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Surface acoustic wave (SAW) induced ferromagnetic resonance (FMR) is the critical principle of novel magnetoacoustic coupling devices, such as SAW non-reciprocal propagation and SAW-driven spin pumping. However, the enhancement of magnetoacoustic coupling is constrained by the attenuation of strain in magnetic thin films and the intricate manufacturing process of high-frequency SAW devices. This paper presents the observation of a pronounced enhancement in SAW-induced FMR within a ferromagnet/nonmagnet/ferromagnet (FM/NM/FM) multilayer structure deposited on a LiNbO3 piezoelectric substrate. This enhancement is driven by spin current transmission, facilitated by the non-parallel alignment of magnetizations between the two FM layers. The increased FMR response is evidenced by an elevated absorption of SAW energy by the magnetic layer, signifying improved magnetoacoustic coupling. This finding opens new avenues for advancing magnetoacoustic coupling devices, providing a pathway to enhanced control and functionality in applications that leverage magnetoacoustic interactions., Comment: 9 pages, 4 figures

Spin chirality in antiferromagnets offers new opportunities for spintronics. The kagome antiferromagnet Mn3Sn is a paradigmatic material in which the antiferromagnetic order parameter can be detected and controlled by electrical means. However, direct investigation of the magnetic texture of Mn3Sn has been challenging because of the tiny moment hosted in its magnetic octupole, hindering further clarification of this unique material. Here, we address this issue by observing the stray magnetic field from Mn3Sn using a diamond quantum scanning magnetometer. The spatially-resolved intrinsic domains and domain walls in a high-quality single-crystalline Mn3Sn film quantitatively reveal the polarization angle of the magnetic octupole in the kagome plane, the domain's local magnetization, the domain wall's width and chirality, and the octupole order in domain walls. Our nanoscale investigation of Mn3Sn, a powerful complement to macroscopic measurements, paves the road for developing chiral antiferromagnetism and its potential for spintronic applications., Comment: 17 pages, 4 figures

We study the Hanle and spin polarization recovery effects on resident electrons in a monolayer MoSe$_2$ on EuS. We demonstrate that localized electrons provide the main contribution to the spin dynamics signal at low temperatures below 15~K for small magnetic fields of only a few mT. The spin relaxation of these electrons is determined by random effective magnetic fields due to a contact spin interaction, namely the hyperfine interaction with the nuclei in MoSe$_2$ or the exchange interaction with the magnetic ions of the EuS film. From the magnetic field angular dependence of the spin polarization we evaluate the anisotropy of the intervalley electron $g$-factor and the spin relaxation time. The non-zero in-plane $g$-factor $|g_x|\approx 0.1$, the value of which is comparable to its dispersion, is attributed to randomly localized electrons in the MoSe$_2$ layer., Comment: 6 pages, 4 figures

Here, we report the observation of strong coupling between magnons and surface acoustic wave (SAW) phonons in a thin CoFeB film constructed in an on-chip SAW resonator by analyzing SAW phonon dispersion anticrossings. Our device design provides the tunability of the film thickness with a fixed phonon wavelength, which is a departure from the conventional approach in strong magnon--phonon coupling research. We detect a monotonic increase in the coupling strength by expanding the film thickness, which agrees with our theoretical model. Our work offers a significant way to advance fundamental research and the development of devices based on magnon--phonon hybrid quasiparticles., Comment: Main text 6 pages, 4 figures, plus supplemental materials

A key phenomenon that enables nanoscale spintronic devices is the efficient inter-conversion between spin and charge degrees of freedom. Here, we experimentally demonstrate a pathway to generate current-induced spin polarization at the interface between an insulating ferromagnet and a non-magnetic metal using interfacial exchange-field spin filtering. Measuring current-in-plane giant magnetoresistance in Py$|$Cu$|$EuS trilayer Hall cross devices, we induce a non-equilibrium spin polarization of $P_\text{neq}^\text{Cu|EuS}$=0.6% at a low charge current density of 1.88$\times$10$^3$ A/cm$^2$. This efficiency is comparable to that of conventional charge-to-spin conversion of spin-Hall or Rashba-Edelstein effects enabled by relativistic spin-orbit coupling. Interfacial exchange field filtering allows operation with largely reduced power consumption and magnetic reconfigurability, opening new pathways to nanoscale low-power insulator spintronics., Comment: 8 pages, 4 figures and 2 tables; Supplemental Material 4 pages, 3 figures

The utilization of orbital transport provides a versatile and efficient spin manipulation mechanism. As interest in orbital-mediated spin manipulation grows, we face a new issue to identify the underlying physics that determines the efficiency of orbital torque (OT). In this study, we systematically investigate the variation of OT governed by orbital Rashba-Edelstein effect at the Cu/Oxide interface, as we change the Oxide material. We find that OT varies by a factor of ~2, depending on the Oxide. Our results suggest that the active electronic interatomic interaction (hopping) between Cu and oxygen atom is critical in determining OT. This also gives us an idea of what type of material factors is critical in forming a chiral orbital Rashba texture at the Cu/Oxide interface.

Phonons and magnons are engineered by periodic potential landscapes in phononic and magnonic crystals, and their combined studies may enable valley phonon transport tunable by the magnetic field. Through nonreciprocal surface acoustic wave transmission, we demonstrate valley-selective phonon-magnon scattering in magnetoelastic superlattices. The lattice symmetry and the out-of-plane magnetization component control the sign of nonreciprocity. The phonons in the valleys play a crucial role in generating nonreciprocal transmission by inducing circularly polarized strains that couple with the magnons. The transmission spectra show a nonreciprocity peak near a transmission gap, matching the phononic band structure. Our results open the way for manipulating valley phonon transport through periodically varying magnon-phonon coupling.

Harnessing the causal relationships between mechanical and magnetic properties of van der Waals materials presents a wealth of untapped opportunity for scientific and technological advancement, from precision sensing to novel memories. This can, however, only be exploited if the means exist to efficiently interface with the magnetoelastic interaction. Here, we demonstrate acoustically-driven spin-wave resonance in a crystalline antiferromagnet, chromium trichloride, via surface acoustic wave irradiation. The resulting magnon-phonon coupling is found to depend strongly on sample temperature and external magnetic field orientation, and displays a high sensitivity to extremely weak magnetic anisotropy fields in the few~mT range. Our work demonstrates a natural pairing between power-efficient strain-wave technology and the excellent mechanical properties of van der Waals materials, representing a foothold towards widespread future adoption of dynamic magneto-acoustics., Comment: 14 pages, 7 figures (main text + supplemental material)

Nonlinear phenomena in physical systems can be used for brain-inspired computing with low energy consumption. Response from the dynamics of a topological spin structure called skyrmion is one of the candidates for such a neuromorphic computing. However, its ability has not been well explored experimentally. Here, we experimentally demonstrate neuromorphic computing using nonlinear response originating from magnetic-field induced dynamics of skyrmions. We designed a simple-structured skyrmion-based neuromorphic device and succeeded in handwritten digit recognition with the accuracy as large as 94.7 % and waveform recognition. Notably, there exists a positive correlation between the recognition accuracy and the number of skyrmions in the devices. The large degree of freedoms of skyrmion systems, such as the position and the size, originate the more complex nonlinear mapping and the larger output dimension, and thus high accuracy. Our results provide a guideline for developing energy-saving and high-performance skyrmion neuromorphic computing devices.

Electric-field controlled magnetization dynamics is an important integrant in low power spintronic devices. In this letter, we demonstrate electric-field induced parametric excitation for CoFeB/MgO junctions by using interfacial in-plane magnetic anisotropy. When the in-plane magnetic anisotropy and the external magnetic field are parallel to each other, magnons are efficiently excited by using electric-field induced parametric excitation. Its wavelength and wavenumber are tuned by changing input power and frequency of the applied voltage. A generalized phenomenological model is developed to explain the underlying role of the electric-field torque. Electrical excitation with no Joule heating offers a good opportunity for developing magnonic devices and exploring various nonlinear dynamics in magnetic systems., Comment: 10 pages, 5 figures, currently under review

We report chirality-induced current-in-plane magnetoresistance (CIP-MR) in chiral molecule/ferromagnetic metal bilayer at room temperature. The previously reported chiralityinduced current-perpendicular-to-plane magnetoresistance (CPP-MR) originates from the chiral induced spin-selectivity (CISS) effect that needs charge-current passing through the molecule. In contrast, the observed CIP-MR in the present study requires no bias charge current through the molecule. The temperature dependence of CIP-MR suggests thermally induced spin-polarization in the chiral molecules is the key for the observed MR., Comment: 11 pages, 4 figures

Chirality in organic molecules has attracted considerable attention in the fields of chemistry, biology, and spintronics. This paper reports on perpendicular magnetization hysteresis loops of a multilayer consisting of ultrathin Fe (001), chiral phthalocyanine molecule ((P)- or (M)-PbPc-DTBPh), and MgO (001). We find a chirality-dependent shift of the hysteresis loop. Unlike the previously reported bias current induced phenomena, the result shows a chirality-induced effective magnetic field in the phthalocyanine molecule in the absence of a bias current in the system. This study opens up a new direction in the emerging field of chiral molecular spintronics.

A magnetic Weyl semimetal is a recent focus of extensive research as it may exhibit large and robust transport phenomena associated with topologically protected Weyl points in momentum space. Since a magnetic texture provides a handle for the configuration of the Weyl points and its transport response, understanding of magnetic dynamics should form a basis of future control of a topological magnet. Mn3Sn is an example of an antiferromagnetic Weyl semimetal that exhibits a large response comparable to the one observed in ferromagnets despite a vanishingly small magnetization. The non-collinear spin order in Mn3Sn can be viewed as a ferroic order of cluster magnetic octupole and breaks the time-reversal symmetry, stabilizing Weyl points and the significantly enhanced Berry curvature near the Fermi energy. Here we report our first observation of time-resolved octupole oscillation in Mn3Sn. In particular, we find the giant effective damping of the octupole dynamics, and it is feasible to conduct an ultrafast switching at < 10 ps, a hundred times faster than the case of spin-magnetization in a ferromagnet. Moreover, high domain wall velocity over 10 km/s is theoretically predicted. Our work paves the path towards realizing ultrafast electronic devices using the topological antiferromagnet.

Patterned magnetic nanostructures are potential candidates for future energy efficient, on-chip communication devices. Here, we have experimentally and numerically studied the role of nanochannels to manipulate spin waves in Ni80Fe20 connected nanodot arrays of varying filling fraction. Rich spin-wave spectra are observed in these samples, where the number of spin-wave modes decreases with increasing filling fraction due to the retrenchment of the demagnetizing field. The nanochannels affect the spin-wave modes of the connected dots through dipole-exchange coupling. For all modes the vertical nanochannels couple the nanodots, except for the highest frequency modes where all nanochannels act as coupler. This feature is further explored in the simulation, which reveals that only the highest frequency mode can propagate through all the nanochannels, analogues to an electronic demultiplexer. This study will be useful to understand the role of nanochannels in patterned magnetic nanostructures and their applications in spin-wave based communication devices.

Electrical manipulation of emergent phenomena due to nontrivial band topology is a key to realize next-generation technology using topological protection. A Weyl semimetal is a three-dimensional gapless system that hosts Weyl fermions as low-energy quasiparticles. It exhibits various exotic phenomena such as large anomalous Hall effect (AHE) and chiral anomaly, which have robust properties due to the topologically protected Weyl nodes. To manipulate such phenomena, the magnetic version of Weyl semimetals would be useful as a magnetic texture may provide a handle for controlling the locations of Weyl nodes in the Brillouin zone. Moreover, given the prospects of antiferromagnetic (AF) spintronics for realizing high-density devices with ultrafast operation, it would be ideal if one could electrically manipulate an AF Weyl metal. However, no report has appeared on the electrical manipulation of a Weyl metal. Here we demonstrate the electrical switching of a topological AF state and its detection by AHE at room temperature. In particular, we employ a polycrystalline thin film of the AF Weyl metal Mn$_3$Sn, which exhibits zero-field AHE. Using the bilayer device of Mn$_3$Sn and nonmagnetic metals (NMs), we find that an electrical current density of $\sim 10^{10}$-$10^{11}$ A/m$^2$ in NMs induces the magnetic switching with a large change in Hall voltage, and besides, the current polarity along a bias field and the sign of the spin Hall angle $\theta_{\rm SH}$ of NMs [Pt ($\theta_{\rm SH} > 0$), Cu($\theta_{\rm SH} \sim 0$), W ($\theta_{\rm SH} < 0$)] determines the sign of the Hall voltage. Notably, the electrical switching in the antiferromagnet is made using the same protocol as the one used for ferromagnetic metals. Our observation may well lead to another leap in science and technology for topological magnetism and AF spintronics., Comment: 49 pages, 14 figures

Surface acoustic waves (SAWs) in the GHz frequency range can inject spin currents dynamically into adjacent nonmagnetic layers via spin pumping effect associated with ferromagnetic resonance. Here, we demonstrate an enhancement of acoustic ferromagnetic resonance and spin current generation by a pair of SAW reflector gratings, which form an acoustic analogue of the distributed Bragg reflector cavity. In the experiment, we confirmed 2.04 $\pm$ 0.02 times larger SAW power absorption in a device with cavity than in case of no acoustic cavity. We confirmed up to 2.96 $\pm$ 0.02 times larger spin current generation by measuring electric voltages generated by the inverse Edelstein effect (IEE) at the interface between Cu and Bi$_2$O$_3$. The results suggest that acoustic cavities would be useful to enhance the conversion efficiency in SAW driven coupled magnon-phonon dynamics., Comment: Main text and Supplemental Material

Efficient spin/charge interconversion is desired to develop innovative spin-based devices. So far, the interconversion has been performed by using heavy atomic elements, strong spin-orbit interaction of which realizes the interconversion through the spin Hall effect and the Edelstein effect. We demonstrate highly efficient charge-to-spin conversion in a ferromagnetic metal/Cu/Al2O3 trilayers, which do not contain any heavy element. The resulting spin torque efficiency is higher than those of conventional spin Hall and Rashba systems consisting of heavy elements such as Pt and Bi. Our experimental results qualitatively deviate from typical behaviors arising from spin transport. However, they are surprisingly consistent with the behaviors arising from the orbital transport. Our results thus demonstrate a new direction for efficient charge-to-spin conversion through the orbital transport.

Voltage induced magnetization dynamics of magnetic thin films is a valuable tool to study anisotropic fields, exchange couplings, magnetization damping and spin pumping mechanism. A particularly well established technique is the ferromagnetic resonance (FMR) generated by the coupling of microwave photons and magnetization eigenmodes in the GHz range. Here we review the basic concepts of the so-called acoustic ferromagnetic resonance technique (a-FMR) induced by the coupling of surface acoustic waves (SAW) and magnetization of thin films. Interestingly, additional to the benefits of the microwave excited FMR technique, the coupling between SAW and magnetization also offers fertile ground to study magnon-phonon and spin rotation couplings. We describe the in-plane magnetic field angle dependence of the a-FMR by measuring the absorption / transmission of SAW and the attenuation of SAW in the presence of rotational motion of the lattice, and show the consequent generation of spin current by acoustic spin pumping., Comment: 6 pages, 6 figures, short review

One of the most fundamental forms of magnon-phonon interaction is an intrinsic property of magnetic materials, the "magnetoelastic coupling". This particular form of interaction has been the basis for describing magnetic materials and their strain related applications, where strain induces changes of internal magnetic fields. Different from the magnetoelastic coupling, more than 40 years ago, it was proposed that surface acoustic waves may induce surface magnons via rotational motion of the lattice in anisotropic magnets. However, a signature of this magnon-phonon coupling mechanism, termed magneto-rotation coupling, has been elusive. Here, we report the first observation and theoretical framework of the magneto-rotation coupling in a perpendicularly anisotropic ultra-thin film Ta/CoFeB(1.6 nm)/MgO, which consequently induces nonreciprocal acoustic wave attenuation with a unprecedented ratio up to 100$\%$ rectification at the theoretically predicted optimized condition. Our work not only experimentally demonstrates a fundamentally new path for investigating magnon-phonon coupling, but also justify the feasibility of the magneto-rotation coupling based application., Comment: 30 pages, 12 figures

We employ the spin absorption technique in lateral spin valves to extract the spin diffusion length of Permalloy (Py) as a function of temperature and resistivity. A linear dependence of the spin diffusion length with conductivity of Py is observed, evidencing that Elliott-Yafet is the dominant spin relaxation mechanism in Permalloy. Completing the data set with additional data found in literature, we obtain $\lambda_{Py}= (0.91\pm 0.04) (f\Omega m^2)/\rho_{Py}$., Comment: 8 pages, 4 figures, 2 tables

Oxide interfaces are a source of spin-orbit coupling which can lead to novel spin-to-charge conversion effects. In this work the contribution of the Bi$_2$O$_3$ interface to the anomalous Hall effect of Co is experimentally studied in Co/Bi$_2$O$_3$ bilayers. We evidence a variation of 40% in the AHE of Co when a Bi$_2$O$_3$ capping layer is added to the ferromagnet. This strong variation is attributed to an additional source of asymmetric transport in Co/Bi$_2$O$_3$ bilayers that originates from the Co/Bi$_2$O$_3$ interface and contributes to the skew scattering., Comment: 7 pages, 4 figures

Antiferromagnetic Weyl semimetal Mn$_3$Sn has shown to generate strong intrinsic anomalous Hall effect (AHE) at room temperature, due to large momentum-space Berry curvature from the time-reversal symmetry breaking electronic bands of the Kagome planes. This prompts us to investigate intrinsic spin Hall effect, a transverse phenomenon with identical origin as the intrinsic AHE. We report inverse spin Hall effect experiments in nanocrystalline Mn$_3$Sn nanowires at room temperature using spin absorption method which enables us to quantitatively derive both the spin diffusion length and the spin Hall angle in the same device. We observed clear absorption of the spin current in the Mn$_3$Sn nanowires when kept in contact with the spin transport channel of a lateral spin-valve device. We estimate spin diffusion length $\lambda_{s(Mn_3Sn)}$ $\sim$0.75 $\pm$0.67 nm from the comparison of spin signal of an identical reference lateral spin valve without Mn$_3$Sn nanowire. From inverse spin Hall measurements, we evaluate spin Hall angle $\theta_{SH}$ $\sim$5.3 $\pm$ 2.4 $\%$ and spin Hall conductivity $\sigma_{SH}$ $\sim$46.9 $\pm$ 3.4 ($\hbar/e$) ($\Omega$ cm)$^{-1}$. The estimated spin Hall conductivity agrees with both in sign and magnitude to the theoretically predicted intrinsic $\sigma_{SH}^{int}$ $\sim$36-96 ($\hbar/e$) ($\Omega$ cm)$^{-1}$. We also observed anomalous Hall effect at room temperature in nano-Hall bars prepared at the same time as the spin Hall devices. Large anomalous Hall conductivity along with adequate spin Hall conductivity makes Mn$_3$Sn a promising material for ultrafast and ultrahigh-density spintronics devices., Comment: 8 pages,3 figure with Supplementary materials

At interfaces with inversion symmetry breaking, Rashba effect couples the motion of electrons to their spin; as a result, spin-charge interconversion mechanism can occur. These interconversion mechanisms commonly exploit Rashba spin splitting at the Fermi level by spin pumping or spin torque ferromagnetic resonance. Here, we report evidence of significant photoinduced spin to charge conversion via Rashba spin splitting in an unoccupied state above the Fermi level at the Cu(111)/$\alpha$-Bi$_{2}$O$_{3}$ interface. We predict an average Rashba coefficient of $1.72\times 10^{-10}eV.m$ at 1.98 eV above the Fermi level, by fully relativistic first-principles analysis of the interfacial electronic structure with spin orbit interaction. We find agreement with our observation of helicity dependent photoinduced spin to charge conversion excited at 1.96 eV at room temperature, with spin current generation of $J_{s}=10^{6}A/m^{2}$. The present letter shows evidence of efficient spin-charge conversion exploiting Rashba spin splitting at excited states, harvesting light energy without magnetic materials or external magnetic fields., Comment: 7 pages, 4 figures in main text and 5 figures in appendix

The formation of novel two-dimensional electron gas (2DEG) with high mobility in metal/amorphous interfaces has motivated an ongoing debate regarding the formation and novel characteristics of these 2DEGs. Here we report an optical study, based on infrared spectroscopic ellipsometry, of nonmagnetic metal and amorphous semiconducting oxide (Cu/Bi$_2$O$_3$) interfaces that confirms the formation of a 2DEG with spin orbit coupling (SOC). The 2DEG optical response was simulated with a uniaxial diagonal dielectric tensor within a sub-nanometer thin layer, where its $x$ and $z$ components lineshapes resolved in both free-electron and peak-like contributions, resulted very similar to theoretical predictions [M. Xie et al., Phys. Rev. B $\bf{89}$, 245417 (2014)] of a two dimensional electron gas confined in the normal direction of a perovskite interface. In particular, the small but finite conducting character of the $z$ component provides a unambiguous signature of the presence of the 2DEG in the Cu/Bi$_2$O$_3$ system. Although the original constituent materials do not possess spin-orbit coupling (SOC), the resulting interfacial hybridization of such states induce electronic asymmetric wave functions. This work demonstrates the detection of 2DEG in amorphous crystals allowing to study its challenging interfacial phenomena such as SOC and interface-bulk coupling, overcoming an experimental impediment which has hold back for decades important advancements for the understanding of 2DEGs in amorphous materials., Comment: 10 pages main text, under review at Phys. Rev. B

We have experimentally elucidated the correlation between inverse and direct Edelstein Effects (EEs) at Bi2O3/Cu interface by means of spin absorption method using lateral spin valve structure. The conversion coefficient {\lambda} for the inverse EE is determined by the electron momentum scattering time in the interface, whereas the coefficient q for the direct EE is by the spin ejection time from the interface. For the Bi2O3/Cu interface, the spin ejection time was estimated to be ~ 53 fs and the momentum scattering time ~ 13 fs at room temperature, both of which contribute to the total momentum relaxation time that defines the resistivity of the interface. The effective spin Hall angle for the Bi2O3/Cu interface amounts to ~ 10% which is comparable to commonly used spin Hall material such as platinum. Interesting to note is that the experimentally obtained Edelstein resistances given by the output voltage divided by the injection current for direct and inverse effects are the same. Analysis based on our phenomenological model reveals that the larger the momentum scattering time, the more efficient direct EE; and the smaller spin ejection time, the more efficient inverse EE.

Active control of spin-wave dynamics is demonstrated using broadband ferromagnetic resonance in two-dimensional Ni80Fe20 antidot lattices arranged in hexagonal lattice with fixed lattice constant but varying antidot diameter. A strong modification in the spin-wave spectra is obtained with the variation in the antidot diameter as well as with the strength and orientation of the bias magnetic field. A broad band of modes is observed for the lattice with higher antidot diameter which decreases systematically as the antidot diameter is reduced. A crossover between the higher frequency branches is achieved in lattices with higher antidot diameter. In addition, the spin-wave modes in all lattices show a strong six-fold anisotropic behaviour due to the variation of internal field distribution as a function of the bias-field orientation. A mode hopping-like behavior is observed in the angular dispersions of spin-wave spectra for samples having intermediate hole diameters. Micromagnetic simulations qualitatively reproduce the experimentally observed spin-wave modes and the simulated mode profiles reveal the presence of extended and quantized standing spin-wave modes in these lattices. These observations are significant for large tunability and anisotropic propagation of spin waves in GHz frequency magnetic devices.

We demonstrate a large angular dependence of magnetization dynamics in Ni80Fe20 nano-cross arrays of varying sizes. By subtle variation of the azimuthal angle of an in-plane bias magnetic field, the spin configuration and the ensuing spin-wave dynamics, including mode softening, mode splitting, mode crossover and mode merging, can be drastically varied to the extent that a frequency minimum corresponding to mode softening converts to a mode crossover, various mode splitting and mode crossover disappear and additional mode splitting appears. Numerically simulated spin-wave spectra and phase profiles revealed the nature of various spin-wave modes and the origin of above variation of the dynamics with bias-field angle. All of these above observations are further modified with the variation of dimensions of the nano-cross. The numerically calculated magnetostatic field distributions further supports the variation of dynamics with bias-field angle. These results open a new avenue for engineering the nano-cross based magnetic devices such as magnetic storage, spin-wave logic and on-chip data communication devices.

We study the mechanisms of the spin Hall effect (SHE) and anomalous Hall effect (AHE) in 3$d$ ferromagnetic metals (Fe, Co, permalloy (Ni$_{81}$Fe$_{19}$; Py), and Ni) by varying their resistivities and temperature. At low temperatures where the phonon scattering is negligible, the skew scattering coefficients of the SHE and AHE in Py are related to its spin polarization. However, this simple relation breaks down for Py at higher temperatures as well as for the other ferromagnetic metals at any temperature. We find that, in general, the relation between the SHE and AHE is more complex, with the temperature dependence of the SHE being much stronger than that of AHE., Comment: 7 pages, 5 figures

The Weyl antiferromagnet Mn$_3$Sn has recently attracted significant attention as it exhibits various useful functions such as large anomalous Hall effect that are normally absent in antiferromagnets. Here we report the thin film fabrication of the single phase of Mn$_3$Sn and the observation of the large anomalous Hall effect at room temperature despite its vanishingly small magnetization. Our work on the high-quality thin film growth of the Weyl antiferromagnet paves the path for developing the antiferromagnetic spintronics., Comment: 13 pages, 4 figures, to appear in Applied Physics Letters

Spintronics aims to utilize the spin degree of freedom for information storage and computing applications. One major issue is the generation and detection of spins via spin and charge conversion. Quantum materials have recently exhibited many unique spin-dependent properties, which can be used as promising material candidates for efficient spin and charge conversion. Here, we review recent findings concerning spin and charge conversion in quantum materials, including Rashba interfaces, topological insulators, two-dimensional materials, superconductors, and non-collinear antiferromagnets. Important progress in using quantum materials for spin and charge conversion could pave the way for developing future spintronics devices., Comment: 41 pages, 9 figures, review article

We demonstrate a spin to charge current conversion via magnon-phonon coupling and inverse Edelstein effect on the hybrid device Ni/Cu(Ag)/Bi$_{2}$O$_{3}$. The generation of spin current ($J_{s}\approx 10^{8}A/m^{2}$) due to magnon - phonon coupling reveals the viability of acoustic spin pumping as mechanism for the development of spintronic devices. A full in-plane magnetic field angle dependence of the power absorption and a combination of longitudinal and transverse voltage detection reveals the symmetric and asymmetric components of the inverse Edelstein effect voltage induced by Rayleigh type surface acoustic waves. While the symmetric components are well studied, asymmetric components are widely unexplored. We assign the asymmetric contributions to the interference between longitudinal and shear waves and an anisotropic charge distribution in our hybrid device., Comment: 4 figures. 5 pages

Rashba effect describes how electrons moving in an electric field experience a momentum dependent magnetic field that couples to the electron angular momentum (spin). This physical phenomenon permits the generation of spin polarization from charge current (Edelstein effect), which leads to the buildup of spin accumulation. Spin accumulation due to Rashba Edelstein effect has been recently reported to be uniform and oriented in plane, which has been suggested for applications as spin filter device and efficient driving force for magnetization switching. Here, we report the X-ray spectroscopy characterization Rashba interface formed between nonmagnetic metal (Cu, Ag) and oxide (Bi$_{2}$O$_{3}$) at grazing incidence angles. We further discuss the generation of spin accumulation by injection of electrical current at these Rashba interfaces, and its optical detection by time resolved magneto optical Kerr effect. We provide details of our characterization which can be extended to other Rashba type systems beyond those reported here., Comment: 13 pages, 5 figures

Spin-to-charge current interconversions are widely exploited for the generation and detection of pure spin currents and are key ingredients for future spintronic devices including spin-orbit torques and spin-orbit logic circuits. In case of the spin Hall effect, different mechanisms contribute to the phenomenon and determining the leading contribution is peremptory for achieving the largest conversion efficiencies. Here, we experimentally demonstrate the dominance of the intrinsic mechanism of the spin Hall effect in highly-resistive Ta. We obtain an intrinsic spin Hall conductivity for $\beta$-Ta of -820$\pm$120 ($\hbar$/e) $\Omega^{-1}cm^{-1}$ from spin absorption experiments in a large set of lateral spin valve devices. The predominance of the intrinsic mechanism in Ta allows us to linearly enhance the spin Hall angle by tuning the resistivity of Ta, reaching up to -35$\pm$3%, the largest reported value for a pure metal., Comment: 9 pages and 4 figures + Supplemental Material (2 pages, 3 figures)

At the interface between a nonmagnetic metal (NM) and a ferromagnetic insulator (FI) spin current can interact with the magnetization, leading to a modulation of the spin current. The interfacial exchange field at these FI-NM interfaces can be probed by placing the interface in contact with the spin transport channel of a lateral spin valve (LSV) device and observing additional spin relaxation processes. We study interfacial exchange field in lateral spin valve devices where Cu spin transport channel is in proximity with ferromagnetic insulator EuS (EuS-LSV) and yttrium iron garnet Y$_3$Fe$_5$O$_{12}$ (YIG-LSV). The spin signals were compared with reference lateral spin valve devices fabricated on nonmagnetic Si/SiO$_2$ substrate with MgO or AlO$_x$ capping. The nonlocal spin valve signal is about 4 and 6 times lower in the EuS-LSV and YIG-LSV, respectively. The suppression in the spin signal has been attributed to enhanced surface spin-flip probability at the Cu-EuS (or Cu-YIG) interface due to interfacial spin-orbit field. Besides spin signal suppression we also found widely observed low temperature peak in the spin signal at $T \sim$30 K is shifted to higher temperature in the case of devices in contact with EuS or YIG. Temperature dependence of spin signal for different injector-detector distances reveal fluctuating exchange field at these interfaces cause additional spin decoherence which limit spin relaxation time in addition to conventional sources of spin relaxation. Our results show that temperature dependent measurement with pure spin current can be used to probe interfacial exchange field at the ferromagnetic insulator-nonmagnetic metal interface., Comment: 10 pages, 3 figures, accepted in Physical Review B

Large spin splitting at Rashba interface, giving rise to strong spin-momentum locking, is essential for efficient spin-to-charge conversion. Recently, a Cu/Bismuth oxide (Bi2O3) interface has been found to exhibit an efficient spin-to-charge conversion similar to a Ag/Bi interface with large Rashba spin splitting. However, the guiding principle of designing the metal/oxide interface for the efficient conversion has not been clarified yet. Here we report strong non-magnetic (NM) material dependence of spin splitting at NM/Bi2O3 interfaces. We employed spin pumping technique to inject spin current into the interface and evaluated the magnitude of interfacial spin-to-charge conversion. We observed large modulation and sign change in conversion coefficient which corresponds to the variation of spin splitting. Our experimental results together with first-principles calculations indicate that such large variation is caused by material dependent electron distribution near the interface. The results suggest that control of interfacial electron distribution by tuning the difference in work function across the interface may be an effective way to tune the magnitude and sign of spin-to-charge conversion and Rashba parameter at interface.

We report a systematic study on Edelstein magnetoresistance (Edelstein MR) in Co25Fe75/Cu/Bi2O3 heterostructures with a strong spin-orbit interaction at the Cu/Bi2O3 interface. We succeed in observing a significant dependence of the Edelstein MR on both Cu layer thickness and temperature, and also develop a general analytical model considering distinct bulk and interface contributions on spin relaxation. Our analysis, based on the above model, quantitatively illustrates a unique property of the spin transport near the Rashba interface, revealing a prominent role of the spin relaxation process by determining the ratios of the spin relaxation inside and outside the interface. We further find the characteristic spin transport is unaffected by temperature. Our results provide an essential tool for exploring the transport in a system with spin-momentum-locked two-dimensional states., Comment: 18 pages, 5 figures, Accepted in Phys. Rev. B Rapid Communications

Temperature gradient in a ferromagnetic conductor may generate a spontaneous transverse voltage drop in the direction perpendicular to both magnetization and heat current. This anomalous Nernst effect (ANE) has been considered to be proportional to the magnetization, and thus observed only in ferromagnets, while recent theories indicate that ANE provides a measure of the Berry curvature at the Fermi energy $E_{\rm F}$. Here we report the observation of a large ANE at zero field in the chiral antiferromagnet Mn$_3$Sn. Despite a very small magnetization $\sim 0.002$ $\mu_{\rm B}/$Mn, the transverse Seebeck coefficient at zero field is $\sim 0.35~\mu$V/K at room temperature and reaches $\sim 0.6~\mu$V/K at 200 K, comparable with the maximum value known for a ferromagnetic metal. Our first-principles calculation reveals that the large ANE comes from a significantly enhanced Berry curvature associated with the Weyl points nearby $E_{\rm F}$. The ANE is geometrically convenient for the thermoelectric power generation, as it enables a lateral configuration of the modules to efficiently cover the heat source. Our observation of the large ANE in an antiferromagnet paves a way to develop a new class of thermoelectric material using topological magnets to fabricate an efficient, densely integrated thermopile., Comment: 43 pages, 10 figures, 2 tables

Here, we investigate spin Hall angle of Pt in Ni80Fe20/Pt bilayer system by using a broadband spin pumping and inverse spin Hall effect measurement. An out-of-plane excitation geometry with application of external magnetic field perpendicular to the charge current direction is utilized in order to suppress unwanted galvanomagnetic effects. Magnetization precession angle on ferromagnetic resonance for wide excitation frequency range (4-14 GHz) is estimated from the rectification voltage of anisotropic magnetoresistance (AMR) and a conventional method of using microwave power in a coplanar waveguide. A marked difference in the precession angle profiles for the different methods is observed, resulting in the large variation in estimated values of spin current density at Ni80Fe20/Pt interface. The frequency dependence of the spin current density estimated using AMR effect is found to be similar to that of the inverse spin Hall voltage. We obtain the frequency-invariant spin Hall angle of 0.067., Comment: accepted for publication in applied physics letters

We systematically measure and analyze the spin diffusion length and the spin Hall effect in Pt with a wide range of conductivities using the spin absorption method in lateral spin valve devices. We observe a linear relation between the spin diffusion length and the conductivity, evidencing that the spin relaxation in Pt is governed by the Elliott-Yafet mechanism. We find a single intrinsic spin Hall conductivity ($\sigma_{SH}^{int}=1600\pm150\: \Omega^{-1}cm^{-1}$) for Pt in the full range studied which is in good agreement with theory. For the first time we have obtained the crossover between the moderately dirty and the superclean scaling regimes of the spin Hall effect by tuning the conductivity. This is equivalent to that obtained for the anomalous Hall effect. Our results explain the spread of the spin Hall angle values in the literature and find a route to maximize this important parameter., Comment: 11 pages, 4 figures