1. Diffusion thermopower of (Ga,Mn)As/GaAs tunnel junctions
- Author
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Naydenova, Ts., Dürrenfeld, P., Tavakoli, K., Pegard, N., Ebel, L., Pappert, K., Brunner, K., Gould, C., and Molenkamp, L. W.
- Subjects
Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy derivative of the density of states in the magnetic material, and thus has a strongly anisotropic response to the direction of magnetization in the material. The effect will have relevance to the operation of semiconductor spintronic devices, and may indeed already play a role in correctly interpreting the details of some earlier spin injection studies.
- Published
- 2011
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