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Perovskites have showed significant potential for the application in photodetectors due to their outstanding electrical and optical properties. Integrating two-dimensional (2D) materials with perovskites can make full use of the high carrier mobility of 2D materials and strong light absorption of perovskite to realize excellent optoelectrical properties. Here, we demonstrate a photodetector based on the WTe2/CsPbI3 heterostructure. The quenching and the shortened lifetime of photoluminescence (PL) for CsPbI3 perovskite confirms the efficient charge transfer at the WTe2/CsPbI3 heterojunction. After coupled with WTe2, the photoresponsivity of the CsPbI3 photodetector is improved by almost two orders of magnitude due to the high-gain photogating effect. The WTe2/CsPbI3 heterojunction photodetector reveals a large responsivity of 1157 A W−1 and a high detectivity of 2.1 × 1013 Jones. The results pave the way for the development of high-performance optoelectronic devices based on 2D materials/perovskite heterojunctions. [ABSTRACT FROM AUTHOR]

GaSb nanowires integrated on a silicon-based substrate are of great significance for p-type field-effect transistors. In particular, chips are becoming more and more miniaturized, and complicated dielectric engineering needs to be avoided. Therefore, the introduction of junction field-effect transistor (JFET) can be used to improve the performance of transistors. We demonstrated a heterostructure p-channel depletion type GaSb junction field-effect transistor by combining with n-WS2 sheets. Typical diode characteristics are observed in n-WS2/p-GaSb heterostructure diodes, with a high rectification ratio of ∼104. The JFET has excellent electrical features with an ON/OFF ratio of ∼104 and the sub-threshold swing (SS ≈ 723 mV dec−1). With the back gate control the ON/OFF current ratio is improved to ∼106 and the low SS is restrained to 166 mV dec−1. Moreover, due to the electrical properties of the heterojunction the JFET and p–n diodes maintain good stability at high temperatures. Therefore, the WS2/GaSb heterojunction enables the miniaturization of an integrated power electronic system and provides a promising route to low power electronics. [ABSTRACT FROM AUTHOR]

Perovskites have showed significant potential for the application in photodetectors due to their outstanding electrical and optical properties. Integrating two-dimensional (2D) materials with perovskites can make full use of the high carrier mobility of 2D materials and strong light absorption of perovskite to realize excellent optoelectrical properties. Here, we demonstrate a photodetector based on the WTe 2 /CsPbI 3 heterostructure. The quenching and the shortened lifetime of photoluminescence (PL) for CsPbI 3 perovskite confirms the efficient charge transfer at the WTe 2 /CsPbI 3 heterojunction. After coupled with WTe 2 , the photoresponsivity of the CsPbI 3 photodetector is improved by almost two orders of magnitude due to the high-gain photogating effect. The WTe 2 /CsPbI 3 heterojunction photodetector reveals a large responsivity of 1157 A W -1 and a high detectivity of 2.1 × 10 13 Jones. The results pave the way for the development of high-performance optoelectronic devices based on 2D materials/perovskite heterojunctions., (© 2023 IOP Publishing Ltd.)