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The use of multiple wavelengths to excite Titanium Dioxide Raman scattering in the near-infrared was investigated for optical nanothermometry. Indeed, Raman spectroscopy can be a very interesting technique for this purpose, as it offers non-disruptive contactless measurements with a high spatial resolution, down to a few µm. A method based on the ratio between the anti-Stokes and Stokes peaks of Anatase Titanium Dioxide was proposed and tested at three different wavelengths, 785, 800 and 980 nm, falling into the first biological transparency window (BTW-I). Using a temperature-controller stage, the temperature response of the sample was measured between 20 and 50 °C, allowing the thermal sensitivity for this range to be estimated. The use of sufficiently high laser power results in the generation of local heating. A proof of concept of the proposed thermometric method was performed by determining the extent of local heating induced by increasing laser power. By exciting with an 800 nm laser at low power intensities, a temperature equal to room temperature (RT) was found, while a maximum temperature increase of 15 °C was detected using the anti-Stokes/Stokes method. [ABSTRACT FROM AUTHOR]

The unique electrical properties of silicon nitride have increased the applications in microelectronics, especially in the manufacture of integrated circuits. Silicon nitride is mainly used as a passivation barrier against water and sodium ion diffusion and as an electrical insulator between polysilicon layers in capacitors. The interface with different materials, like semiconductors and metals, through soldering may induce residual strains in the final assembly. Therefore, the dentification and quantification of strain becomes strategically important in optimizing processes to enhance the performance, duration, and reliability of devices. This work analyzes the thermomechanical local strain of semiconductor materials used to realize optoelectronic components. The strain induced in the β-Si3N4 chips by the soldering process performed with AuSn pre-formed on copper substrates is investigated by Raman spectroscopy in a temperature range of −50 to 180 °C. The variation in the position of the E1g Raman peak allows the calculation of the local stress present in the active layer, from which the strain induced during the assembly process can be determined. The main reason for the strain is attributed to the differences in thermal expansion coefficients among the various materials involved, particularly between the chip, the interconnection material, and the substrate. Micro-Raman spectroscopy allows for the assessment of how different materials and assembly processes impact the strain, enabling more informed decisions to optimize the overall device structure. [ABSTRACT FROM AUTHOR]

Integrated circuits are created by interfacing different materials, semiconductors, and metals, which are appropriately deposited or grown on substrates and layers soldered together. Therefore, the characteristics of starting materials and process temperatures are of great importance, as they can induce residual strains in the final assembly. Identifying and quantifying strain becomes strategically important in optimizing processes to enhance the performance, duration, and reliability of final devices. This work analyzes the thermomechanical local strain of semiconductor materials used to realize LED modules for lighting applications. Gallium Nitride active layers grown on sapphire substrates and Si chips are assembled by soldering with eutectic AuSn on copper substrates and investigated by Raman spectroscopy in a temperature range of −50 to 180 °C. From the Raman mapping of many different samples, it is concluded that one of the leading causes of strain in the GaN layer can be attributed to the differences in the thermal expansion coefficient among the various materials and, above all, among the chip, interconnection material, and substrate. These differences are responsible for forces that slightly bend the chip, causing strain in the GaN layer, which is most compressed in the central region of the chip and slightly stretched in the outer areas. [ABSTRACT FROM AUTHOR]

Local temperature determination is essential to understand heat transport phenomena at the nanoscale and to design nanodevices for biomedical, photonic, and optoelectronic applications. In particular, the detection of the local temperature of the intracellular environment is interesting for photothermal therapy. In the present work, nanoparticles consisting of an Ag core, covered by a TiO2 shell and Ag@TiO2 core–shell, were suitably synthesized through a one-pot method. Silver nanoparticles synthesized in DMF were coated by controlled hydrolysis of titanium tetrabutoxide in the same reaction environment. The synthesis led to nanocomposites where AgNPs were covered by a diffuse layer of anatase. The nanocomposites were characterized using UV/Vis spectroscopy and Raman spectroscopy. The samples obtained proved to be good Raman nanothermometers with a sensitivity comparable to that of simple anatase nanoparticles. [ABSTRACT FROM AUTHOR]

The synthesis and two photon-induced absorption (TPA) properties of a functionalized distyrylbenzene (DSB) containing a tetra-azacyclododecane (cyclen) receptor for Zn(II) are presented. The experiments show that the TPA action spectrum of uncomplexed distrylbenzene, at 750 nm employing nanosecond-long excitation pulses, is 5 times more intense than that of the complexed form.

A novel configuration of a longitudinally two-photon pumped (TPP) and frequency-upconverted cavity lasing was obtained using a planar dye-doped film leaky waveguide geometry. Results showed net conversion energy from the absorbed pump pulse energy to the output upconverted cavity lasing energy to be 0.65%. It is believed that the lasing efficiency can be improved through the optimization of system parameters.

The impact of the measurement technique and the laser pulse characteristics on the determination of the effective two-photon absorption (TPA) cross section of heteroaromatic quadrupolar dye is discussed. The wavelength dispersion and the cross section of the TPA are shown to highly depend on these parameters.