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Anomalous local structure and magnetic moment of an inhomogeneous FeSe based superconductor indicating importance of the structure and magnetic correlations in these materials.

Occupational exposure of radiation workers, including nurses, is an important issue that should always be considered. However, there are limited reports on external exposure of nurses working in nuclear medicine investigated using a personal dosimeter with a trend function. We investigated the relationship between the personal dose equivalent and behavior of nurses in nuclear medicine using a personal dosimeter with a trend function. It was found that the external exposure of nurses was high when they cleaned hospital rooms where patients who received radiopharmaceutical drugs were admitted. However, none of the nurses surveyed exceeded 3μ. Visualization of the contamination in the hospital room showed that the area around the sink and trash can was particularly contaminated. Hence, nurses need to be more careful when cleaning. Although it is unlikely that the nurses surveyed will be affected by external exposure, data in this report is valuable for nurses at medical institutions to consider work hours and personnel strategies.

Using extremely low synthesis temperatures in molecular beam epitaxy (MBE) conditions on MgO(001), SrTiO3(001), and MgAl2O4(001), we find great differences in the crystallinity and magnetic propert...

Background Human epidermal growth factor 2 (HER2) is a potential driver oncogene. Although HER2-targeted precision therapy has been tested in non-small cell lung cancer (NSCLC), the demographic characteristics of HER2-positive NSCLC have not been systematically defined. Methods Patients with pathologically confirmed stage IIIB/IV or recurrent NSCLC, Eastern Cooperative Oncology Group performance status 0 to 2, were prospectively registered. HER2 immunohistochemistry (IHC) and fluorescence in situ hybridization (FISH) assays were performed to screen patients. HER2 mutations were identified by using direct gene sequencing. The aim of this study was to clarify the frequency, characteristics, and outcome of HER2-positive NSCLC. HER2 was defined as positive if the tumor harbored IHC3+, IHC2+/FISH+, or exon 20 insertion mutations. Results Of the 1,126 tumors screened, 34 (3.0%) were IHC3+, and 34 (3.0%) were IHC2+/FISH+. Among the 724 epidermal growth factor receptor wild-type tumors, 21 (2.9%) were HER2-mutant tumors, including A775-G776insYVMA (n = 15). Interestingly, the IHC3+ tumors and mutant tumors were entirely exclusive. Female patients had HER2-mutant tumors more frequently, whereas both IHC3+ and IHC2+/FISH+ tumors were detected more often in male subjects and smokers. Patients with an HER2-aberrant tumor had a significantly worse prognosis than those with epidermal growth factor receptor-positive and anaplastic lymphoma kinase-positive tumors, possibly due to the low proportion that received HER2-targeted therapies (n = 15 [26%]) and low response rates of 0% and 14% in patients with HER2-overexpressing and HER2-mutant tumors, respectively. Conclusions This prospective large-scale cohort study is the first to show comprehensively the frequency and clinical demographic characteristics of those with HER2-positive advanced lung tumors in detail, providing critical historical data for future drug development against HER2-positive NSCLC. Future treatment strategies would be developed stratified according to the types of HER2 aberrations. Trial Registry UMIN Registration No. 000017003; URL: https://upload.umin.ac.jp/cgi-open-bin/ctr_e/ctr_view.cgi?recptno=R000019691

The inverse Heusler alloy ${\mathrm{Mn}}_{2}\mathrm{CoAl}$ is known as a spin gapless semiconductor (SGS). It is believed that the positive linear magnetoresistance (PLMR) effect observed at low temperatures indicates the quantum linear MR effect in the gapless electronic band structures near the Fermi level, i.e., evidence of the realization of a SGS [Ouardi et al., Phys. Rev. Lett. 110, 100401 (2013)]. For this reason, one presumes that the observation of the PLMR effect is indirect proof of the demonstration of $XA$-type ${\mathrm{Mn}}_{2}\mathrm{CoAl}$ consisting of the inverse Heusler structure. In this paper, we observe the PLMR effect at 10 K in homogeneous and single-phase ${\mathrm{Mn}}_{2}\mathrm{CoAl}$ epitaxial films grown by low-temperature molecular beam epitaxy at $100{\phantom{\rule{0.16em}{0ex}}}^{\ensuremath{\circ}}\mathrm{C}$. From anomalous x-ray diffraction measurements and analyses, we clarify that the $100{\phantom{\rule{0.16em}{0ex}}}^{\ensuremath{\circ}}\mathrm{C}$-grown ${\mathrm{Mn}}_{2}\mathrm{CoAl}$ epitaxial film is not composed of the $XA$-type structure but a disordered $L{2}_{1}B$-type structure including some amount of Mn(A site) $\ensuremath{\Leftrightarrow}\mathrm{Co}$(C site) swapping and Mn(B site) $\ensuremath{\Leftrightarrow}\mathrm{Al}$(D site) swapping. On the basis of first-principles density-functional theory calculations, we discuss the correlation between the PLMR effect observed at 10 K and the possible electronic band structure in the disordered $L{2}_{1}B$-type ${\mathrm{Mn}}_{2}\mathrm{CoAl}$.

We study magnetic and magnetotransport properties of an epitaxial interfacial multiferroic system consisting of a ferromagnetic Heusler-alloy ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}$ and a ferroelectric-oxide $\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}$. $L{2}_{1}$-ordered ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}$ epilayers on $\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}(001)$ show an in-plane uniaxial magnetic anisotropy with strong temperature dependence, induced by the presence of the magnetoelastic effect via the spin-orbit interaction at the ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}/\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}(001)$ interface. In the ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}$ Hall-bar devices, the anisotropic magnetoresistance (AMR) hysteretic curves depending on in-plane magnetization reversal processes on the $a$ and $c$ domains of $\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}(001)$ are clearly observed at room temperature. Notably, the magnitude of the AMR ratio (%) for ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}$ Hall-bar devices can be tuned through the $a\ensuremath{-}c$ domain wall motion of $\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}(001)$ by applying electric fields. We propose that the tunable AMR effect is associated with the modulation of the spin-orbit interaction, exchange interaction, and/or the electronic band structure near the Fermi level by applying electric fields in the epitaxial ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}/\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}(001)$ interfacial multiferroic system.

We experimentally study the Mn substitution effect on thermoelectric properties in a full-Heusler alloy, ${\mathrm{Fe}}_{2}\mathrm{TiSi}$. By employing molecular beam epitaxy, homogeneous and $L{2}_{1}$-ordered ${\mathrm{Fe}}_{2}{\mathrm{Ti}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{Si}$ epilayers are achieved. The lattice constant, the saturation magnetic moment, and electrical resistivity are intentionally controlled with increasing Mn substitution. Notably, we find that the sign of the Seebeck coefficient is varied from positive to negative at around $x=0.2$. On the basis of the first-principles calculations, we qualitatively understand that the observed variation in the electrical and thermoelectric properties arises from the change in the electronic band structure near the Fermi level, dominated by Fe and Mn atoms in ${\mathrm{Fe}}_{2}{\mathrm{Ti}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{Si}$.

Background The incidence of grade 1 endometrioid carcinoma (EG1) at 2009 International Federation of Obstetrics and Gynecology (FIGO) stage IA was the highest in endometrial carcinoma. Several studies and guidelines classified EG1 into recurrent low risk and did not recommend patients received adjuvant therapy. However, not a few case with EG1 recurred. The aim of this study was to examine whether EG1 at 2009 FIGO stage IA with a less than 5% serous component resembling ovarian high- or low-grade serous carcinoma (SC) was a risk factor for recurrence or worse progression free survival (PFS). Methods Between 1990 and 2015, patients who received total abdominal hysterectomy and bilateral salpingo-oophorectomy for grade 1 endometrioid carcinoma at stage IA were enrolled at multiple centers. In addition to pathological review using 2014 World Health Organization (WHO) criteria, SC and several pathological features, including lympho-vascular invasion, were identified. A retrospective analysis to examine whether SC was a risk factor of recurrence was conducted. Results During the observational period, 236 patients were included in our study. Among them, SC was noted in 14 patients. Five patients showed recurrence and 4 of them had SC. Multivariate analysis for recurrence revealed that SC was an independent risk factor of recurrence (hazard ratio (HR) 139, p

We experimentally find that the substitution of Si for Al in Heusler-type ${\mathrm{Fe}}_{2}\mathrm{VAl}$ epilayers contributes to the significant reduction in the thermal conductivity, in which ${\mathrm{Fe}}_{2}\mathrm{VAl}$ is one of the next-generation thermoelectric materials without using toxic elements. Because of the low-temperature growth of the epilayers, the Si substitution induces the decrease in the degree of $L{2}_{1}$ ordering, giving rise to the formation of V-Si antisite defects in the epilayers. For ${\mathrm{Fe}}_{2}{\mathrm{VAl}}_{0.57}{\mathrm{Si}}_{0.43}$ epilayers, we can obtain a low thermal conductivity of $\ensuremath{\sim}3.9\phantom{\rule{0.16em}{0ex}}\mathrm{W}/(\mathrm{m}\phantom{\rule{0.16em}{0ex}}\mathrm{K})$, one-third less than Si-substituted ${\mathrm{Fe}}_{2}\mathrm{VAl}$ bulk samples [Lue et al., Phys. Rev. B 75, 064204 (2007)]. We discuss that a possible origin of the low thermal conductivity is related to the low lattice thermal conductivity due to the presence of the V-Si antisite defects.

M. Yamada, Y. Shiratsuchi, H. Kambe, K. Kudo, S. Yamada, K. Sawano, R. Nakatani, and K. Hamaya, Journal of Applied Physics 129, 183901 (2021); https://doi.org/10.1063/5.0048321., Using artificially controlled ferromagnet (FM)-semiconductor (SC) interfaces, we study the decay of the nonlocal spin signals with increasing temperature in SC-based lateral spin-valve devices. When more than five atomic layers of Fe are inserted at the FM/SC interfaces, the temperature-dependent spin injection/detection efficiency (P inj /det) can be interpreted in terms of the T3/2 law, meaning a model of the thermally excited spin waves in the FM electrodes. For the FM/SC interfaces with the insufficient insertion of Fe atomic layers, on the other hand, the decay of P inj /det is more rapid than the T3/2 curve. Using magneto-optical Kerr effect measurements, we find that more than five atomic layers of Fe inserted between FM and SC enable us to enhance the ferromagnetic nature of the FM/SC heterointerfaces. Thus, the ferromagnetism in the ultra-thin FM layer just on top of SC is strongly related to the temperature-dependent nonlocal spin transport in SC-based lateral spin-valve devices. We propose that the sufficient ferromagnetism near the FM/SC interface is essential for high-performance FM-SC hybrid devices above room temperature.

We report on the highest two-terminal magnetoresistance (MR) ratio at room temperature in semiconductor-based lateral spin-valve devices. From first-principles calculations, we predict energetically stable ferromagnet–semiconductor heterointerfaces consisting of Co2MnSi (CMS) and Ge(111) upon insertion of Fe atomic layers. Using low-temperature molecular beam epitaxy, we demonstrate L21-ordered CMS epilayers at 80 °C on Ge(111), where the CMS layer can be utilized as a spin injector and detector. Two-terminal MR ratios as high as 0.1% are achieved in n-Ge-based lateral spin-valve devices with CMS/Fe/Ge Schottky tunnel contacts annealed at 200 °C. This study will open a path for semiconductor-based spintronic devices with a large MR ratio at room temperature.

We experimentally show that half-metallic Co2MnSi films can be grown on SrTiO3(001) at around 350 °C by molecular beam epitaxy. Despite relatively low-temperature grown Co2MnSi films, L 2 1 -ordered structures, high saturation magnetic moments of ∼ 5.0 μ B /f.u., and the negative sign of the anisotropic magnetoresistance (AMR) indicating half-metallic nature are obtained. For the 350°C-grown Co2MnSi films, a low Gilbert damping constant of ∼ 0.0035, implying the high spin polarization, is evaluated. This study will open a way for developing novel spintronic applications consisting of Co2MnSi and perovskite oxides such as high-performance interfacial multiferroic systems and efficient spin-to-charge conversion systems.

We have measured anisotropic electrical resistivity of quasi-one-dimensional Ta2NiSe5 single crystals under pressure. While the in-plane anisotropy is almost pressure independent, the inter-plane one greatly decreases at P c ∼ 3 GPa accompanied by a pressure-induced semiconductor-semimetal transition. Nevertheless, a similar anomaly in the temperature dependence of in-plane anisotropy has been observed in each phase. This anomaly in the low-pressure phase below P c is regarded as an excitonic transition, and thus both of these anomalies are suppressed with increasing pressure. These results suggest that the suppression of the excitonic binding energy with pressure is caused by the increase of free carrier densities and the inter-plane conductivity.

Fe 2TiSi has been expected to be one of the high-performance thermoelectric full-Heusler alloys. Here, we experimentally clarify the room-temperature Seebeck coefficient ( S) and thermal conductivity ( κ) for the Fe 2TiSi films. Using a molecular beam epitaxy technique, we demonstrate the high degree of L 2 1-ordering and the homogeneous single-phase structure in the Fe 2TiSi films. We find that the intrinsic conduction carriers of the Fe 2TiSi films are holes and impurity-induced carrier scattering is indicated, derived from weak magnetic moments due to the presence of D 0 3-type (Fe ⇔ Ti) structural disorder in the Fe 2TiSi film. From reliable measurements for thin films, the values of S and κ are estimated to be 101 μV/K and 5.6 W/(m K), respectively, at room temperature. This study will open a new way for full-Heusler alloy thermoelectric materials other than those in Fe 2VAl systems.

The outcome of 55 children with severe aplastic anemia (SAA) who received a second hematopoietic stem cell transplantation (HSCT) was retrospectively analyzed using the registration data of the Japanese Society for Hematopoietic Cell Transplantation. The 5-year overall survival (OS) and failure-free survival (FFS) after the second transplantation were 82.9% (95% confidence interval (CI), 69.7-90.8)) and 81.2% (95% CI, 67.8-89.4), respectively. FFS was significantly better when the interval between the first and second transplantation was >60 days (88.9%; 95% CI, 73.0-95.7) than when it was ⩽60 days (61.4%; 95% CI, 33.3-80.5; P=0.026). All 12 patients who were conditioned with regimens containing fludarabine and melphalan were alive with hematopoietic recovery. These findings justify the recommendation of a second HSCT for children with SAA who have experienced graft failure after first HSCT.

The expression of cytokines mRNA, including Interleukin (IL)-2, IL-4 and Interferon (IFN)-γ and lymphocyte proliferation stimulated in vitro with either Escherichia coli (E. coli) or Staphylococcus aureus (S.A.) by Peripheral Blood Mononuclear Cells (PBMC) obtained from Holstein dairy cows were examined after the onset of ketosis or milk fever of field cases during the lactation period. The cows were used 50 to 150 days after calving in this study and divided into three groups; seventeen cows with milk fever (MF Group, 94.9±8.6 days after calving), ten cows with ketosis (Ketosis Group, 96.3±10.2 days after calving) and twenty-seven cows with no clinical diseases (Control Group, 89.4±5.4 days after calving). PBMC were stimulated in vitro by soluble antigen of E. coli or S.A. together with recombinant IL-2. The numbers of the peripheral blood T cells and monocyte were lower in the Ketosis Group in comparison with those in the Control Group and a significant difference was found in the number of CD3 + TcR1-N12 + T cells. There was a significantly lower lymphocyte proliferation stimulated with E. coli and S.A. in the Ketosis Group compared to that in the Control Group. Expression of IL-2, IL-4 and IFN-γ mRNA in PBMC stimulated with S.A. in the Ketosis Group was significantly lower than that in the Control Group, but these cytokine expression showed no group differences when PBMC were stimulated with E. coli. The present study demonstrated the onset of ketosis during the lactation period decreases reactivity of PBMC at least when they were stimulated with S.A in vitro.

We investigated the magnetism and superconductivity in as-sintered (AS) and oxidation annealed (OA) T*-type La1−x/2Eu1−x/2SrxCuO4 (LESCO) with 0.14 ≤ x ≤ 0.28 by the first comprehensive muon spin r...

Grinding fluid & cutting oil are contained various chemicals. Waste fluid treatment causes huge disposal cost and heavy environmental load. This investigation proposes the electric rust preventive machining method system that water is used as machining fluid. However, there are various problems for this practical use. In this paper, using and re-using of machining water are considered. Water quality is different in various foreign regions for containing impurity ingredient varying with each area. Correspond to water difference, water purification and deionization is examined in developed machining water refine recycle system experimentally. Synthesized water that is likened to hard water is composed from refined water (pure water which is made by water recycle system). And, it is confirmed that synthesized water is refined to deionize by water recycle system. Moreover, 12.25L/min refined water is achieved. In addition, it is indicated that electric rust prevention is possible by refined water at least 1hour. However, high voltage and device twist is necessary.

We study the electrical properties of pseudo-single-crystalline Ge (PSC-Ge) films grown by a Au-induced layer exchange crystallization method at 250 °C. By inserting the SiNx layer between PSC-Ge and SiO2, we initiatively suppress the influence of the Ge/SiO2 interfacial defective layers, which have been reported in our previous works, on the electrical properties of the PSC-Ge layers. As a result, we can detect the influence of the ionized Au+ donors on the temperature-dependent hole concentration and Hall mobility. To further examine their electrical properties in detail, we also fabricate p-thin-film transistors (TFTs) with the PSC-Ge layer. Although the off-state leakage currents are suppressed by inserting the SiNx layer, the value of on/off ratio remains poor (

We study the effect of Fe–V nonstoichiometry on electrical and thermoelectric properties of Fe2VAl films. We find that temperature dependence of electrical resistivity and carrier type for Fe2− x V1+ x Al films are similar to those for bulk samples reported previously. In addition, the electrical and thermoelectric properties can be modulated by varying x. These results indicate that the electronic band structure having a pseudo gap at around the Fermi level is demonstrated even in thin-film Fe2VAl samples. This study will lead to further improvement in thermoelectric properties of the thin-film Fe2VAl.

We propose a widely tunable and low insertion loss loop filter incorporating two ring resonators and an asymmetric Mach-Zehnder interferometer. A semiconductor optical amplifier, phase control section, and loop filter are monolithically integrated on one chip in the InP-InGaAsP material system. The tuning range of 39 nm with side-mode suppression ratio of over 30 dB was demonstrated. The maximum of the total heater power over the tuning range was 84 mW.

A gap-mirror technology for integrating a functional section onto a laser gain chip is presented. A semiconductor optical amplifier, implementing several functions, is integrated on the gain chip used in an external cavity laser, and demonstrated as a high-performance variable attenuator and data modulator at 2.5 Gb/s. Control of the mirror properties through the gap geometry is demonstrated, and further optimization is realized by a gap-filling technique, which increases the output power to above 100 mW across the C -band.

Anesthesia profoundly impacts peri-infarct depolarizations (PIDs), but only one prior report has described their monitoring during experimental stroke in awake animals. Since temporal patterns of PID occurrence are model specific, the current study examined PID incidence during focal ischemia in the awake Spontaneously Hypertensive Rat (SHR), and documented the impact of both prior and concurrent isoflurane anesthesia. For awake recordings, electrodes were implanted under isoflurane anesthesia 1 day to 5 weeks prior to occlusion surgery. Rats were then subjected to permanent or transient (2 hour) tandem occlusion of the middle cerebral and ipsilateral common carotid arteries, followed by PID monitoring for up to 3 days. Comparison perfusion imaging studies evaluated PID-associated hyperemic transients during permanent ischemia under anesthesia at varied intervals following prior isoflurane exposure. Prior anesthesia attenuated PID number at intervals up to 1 week, establishing 2 weeks as a practical recovery duration following surgical preparation to avoid isoflurane preconditioning effects. PIDs in awake SHR were limited to the first 4 hours after permanent occlusions. Maintaining anesthesia during this interval reduced PID number, and prolonged their occurrence through several hours following anesthesia termination. Although PID number otherwise correlated with infarct size, PID suppression by anesthesia was not protective in the absence of reperfusion. PIDs persisted up to 36 hours after transient occlusions. These results differ markedly from the one previous report of such monitoring in awake Sprague-Dawley rats, which found an extended biphasic PID time course during 24 hours after both permanent and transient filament occlusions. PID occurrence closely reflects the time course of infarct progression in the respective models, and may be more useful than absolute PID number as an index of ongoing pathology.

A theoretical and experimental study of the wavelength channel accuracy of an external cavity wavelength tunable laser (ECTL) with a wavelength reference etalon inside the laser cavity is presented. A feedback control scheme for wavelength locking is proposed based on monitoring of the forward output power. The cavity parameters with an impact on the channel accuracy, using the proposed scheme, are indicated, and guidelines toward optimization of the etalon are proposed. Experimental demonstration of a channel accuracy of less than 0.6 GHz for a full C-band ECTL with a channel spacing of 50 GHz confirms the high potential of this laser configuration

We have applied an ultrashort-pulse reflectometer (USRM) to an inductively coupled plasma for density profile measurement along with a plasma absorption probe (PAP). It is found that the density in the edge plasma region measured by USRM is in good agreement with that by PAP, however, the measured density in core region shows large discrepancy between two methods. This difference is considered to occur due to difference of optical path route within utilized frequency band. We have rearranged experimental setup to avoid this improper situation, and confirmed that the density in core region measured by both methods is becoming in good agreement.

We report the 1000 mW single mode operation of a planar blue-violet laser diode with inner stripe waveguide. Kink-free output surpassed 400 mW (CW) and 600 mW (50 ns pulsed, duty 50%) at temperatures up to 90 °C. Precise optical field design for narrow stripe waveguide as well as damage-free stripe formation was a key to achieving watt class output. By utilizing buried AlN as optical and current confinement layers, a damage-free inner stripe as narrow as 1.0 μm wide was successfully fabricated. Planar inner stripe structure also has the advantage of a small increase in the electrical resistance for such a narrow stripe, which is favorable for high power operations. The results here indicate the potential of this planar blue-violet laser diode for high power applications as the next generation of optical disc systems.