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Transform-limited photon emission from quantum emitters is essential for high-fidelity entanglement generation. In this study, we report the coherent optical property of a single negatively-charged lead-vacancy (PbV) center in diamond. Photoluminescence excitation measurements reveal stable fluorescence with a linewidth of 39 MHz at 6 K, close to the transform-limit estimated from the lifetime measurement. We observe four orders of magnitude different linewidths of the two zero-phonon-lines, and find that that the phonon-induced relaxation in the ground state contributes to this huge difference in the linewidth. Due to the suppressed phonon absorption in the PbV center, we observe nearly transform-limited photon emission up to 16 K, demonstrating its high temperature robustness compared to other color centers in diamond., Comment: 13 pages,4 figures

Phonons confined in mechanical resonators can be coupled to a variety of quantum systems and are expected to be applied to hybrid quantum systems. Diamond surface acoustic wave (SAW) devices are capable of high efficiency in phonon interaction with color centers in diamond. The temperature dependence of the quality factor is crucial for inferring the governing mechanism of coupling efficiency between phonons and color centers in diamond. In this paper, we report on the temperature dependence of the quality factor of an AlN/diamond SAW device from room temperature to 5 K. The temperature dependence of the quality factor and resonant frequency suggests that the mechanism of SAW dissipation in the AlN/diamond SAW resonator at 5 GHz is the phonon-phonon scattering in the Akheiser region, and that further cooling can be expected to improve the quality factor. This result provides a crucial guideline for the future design of AlN/diamond SAW devices., Comment: 10 pages, 5 figures

The coherent control of the orbital state is crucial for color centers in diamonds for realizing extremely low-power manipulation. Here, we propose the neutrally charged nitrogen-vacancy center, NV$^0$, as an ideal system for orbital control through electric fields. We estimate electric susceptibility in the ground state of NV$^0$ to be comparable to that in the excited state of NV$^-$. Also, we demonstrate coherent control of the orbital states of NV$^0$. The required power for orbital control is three orders of magnitude smaller than that for spin control, highlighting the potential for interfacing a superconducting qubit operated in a dilution refrigerator., Comment: 12 pages, 6 figures

Charge state instabilities have been a bottleneck for the implementation of solid-state spin systems and pose a major challenge to the development of spin-based quantum technologies. Here we investigate the stabilization of negatively charged nitrogen-vacancy (NV$^-$) centers in phosphorus-doped diamond at liquid helium temperatures. Photoionization of phosphorous donors in conjunction with charge diffusion at the nanoscale enhances NV$^0$ to NV$^-$ conversion and stabilizes the NV$^-$ charge state without the need for an additional repump laser. The phosphorus-assisted stabilization is explored and confirmed both with experiments and our theoretical model. Stable photoluminescence-excitation spectra are obtained for NV$^-$ centers created during the growth. The fluorescence is continuously recorded under resonant excitation to real-time monitor the charge state and the ionization and recombination rates are extracted from time traces. We find a linear laser power dependence of the recombination rate as opposed to the conventional quadratic dependence, which is attributed to the photo-ionization of phosphorus atoms., Comment: 8 pages, 4 figures

The longest spin coherence times for nitrogen-vacancy (NV) centers at room temperature have been achieved in phosphorus-doped n-type diamond. However, difficulty controlling impurity incorporation and the utilization of highly toxic phosphine gas in the chemical vapor deposition (CVD) technique pose problems for the growth of n-type diamond. In the present study, n-type diamond samples were synthesized by CVD using tert-butylphosphine, which is much less toxic than phosphine. The unintentional incorporation of nitrogen was found to be suppressed by incrementally increasing the gas flow rates of H2 and CH$_4$. Hall measurements confirmed n-type conduction in three measured samples prepared under different growth conditions. The highest measured Hall mobility at room temperature was 422 cm$^2$/(Vs). In the sample with the lowest nitrogen concentration, the spin coherence time ($T_2$) increased to 1.62 $\pm$ 0.10 ms. Optically detected magnetic resonance spectra indicated that all of the measured NV centers were aligned along the [111] direction. This study provides appropriate CVD conditions for growing phosphorus-doped n-type diamond with perfectly aligned NV centers exhibiting long spin coherence times, which is important for the production of quantum diamond devices.

Nitrogen-vacancy (NV) centers in diamond work as a quantum electrometer. Using an ensemble state of NV centers, we propose vector electrometry and demonstrate measurements in a diamond electronic device. A transverse electric field applied to the N-V axis under a high voltage was measured while applying a transverse magnetic field. The response of the energy level shift against the electric field was significantly enhanced compared with that against an axial magnetic field. Repeating the measurement of the transverse electric field for multiple N-V axes, we obtained the components of the electric field generated in the device., Comment: 17 pages, 7 figures

We demonstrate electrical detection of the $^{14}$N nuclear spin coherence of NV centers at room temperature. Nuclear spins are candidates for quantum memories in quantum-information devices and quantum sensors, and hence the electrical detection of nuclear spin coherence is essential to develop and integrate such quantum devices. In the present study, we used a pulsed electrically detected electron-nuclear double resonance technique to measure the Rabi oscillations and coherence time ($T_2$) of $^{14}$N nuclear spins in NV centers at room temperature. We observed $T_2 \approx$ 0.9 ms at room temperature. Our results will pave the way for the development of novel electron- and nuclear-spin-based diamond quantum devices., Comment: 8 pages, 9 figures

Nitrogen-vacancy (NV) centres in diamond hold promise in quantum sensing applications. A major interest in them is an enhancement of their sensitivity by the extension of the coherence time ($T_2$). In this report, we experimentally generated more than four dressed states in a single NV centre in diamond based on Autler-Townes splitting (ATS). We also observed the extension of the coherence time to $T_2 \sim$ 1.5 ms which is more than two orders of magnitude longer than that of the undressed states. As an example of a quantum application using these results we propose a protocol of quantum sensing, which shows more than an order of magnitude enhancement in the sensitivity., Comment: 8 pages, 9 figures

Electrically driven emission from negatively charged silicon-vacancy, (SiV)- centres in single crystal diamond is demonstrated. The SiV centres were generated using ion implantation into an intrinsic (i) region of a p-i-n single crystal diamond diode. Both electroluminescence and the photoluminescence signals exhibit the typical emission that is attributed to the (SiV)- centres. Under forward and reversed biased PL measurements, no signal from the neutral (SiV)0 defect could be observed. The realization of electrically driven (SiV)- emission is promising for scalable nanophotonics devices employing colour centres in single crystal diamond.

Nitrogen-vacancy (NV) centers in diamond have attracted a great deal of attention because of their possible use in information processing and electromagnetic sensing technologies. We examined theatomistic generation mechanism for the NV defect aligned in the [111] direction of C(111) substrates. We found that N is incorporated in the C bilayers during the lateral growth arising from a sequence of kink propagation along the step edge down to [-1,-1,2]. As a result, the atomic configuration with the N-atom lone-pair pointing in the [111] direction is formed, which causes preferential alignment of NVs. Our model is consistent with recent experimental data for perfect NV alignment in C(111) substrates., Comment: 5 pages, 4 figures