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Herein, the electronic properties for undoped and carrier-doped tungsten disulfide (WS2) monolayer are systematically examined by using ab initio calculations. The results show that the pristine single-layer WS2 is a semiconductor with a direct bandgap nature and the electronic properties of WS2 are similar to 2H-MoS2 monolayer, which are consistent with previous reports. Besides, considerable changes are observed in the electron-doped WS2 monolayer when compared to the hole-doped. The dynamical stability of pristine and carrier-doped WS2 monolayer is also investigated by performing the phonon dispersion calculations. Further, the possibility of superconducting nature in carrier-doped single-layer WS2 is also studied by using the isotropic Migdal-Eliashberg theory with the combination of Wannier-Fourier interpolation. From the computed Eliashberg function, it has been concluded that electron doping to WS2 monolayer promises electron-phonon coupling strength and maximum critical temperature of around 17 K with doping concentration ranging from 0.4 to 0.16 electrons cell-1. [ABSTRACT FROM AUTHOR]