Complementary FE simulation provides a better understanding of the relevant stress-strain fields and enables a comparison of the parametric circuit deviations within a dedicated stress tensor. The results demonstrate the capability to study the stress-strain distribution in microelectronic devices during external loading with indentation and to determine its impact on transistor degradation.