Author: "Hilliard D" / Publication Year Range: Last 50 years - Searchworks@Jio Institute Digital Library Search Results

113 results on '"Hilliard D"'

1. At the limit of interfacial sharpness in nanowire axial heterostructures

Author: Hilliard, D., Tauchnitz, T., (0000-0002-5200-6928) Hübner, R., Vasileiadis, I., Gkotinakos, A., Dimitrakopulos, G. P., Komninou, P., Sun, X., (0000-0002-8090-9198) Winnerl, S., (0000-0002-8060-8504) Schneider, H., Helm, M., (0000-0002-7546-0621) Dimakis, E., Hilliard, D., Tauchnitz, T., (0000-0002-5200-6928) Hübner, R., Vasileiadis, I., Gkotinakos, A., Dimitrakopulos, G. P., Komninou, P., Sun, X., (0000-0002-8090-9198) Winnerl, S., (0000-0002-8060-8504) Schneider, H., Helm, M., and (0000-0002-7546-0621) Dimakis, E.
Abstract: As semiconductor devices approach dimensions at the atomic scale, controlling the compositional grading across hetero-interfaces becomes paramount. Particularly in nanowire axial heterostructures, which are promising for a broad spectrum of nanotechnology applications, the achievement of sharp hetero-interfaces has been challenging owing to peculiarities of the commonly used vapor-liquid-solid growth mode. Here, the grading of Al across GaAs/AlxGa1-xAs/GaAs heterostructures in self-catalyzed nanowires is studied, aiming at finding the limits of the interfacial sharpness for this technologically versatile material system. A pulsed growth mode ensures precise control of the growth mechanisms even at low temperatures, while a semi-empirical thermodynamic model is derived to fit the experimental Al-content profiles and quantitatively describe the dependences of the interfacial sharpness on the growth temperature, the nanowire radius, and the Al content. Finally, symmetrical Al profiles with interfacial widths of 2–3 atomic planes, at the limit of the measurement accuracy, are obtained, outperforming even equivalent thin-film heterostructures. The proposed method paves the way to advanced heterostructure schemes and a better exploitation of the nanowire platform; moreover, it is also considered expandable to other material systems and nanostructure types.
Published: 2024

2. Transient nanowire bending during the growth of core/shell heterostructures with large lattice mismatch

Author: Hilliard, D., (0000-0002-5200-6928) Hübner, R., Chatzopoulou, P., Dimitrakopulos, G., Komninou, P., (0000-0002-8090-9198) Winnerl, S., Helm, M., (0000-0002-7546-0621) Dimakis, E., Hilliard, D., (0000-0002-5200-6928) Hübner, R., Chatzopoulou, P., Dimitrakopulos, G., Komninou, P., (0000-0002-8090-9198) Winnerl, S., Helm, M., and (0000-0002-7546-0621) Dimakis, E.
Abstract: The elastic accommodation of lattice mismatch in core/shell nanowires presents unique features because both the shell and the core can be strained depending on their volume ratio. This allows the realization of heterostructure combinations with large lattice mismatch, as well as the extensive strain-mediated tailoring of their electronic properties [1]. Owing to the large stresses involved, any shell thickness asymmetry around the core may cause the bending of the nanowires, forming shapes like circular arcs, which can be a desired effect or not, depending on the targeted application. Here, we monitor the asymmetric shell growth, the asymmetric strain, and the resulting bending during the growth of GaAs/In0.4Al0.6As core/shell nanowires [2]. We show how the profile of the elemental beams in a conventional MBE system accounts for the asymmetric growth rate of the shell around the core, in spite of the substrate rotation during growth. The resulting asymmetric stresses around the core cause the bending of the nanowires to the side of the thinner shell, which, in turn, enhances further the growth rate and stress asymmetry, and thus the bending itself, in a self-feeding circle. Nevertheless, after a critical minimum shell thickness on all core sides has been reached, the bending is reversed and the nanowires straighten up. Analyzing cross sections normal to the axis of such straightened up nanowires by STEM, we developed a method to reconstruct, for the first time, the evolution of the shell thickness on every core side and the corresponding bending angle during growth. Furthermore, geometric phase analysis revealed the spatial distribution of strain in the core and the shell with respect to the uneven shell thicknesses around the core. Our results shine a light on the growth of lattice-mismatched core/shell nanowires and could serve as a guide to design deliberate curved structures or, instead, strategies to suppress the bending. Figure 1. (a) Side-view SEM image of as
Published: 2023

3. Nanoscale 3D Strain Mapping and Structural Features of GaAs/In(Al,Ga)As Core-Shell Nanowires

Author: Chatzopoulou, P., Hilliard, D., Vasileiadis, I. G., Florini, N., Devulapalli, V., Liebscher, C. H., Lymperakis, L., Komninou, P., (0000-0002-7546-0621) Dimakis, E., Dimitrakopulos, G. P., Chatzopoulou, P., Hilliard, D., Vasileiadis, I. G., Florini, N., Devulapalli, V., Liebscher, C. H., Lymperakis, L., Komninou, P., (0000-0002-7546-0621) Dimakis, E., and Dimitrakopulos, G. P.
Abstract: Elastic accommodation of the high lattice mismatch in GaAs/In(Al,Ga)As core-shell nanowires holds great potential for applications in high-frequency electronics and optoelectronics. The unique core-shell geometry offers several advantages over planar systems. The reduced dimensionality of the core enables strain relaxation along the lateral dimension and strain partitioning, ultimately reducing the overall strain energy and expanding the limits of coherency [1]. Consequently, the GaAs core can undergo extreme elastic stretching, particularly along the nanowire axis, without the onset of plastic relaxation. Growing thick Inx(Al,Ga)1-xAs shells with high In-contents on narrow [111]-oriented GaAs cores leads to extreme elastic dilatation of the core that promotes a 40% bandgap reduction [2] as well as a 30-50% boost in electron mobility [3]. In order to elucidate the intricate 3D strain fields of such nanowires, we have employed transmission and scanning-transmission electron microscopy ((S)TEM) methods to study a series of nanowires featuring narrow cores (25 nm diameter) and thick shells (80 nm thickness) with composition x ranging from 0.20 up to 1. To enable the nanoscale investigation of all strain components, we developed elaborate sample preparation methods to facilitate observation along three zone axes, i.e. [111], <1-10> and <11-2>, as shown in Fig.1. For (S)TEM and high-resolution TEM (HRTEM) observations, a 200 kV JEOL JEM F200 CFEG microscope was used. High resolution STEM (HRSTEM) was performed in a 300 kV probe-corrected Thermo Fisher Scientific Titan Themis 60/300 microscope. In an integrated approach, experimental strain fields were compared with finite element (FE) calculations, performed using thermal expansivity to model the lattice mismatch, and with energetic calculations by molecular dynamics (MD) using the Tersoff interatomic potential [4]. (S)TEM observations revealed that for indium contents up to x≈50%, the shells were coherent and dislocatio
Published: 2023

4. Axial heterostructures in vapor-liquid-solid grown nanowires: at the limit of interface sharpness

Author: Hilliard, D., Tauchnitz, T., (0000-0002-5200-6928) Hübner, R., Vasileiadis, I., Dimitrakopulos, G., Komninou, P., (0000-0002-8090-9198) Winnerl, S., (0000-0002-8060-8504) Schneider, H., Helm, M., (0000-0002-7546-0621) Dimakis, E., Hilliard, D., Tauchnitz, T., (0000-0002-5200-6928) Hübner, R., Vasileiadis, I., Dimitrakopulos, G., Komninou, P., (0000-0002-8090-9198) Winnerl, S., (0000-0002-8060-8504) Schneider, H., Helm, M., and (0000-0002-7546-0621) Dimakis, E.
Abstract: When lowering the dimensions of semiconductor heterostructures, controlled compositional changes become paramount owing to the increasing role of the heterointerfaces in the electronic properties of the heterostructures. A common issue faced in fabricating axial heterostructures in vapor-liquid-solid (VLS)-grown nanowires is the compositional grading, which is caused by the involved growth mechanisms and broadens the interfaces. Here, our previously developed nanowire growth technique called droplet-confined alternate pulsed-epitaxy (DCAPE) [1] (an adaptation of conventional molecular beam epitaxy), which grants precise control over the axial growth rate and droplet composition, is employed to grow AlxGa1-xAs axial insertions in self-catalyzed GaAs nanowires. Some examples showcasing the capability of DCAPE in growing systems of complex, abrupt heterostructures are shown in Fig. 1a, where AlxGa1-xAs is revealed as horizontal dark grey lines. High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and a semi-empirical growth model [2] are utilized to gain an understanding of the compositional grading mechanism and its dependence on the growth temperature (TG), the nanowire radius (RNW), and the total Al content [2]. We show that pre-filling the Ga droplet with Al before the growth of an insertion is enough to sharpen the GaAs-to-AlxGa1-xAs interface at any TG. On the other hand, though, sharper AlxGa1-xAs-to-GaAs interfaces are obtained only at lower TG and/or smaller RNW, where the so-called reservoir effect is markedly reduced. In the best case, symmetric AlxGa1-xAs insertions with interface widths of only 2– 3 monolayers (comparable to, or better than, state-of-the-art thin film heterostructures) are achieved for the full range of x (Fig. 1b), proving the strength of VLS in the fabrication of sharp axial heterostructures. Figure 1: (a) HAADF-STEM images with 5 examples of GaAs/AlxGa1-xAs heterostructures grown in self-catalyzed GaAs na
Published: 2023

5. Towards GaAs/AlxGa1-xAs axial heterostructures with atomically sharp interfaces in self-catalyzed nanowires

Author: Hilliard, D., Tauchnitz, T., (0000-0002-5200-6928) Hübner, R., Vasileiadis, I., Dimitrakopulos, G., Komninou, P., (0000-0002-8090-9198) Winnerl, S., Helm, M., (0000-0002-7546-0621) Dimakis, E., Hilliard, D., Tauchnitz, T., (0000-0002-5200-6928) Hübner, R., Vasileiadis, I., Dimitrakopulos, G., Komninou, P., (0000-0002-8090-9198) Winnerl, S., Helm, M., and (0000-0002-7546-0621) Dimakis, E.
Abstract: Axial heterostructures have diverse functionality in electronic and optoelectronic devices. Implementing such systems in freestanding semiconducting nanowires further broadens the scope of potential applications, for example: distributed Bragg reflectors, high-efficiency light-emitting diodes, and quantum dot heterostructures. Although, as the physical dimensions of such devices approach the atomic scale, managing the compositional grading effect of the constituent materials at the heterointerface becomes critical and can be particularly challenging in nanowires grown in vapor-liquid-solid mode. We grow self-catalyzed GaAs nanowires with AlxGa1-xAs axial insertions on Si substrates using our previously developed nanowire growth technique called droplet-confined alternate pulsed-epitaxy (DCAPE) [1]. Here, nanowires are grown using alternating short beam pulses as opposed to the conventional molecular beam epitaxy analog where material is continuously supplied. With this approach, precise control over the axial growth rate, droplet composition and contact angle is granted along with the unique opportunity to grow nanowire heterostructures at CMOS compatible temperatures. To examine the compositional grading mechanism of Al in our AlxGa1-xAs axial insertions we employ high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Quantitative AlxGa1-xAs profiles are extracted from atomically resolved images to study in detail the profile’s interface sharpness and symmetry in relation to the profiles total Al content, heterostructure growth temperature and nanowire diameter. Additionally, building on a previously existing heterostructure growth model that describes the AlxGa1-xAs-to-GaAs interface while considering the solid-liquid thermodynamics and the so-called reservoir effect [2], we derive our own semi-empirical model that describes remarkably well the AlxGa1-xAs profile as a whole and allows for a rigorous analysis of both the profile’s lea
Published: 2023

6. III-V semiconductor nanowires with unique heterostructure possibilities

Author: Hilliard, D., (0000-0001-7125-7223) Balaghi, L., Tauchnitz, T., (0000-0002-5200-6928) Hübner, R., (0000-0002-7762-1249) Fotev, I., (0000-0002-9691-467X) Rana, R., (0000-0003-1309-6171) Pashkin, O., Vasileiadis, I., Chatzopoulou, P., Florini, N., Dimitrakopulos, G. P., Komninou, P., (0000-0002-8090-9198) Winnerl, S., (0000-0002-8060-8504) Schneider, H., Helm, M., (0000-0002-7546-0621) Dimakis, E., Hilliard, D., (0000-0001-7125-7223) Balaghi, L., Tauchnitz, T., (0000-0002-5200-6928) Hübner, R., (0000-0002-7762-1249) Fotev, I., (0000-0002-9691-467X) Rana, R., (0000-0003-1309-6171) Pashkin, O., Vasileiadis, I., Chatzopoulou, P., Florini, N., Dimitrakopulos, G. P., Komninou, P., (0000-0002-8090-9198) Winnerl, S., (0000-0002-8060-8504) Schneider, H., Helm, M., and (0000-0002-7546-0621) Dimakis, E.
Abstract: III-V semiconductor heterostructures have contributed to a wealth of studies in solid state physics, as well as to applied research and technology in electronics and photonics. More recently, the nanowire geometry introduced new possibilities, such as one-dimensional quantum transport, formation of Majorana modes, enhanced light-matter coupling, photon entanglement, as well as monolithic integration in Si-CMOS platforms for the realization of more-than-Moore hybrid systems. This talk will be focusing on the bottom-up fabrication and the structural and electronic properties of III-As nanowire heterostructures. The first type of heterostructures will be radial ones, comprising a GaAs core and a lattice-mismatched InxAl1-xAs or InxGa1-xAs shell. Molecular beam epitaxy and a combination of vapor-liquid-solid and vapor-solid growth modes are employed to grow free-standing nanowires on Si substrates [1, 2]. Owing to its high surface-to-volume ratio and the peculiar geometry, the thin core can be hydrostatically tensile strained to extremely high levels, depending on the In content x and the thickness of the shell. As a welcome effect, the bandgap of GaAs can be tuned to be anywhere between the strain-free value of 1.4 and 0.8 eV, allowing for potential applications in telecom photonics [3]. Furthermore, the electron mobility in the GaAs core is increased with increasing the tensile strain, as a result of a corresponding decrease in electron effective mass [4]. This is of major importance for the realization of transistors with high speed and low-power consumption. The second type of heterostructures will be axial ones, where the composition is modulated from GaAs to AlxGa1-x¬As and back to GaAs along the nanowire axis. Here, we develop a pulsed-growth technique [5], which grants precise control over the axial growth rate and droplet composition. Using advanced transmission electron microscopy methods and a thermodynamic equilibrium model, it becomes possible to quantitati
Published: 2023

7. Unlocking the potential of GaAs nanowires for telecom photonics

Author: Sun, X., Hilliard, D., Chatzopoulou, P., Vasileiadis, I., Florini, N., Dimitrakopulos, G., Komninou, P., Lymperakis, L., Devulapalli, V., Liebscher, C., (0000-0003-1309-6171) Pashkin, O., (0000-0002-8090-9198) Winnerl, S., Helm, M., (0000-0002-7546-0621) Dimakis, E., Sun, X., Hilliard, D., Chatzopoulou, P., Vasileiadis, I., Florini, N., Dimitrakopulos, G., Komninou, P., Lymperakis, L., Devulapalli, V., Liebscher, C., (0000-0003-1309-6171) Pashkin, O., (0000-0002-8090-9198) Winnerl, S., Helm, M., and (0000-0002-7546-0621) Dimakis, E.
Abstract: Strain engineering is a powerful tool for designing nanowires with tailored properties for a variety of applications. By carefully controlling the built-in strain in nanowires, it is possible to tune their bandgap to the near-infrared region, making them ideal for applications in telecommunication and imaging. In our previous work, we demonstrated that in GaAs/In x Al 1-x As core/shell nanowires, the bandgap of the core can be narrowed by up to 40%, for x up to 0.54, via strain due to the lattice mismatch between the shell [1]. Here, we explored the upper end of the lattice mismatch regime, extending the same concept to the contents of the shell towards x = 1, achieving unusually high strain values. The strain in the core and its effect on band structure are studied by a combination of spectroscopic methods and high-resolution transmission and scanning-transmission electron microscopy (HR(S)TEM). Raman spectroscopy showed that the tensile strain in the GaAs core increased linearly with increasing the In content in the shell (Fig. 1a), following the trend we reported in the past for lower values of x [1]. This behavior suggests the absence of plastic relaxation despite the very large lattice mismatch between the core and the shell. Using cross-sectional and longitudinal HR(S)TEM observations, we assessed the strain distribution normal and along the nanowire axis (Figs. 1b to 1d), which was found to be in good agreement with finite element and molecular dynamics simulations. Above a critical x value, plastic relaxation sets in via dislocations (Fig. 1b). We also correlated the photoluminescence emission properties with the strain distribution in the core and the shell, and the corresponding band alignment via band structure simulations. All in all, our results identified the limits of a coherent core and shell heterostructures and the potential application of tensile-strained GaAs nanowires for C- and O-band telecom photonics.
Published: 2023

8. Enhancing the interface sharpness of axial heterostructures in self-catalyzed nanowires

Author: Hilliard, D., Tauchnitz, T., (0000-0002-5200-6928) Hübner, R., (0000-0002-8060-8504) Schneider, H., Helm, M., (0000-0002-7546-0621) Dimakis, E., Hilliard, D., Tauchnitz, T., (0000-0002-5200-6928) Hübner, R., (0000-0002-8060-8504) Schneider, H., Helm, M., and (0000-0002-7546-0621) Dimakis, E.
Abstract: Axial heterostructures have diverse functionality in electronic and optoelectronic devices. Implementing such systems in freestanding semiconducting nanowires further broadens the scope of potential applications, for example: distributed Bragg reflectors, high-efficiency light-emitting diodes, and quantum dot heterostructures. The challenge, however, lies in reducing the compositional grading effect of the constituent heterostructure materials across the interfaces in nanowires grown in vapor-liquid-solid mode. Here, our previously developed nanowire growth technique called droplet-confined alternate pulsed-epitaxy [1] (an adaptation of conventional molecular beam epitaxy), which grants precise control over the axial growth rate and droplet composition, is employed to grow Al(x)Ga(1-x)As axial insertions in self-catalyzed GaAs nanowires. High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and nanowire growth models are utilized to gain an understanding of the compositional grading mechanism and its dependence on the growth temperature (TG), the nanowire radius (RNW), and the amount of supplied Al. Figure 1 (a) is an example HAADF-STEM image showing two Al(x)Ga(1-x)As insertions embedded in a zincblende GaAs nanowire, whereas Figure 1 (b) shows the extracted Al-content (x) axial profiles for three selected insertions with different TG and RNW (the same amount of supplied Al). We show that lower TG and/or smaller RNW result in sharper interfaces, with a more profound improvement for the AlxGa1-xAs-to-GaAs interface. In the best case, almost symmetric insertions with interface thicknesses of only 2 – 3 monolayers are achieved, approaching the absolute limit of atomically sharp interfaces. The fitting of our experimental data with existing heterostructure growth models [2, 3] is suggestive of different mechanisms behind the compositional grading of the two interfaces and will be discussed in detail. The functionality of our insertions is
Published: 2022

9. Towards axial heterostructures with atomically-sharp interfaces in self-catalyzed nanowires

Author: Hilliard, D., Tauchnitz, T., (0000-0002-5200-6928) Hübner, R., (0000-0002-8060-8504) Schneider, H., Helm, M., (0000-0002-7546-0621) Dimakis, E., Hilliard, D., Tauchnitz, T., (0000-0002-5200-6928) Hübner, R., (0000-0002-8060-8504) Schneider, H., Helm, M., and (0000-0002-7546-0621) Dimakis, E.
Abstract: Axial heterostructures have diverse functionality in electronic and optoelectronic devices. Implementing such systems in freestanding semiconducting nanowires further broadens the scope of potential applications, for example: distributed Bragg reflectors, high-efficiency light-emitting diodes, and quantum dot heterostructures. The challenge, however, lies in reducing the compositional grading effect of the constituent heterostructure materials across the interfaces in nanowires grown in vapor-liquid-solid mode. Here, our previously developed nanowire growth technique called droplet-confined alternate pulsed-epitaxy [1] (an adaptation of conventional molecular beam epitaxy), which grants precise control over the axial growth rate and droplet composition, is employed to grow Al(x)Ga(1-x)As axial insertions in self-catalyzed GaAs nanowires. A full nanowire with six insertions is shown in Figure 1 (top). High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and nanowire growth models are utilized to gain an understanding of the compositional grading mechanism and its dependence on the growth temperature (TG), the nanowire radius (RNW), and the amount of supplied Al. Figure 1 (bottom) is an example HAADF-STEM image showing two atomically resolved Al(x)Ga(1-x)As insertions embedded in a zincblende GaAs nanowire, whereas Figure 2 shows the extracted Al-content (x) axial profiles for three selected insertions with different TG and RNW (the same amount of supplied Al). We show that lower TG and/or smaller RNW result in sharper interfaces, with a more profound improvement for the AlxGa1-xAs-to-GaAs interface. In the best case, almost symmetric insertions with interface thicknesses of only 2 – 3 monolayers are achieved, approaching the absolute limit of atomically sharp interfaces. Thermodynamics, kinetics, and nanowire geometry are all factors considered during the formation of our Al(x)Ga(1-x)As insertions. Using two existing heterostructure gr
Published: 2022

10. Complex quantum dots in III-As nanowires

Author: Hilliard, D., Tauchnitz, T., Hübner, R., Schneider, H., Helm, M., and Dimakis, E.
Subjects: Nanowire, Condensed Matter::Materials Science, Quantum dot, Interface, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Superlattice, Strain
Abstract: Single quantum dots embedded in the core of freestanding semiconductor nanowires grown directly on Si offer a novel and promising scheme for the realization of on-demand sources of single photons or entangled photon pairs in quantum technology systems. Here, we have investigated the growth mechanism and optical properties of axial quantum dots embedded in GaAs nanowires grown in self-catalyzed vapor-liquid-solid mode while demonstrating the tuneabilty of their emission energy across a wide range of wavelengths with the potential for telecom band access. We have incorporated GaAs complex quantum dots inside GaAs/In(x)Al(1-x)As and GaAs/Al(x)Ga(1-x)As core/shell nanowires grown via our nanowire growth technique called droplet-confined alternate pulsed-epitaxy (DCAPE)[1] (an adaptation of conventional molecular beam epitaxy (MBE)), which grants precise control over the axial growth rate and droplet composition. Using a combination of conventional MBE and DCAPE the growth of highly symmetrical quantum dots, as little as 10 nm in diameter and just a few nanometers in height, were made possible. Strong axial confinement was achieved in the form of a double axial heterostructure by incorporating two Al(x)Ga(1-x)As/Al(y)Ga(1-y)As short-period superlattices separated by a thin GaAs segment (figure 1(a)). The complexity of our quantum dots is derived from the unique possibility of using different ternary alloys for the axial and radial confinement. By introducing a latticed mismatched ternary alloy shell as the radial barrier (In(x)Al(1-x)As), we demonstrated controlled hydrostatic strain induced redshifts of the highly polarized quantum dot emission energy by adjusting the In content of the shell. For 39% In we measured a redshift in the quantum dot emission of 320 meV, from an unstrained quantum dot reference (Al(x)Ga(1-x)As shell), as shown by the photoluminescence measurements in figure 1 (b). To optimize the emission quality, the compositional grading effect of the constituent superlattice materials across the interfaces must be addressed. High-angle annular dark-field scanning transmission electron microscopy, energy-dispersive X-ray spectroscopy, and nanowire growth models were utilized to gain an understanding of the compositional grading mechanism at the quantum dot/superlattice interface. We found that interfacial sharpness increases significantly by reducing the superlattice growth temperature and nanowire radius. Notwithstanding, limitations in what can be achieved ensue and possible strategies to overcome them will be presented. [1] Balaghi et al., Nano Lett. 16, 4032 (2016)
Published: 2021

11. Al(x)Ga(1-x)As /Al(y)Ga(1-y)As axial short-period superlattices in self-catalyzed nanowires

Author: Hilliard, D., Tauchnitz, T., Hübner, R., Schneider, H., Helm, M., and Dimakis, E.
Subjects: Nanowire, Condensed Matter::Materials Science, Quantum dot, Interface, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Superlattice, Strain
Abstract: Shrt abstract: Using our nanowire growth technique called droplet-confined alternate pulsed-epitaxy, which provides precise control over the axial growth rate and droplet composition, the growth mechanism of self-catalyzed GaAs epitaxial nanowires containing AlxGa1-xAs/AlyGa1-yAs axial short-period superlattices, was systematically examined. Significant increases in interfacial abruptness were confirmed by reducing the nanowire diameter and superlattice growth temperature. Additionally, we found that an unstable droplet contact angle impacts the superlattice growth rate considerably. The unique versatility of our short-period superlattices was tested by using them as axial barriers for GaAs quantum dot heterostructures embedded in nanowires. Furthermore, encapsulating the nanowire in lattice-mismatched shells operating as radial barriers, we demonstrated the tuneabilty of the quantum dot emission energy via strain engineering. Long abstract Short-period superlattices have diverse functionality in electronic and optoelectronic devices. Implementing such systems as axial heterostructures in freestanding semiconducting nanowires further broadens the scope of potential applications, for example: distributed Bragg reflectors, high-efficiency light-emitting diodes, and quantum dot heterostructures. The challenge, however, lies in reducing the compositional grading effect of the constituent superlattice materials across the interfaces in nanowires grown in self-catalyzed vapor-liquid-solid mode. Here, our previously developed nanowire growth technique called droplet-confined alternate pulsed-epitaxy[1] (an adaptation of conventional molecular beam epitaxy), which grants precise control over the axial growth rate and droplet composition, was employed to grow Al(x)Ga(1-x)As/Al(y)Ga(1-y)As axial superlattices in self-catalyzed GaAs nanowires with diameters as thin as 20 nm. High-angle annular dark-field scanning transmission electron microscopy (figure 1(a)), energy-dispersive X-ray spectroscopy, and growth models were utilized to gain an understanding of the compositional grading mechanism. By varying several growth parameters involving growth temperature, nanowire diameter, and droplet contact angle, the link between them and the superlattice characteristics was explored. We found that interfacial abruptness increases significantly by reducing the superlattice growth temperature and nanowire radius. Moreover, we studied the impact of an unstable contact angle on the superlattice growth rate, showing good agreement with analytical growth models and demonstrating the importance of growth rate stability in obtaining reproducible Al contents across successive superlattice periods. We confirmed with monolayer resolution, controlled Al contents in a wide compositional range and superlattice period widths of just a few monolayers (figure 1 (b)). The quality of our short-period superlattices was successfully tested via their employment as axial barriers in quantum dot nanowire heterostructures (figure 1 (c)). Additionally, by introducing a lattice-mismatched ternary alloy shell as the radial barrier (In(x)Al(1-x)As in this case), we demonstrated controlled strain-induced redshifts of the quantum dot emission energy by adjusting the In content of the shell. For 39% In, we measured a redshift in the quantum dot emission of 180 meV as shown by the photoluminescence measurements in figure 1 (d). Notwithstanding, limitations in what can be accomplished are present and possible strategies to overcome them will be presented. [1] Balaghi et al., Nano Lett. 16, 4032 (2016)
Published: 2021

12. Bandgap tuning and electron mobility enhancement in strained III-V nanowires

Author: (0000-0001-7125-7223) Balaghi, L., Tauchnitz, T., Hilliard, D., Moebus, F., Shan, S., (0000-0002-7762-1249) Fotev, I., (0000-0003-1309-6171) Pashkin, O., (0000-0002-5200-6928) Hübner, R., Grenzer, J., (0000-0003-3060-4369) Ghorbani Asl, M., (0000-0003-0074-7588) Krasheninnikov, A., (0000-0002-8060-8504) Schneider, H., Helm, M., (0000-0002-7546-0621) Dimakis, E., (0000-0001-7125-7223) Balaghi, L., Tauchnitz, T., Hilliard, D., Moebus, F., Shan, S., (0000-0002-7762-1249) Fotev, I., (0000-0003-1309-6171) Pashkin, O., (0000-0002-5200-6928) Hübner, R., Grenzer, J., (0000-0003-3060-4369) Ghorbani Asl, M., (0000-0003-0074-7588) Krasheninnikov, A., (0000-0002-8060-8504) Schneider, H., Helm, M., and (0000-0002-7546-0621) Dimakis, E.
Abstract: Nanowire geometry allows for realising defect-free heterostructures with large lattice mismatch, in addition to the possibility for their monolithic integration on foreign substrates. Engineering of the built-in strain can be employed to tailor the electronic properties and fit them to the needs of photonic or electronic devices. This talk focuses on the epitaxial growth, the built-in strain and the modified electronic properties of free-standing GaAs/InxGa1-xAs and GaAs/InxAl1-xAs core/shell nanowires on Si substrates. The thin GaAs core can be hydrostatically tensile strained to a level that depends on the chemical composition and the thickness of the shell. As a result, the bandgap of the GaAs core can be tuned to be anywhere between 1.4 and 0.8 eV, with potential applications in telecom photonics. The same mechanism is employed to shift also the emission of GaAs/AlxGa1-xAs quantum dots that can be grown inside the core, in a scheme that could be employed for photon sources in quantum technology. Furthermore, the reduced effective mass of electrons inside the strained GaAs core results in increased mobility values (higher than those in unstrained GaAs nanowires or in bulk GaAs), which is promising for the advancement of gate-all-around transistors.
Published: 2021

13. Tunable Magnetic Vortex Dynamics in Ion-Implanted Permalloy Disks

Author: Ramasubramanian, L., Kákay, A., Fowley, C., Yildirim, O., Matthes, P., Sorokin, S., Titova, A., Hilliard, D., Böttger, R., Hübner, R., Gemming, S., Schulz, S. E., Kronast, F., Makarov, D., Faßbender, J., Deac, A. M., and Publica
Subjects: frequency tunability, ion implantation, reduced saturation magnetisation, vortex dynamics, electrical detection
Abstract: Nanoscale, low-phase noise, tunable transmitter-receiver links are key for enabling the progress of wireless communi-cation. We demonstrate that vortex-based spin-torque nano-oscillators, which are intrinsically low-noise devices due to their topologically-protected magnetic structure, can achieve frequency tunability when submitted to local ion im-plantation. In the experiments presented here, the gyrotropic mode is excited with spin-polarized alternating currents and anisotropic magnetoresistance measurements yield discreet frequencies from a single device. Indeed, chromium-implanted regions of permalloy disks exhibit different saturation magnetisation than the surrounding, non-irradiated areas, and thus different resonance frequency, corresponding to the specific area where the core is gyrating. Our study proves that such devices can be fabricated without the need of further lithographical steps, suggesting ion irradiation can be a viable and cost-effective fabrication method for densely-packed networks of oscillators.
Published: 2020

14. Ion-irradiation-induced cobalt/cobalt oxide heterostructures: printing 3D interfaces

Author: Yildirim, O., Hilliard, D., Arekapudi, S. S. P. K., (0000-0002-3025-4883) Fowley, C., (0000-0003-0595-4949) Cansever, H., Koch, L., Ramasubramanian, L., (0000-0002-4885-799X) Zhou, S., Böttger, R., Lindner, J., (0000-0003-3893-9630) Faßbender, J., (0000-0002-1351-5623) Hellwig, O., Deac, A. M., Yildirim, O., Hilliard, D., Arekapudi, S. S. P. K., (0000-0002-3025-4883) Fowley, C., (0000-0003-0595-4949) Cansever, H., Koch, L., Ramasubramanian, L., (0000-0002-4885-799X) Zhou, S., Böttger, R., Lindner, J., (0000-0003-3893-9630) Faßbender, J., (0000-0002-1351-5623) Hellwig, O., and Deac, A. M.
Abstract: Interfaces separating ferromagnetic (FM) layers from non-ferromagnetic layers offer unique properties due to spin-orbit coupling and symmetry breaking, yielding effects such as exchange bias, perpendicular magnetic anisotropy, spin-pumping, spin-transfer torques, conversion between charge and spin currents and vice-versa. These interfacial phenomena play crucial roles for magnetic data storage and transfer applications, which require forming FM nano-structures embedded in non-ferromagnetic matrices. Here, we investigate the possiblity of creating such nano-structures by ion-irradiation. We study the effect of lateral confinement on the ion-irradiation-induced reduction of non-magnetic metal oxides (e.g., antiferro- or paramagnetic) to ferromagnetic metals. Our findings are later exploited to form 3-dimensional magnetic interfaces between Co, CoO and Pt by spatially-selective irradiation of CoO/Pt multilayers. We demonstrate that the mechanical displacement of the O atoms plays a crucial role during their reduction from insulating, non-ferromagnetic Co oxides to metallic Co. Metallic Co yields both perpendicular magnetic anisotropy in the generated Co/Pt nano-structures, and, at low temperatures, exchange bias at vertical interfaces between Co and CoO. If pushed to the limit of ion-irradiation technology, this approach could, in principle, enable the creation of densely-packed, atomic scale ferromagnetic point-contact spin-torque oscillator (STO) networks, or conductive channels for current-conned-path based current perpendicular-to-plane giant magnetoresistance read-heads.
Published: 2020

15. Dipeptidyl Peptidase-4 Inhibitors Administered in Combination With Metformin Result in an Additive Increase in the Plasma Concentration of Active GLP-1

Author: Migoya, E M, Bergeron, R, Miller, J L, Snyder, R NK, Tanen, M, Hilliard, D, Weiss, B, Larson, P, Gutierrez, M, Jiang, G, Liu, F, Pryor, K A, Yao, J, Zhu, L, Holst, J J, Deacon, C, Herman, G, Thornberry, N, Amatruda, J, Williams-Herman, D, Wagner, J A, and SinhaRoy, R
Published: 2010
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16. Multiple-Dose Pharmacodynamics and Pharmacokinetics of Anacetrapib, a Potent Cholesteryl Ester Transfer Protein (CETP) Inhibitor, in Healthy Subjects

Author: Krishna, R, Bergman, A J, Jin, B, Fallon, M, Cote, J, Van Hoydonck, P, Laethem, T, Gendrano, I N, III, Van Dyck, K, Hilliard, D, Laterza, O, Snyder, K, Chavez-Eng, C, Lutz, R, Chen, J, Bloomfield, D M, De Smet, M, Van Bortel, L M, Gutierrez, M, Al-Huniti, N, Dykstra, K, Gottesdiener, K M, and Wagner, J A
Published: 2008
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17. Optimizing dose selection using population PK/FD modeling and simulation for the cholesteryl ester transfer protein (CETP) inhibitor MK-0859 in healthy subjects: 8

Author: Bergman, A., Dykstra, K., Al-Huniti, N., Fallon, M., Lute, R., Chavez-Eng, C., Jin, B., Hartford, A., Cote, J., Hilliard, D., Laethem, T., Van Hoydonck, P., Snyder, K., Van Dyck, K., Stone, J., Lasseter, K. C., Van Bortel, L., Wagner, J., and Krishna, R.
Published: 2008

18. Pharmacokinetics, Pharmacodynamics, and Safety of a Prostaglandin D2 Receptor Antagonist

Author: Lai, E, Wenning, L A, Crumley, T M, De Lepeleire, I, Liu, F, de Hoon, J N, Van Hecken, A, Depré, M, Hilliard, D, Greenberg, H, OʼNeill, G, Metters, K, Gottesdiener, K G, and Wagner, J A
Published: 2008
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19. Ion Irradiation Induced Cobalt/Cobalt Oxide Heterostructures: From Materials to Devices

Author: Hilliard, D., Yildirim, O., (0000-0002-3025-4883) Fowley, C., Arekapudi, S. S. P. K., (0000-0003-0595-4949) Cansever, H., Böttger, R., (0000-0001-7192-716X) Hlawacek, G., (0000-0002-1351-5623) Hellwig, O., Lindner, J., (0000-0003-3893-9630) Faßbender, J., Deac, A. M., Hilliard, D., Yildirim, O., (0000-0002-3025-4883) Fowley, C., Arekapudi, S. S. P. K., (0000-0003-0595-4949) Cansever, H., Böttger, R., (0000-0001-7192-716X) Hlawacek, G., (0000-0002-1351-5623) Hellwig, O., Lindner, J., (0000-0003-3893-9630) Faßbender, J., and Deac, A. M.
Abstract: The demand on high data transfer and storage capacities requires smaller devices to transmit or save data. Forming well-defined ferromagnetic and electrically conducting volumes in a non-magnetic and insulating matrix in nanometer dimensions can pave a way to the production of such small devices. Oxygen reduction in Co3O4/Pd multilayers is possible by local proton irradiation resulting in ferromagnetic and conducting Co embedded in a nonmagnetic and insulating Co3O4 matrix [1]. To understand the mechanism behind this, we analysed in-plane single- and out-of-plane multilayer cobalt oxide films after H+ irradiation. We also confined irradiated areas on films in the range of microns to sub-micron to ascertain the lateral distribution of displaced oxygen, while establishing vertical Co/CoO interfaces which would lead to exchange bias across said interfaces. Irradiated films were characterized by SQUID magnetometry to estimate the effective O removal. Figure 1 (a) shows hysteresis loops for single layers irradiated with various doses and (b) multilayer systems irradiated with a fixed dose. In (a) we see that irradiating single layer films results in minimal O removal by measuring the saturation magnetization Ms. Geometrical confinement of the irradiated region indeed increases the Ms suggesting lateral O displacement, although this value is still only about 10% of bulk Co metal ((a) inset). The effect is much more pronounced in 0.8 nm CoO multilayers as indicated by the presence of perpendicular magnetic anisotropy (b). Figure 2 shows a loop shift for the multilayer (green) after field cooling demonstrating the formation of vertical Co/CoO interfaces post irradiation. This result is not seen in a single layer system (orange) as the layer is too thick to maintain a well-defined interface. These findings present new opportunities of device fabrication in single and bilayer systems.
Published: 2019

20. Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain

Author: (0000-0002-7070-7496) Wang, C., Zhang, H., Deepak, K., Chen, C., Fouchet, A., Duan, J., Hilliard, D., Kentsch, U., Chen, D., Zeng, M., Gao, X., Zeng, Y.-J., Helm, M., Prellier, W., (0000-0002-4885-799X) Zhou, S., (0000-0002-7070-7496) Wang, C., Zhang, H., Deepak, K., Chen, C., Fouchet, A., Duan, J., Hilliard, D., Kentsch, U., Chen, D., Zeng, M., Gao, X., Zeng, Y.-J., Helm, M., Prellier, W., and (0000-0002-4885-799X) Zhou, S.
Abstract: Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic in condensed matter physics and a precise control of such transitions plays a key role in developing novel electronic devices. Here we report an effective tuning of the MIT in epitaxial SrVO3 (SVO) films by expanding the out-of-plane lattice constant without changing in-plane lattice parameters, through helium ion irradiation. Upon increase of the ion fluence, we observe a MIT with a crossover from metallic to insulating state in SVO films. A combination of transport and magnetoresistance measurements in SVO at low temperatures reveals that the observed MIT is mainly ascribed to electron-electron interactions rather than disorder-induced localization. Moreover, these results are well supported by the combination of density functional theory and dynamical mean field theory (DFT+DMFT) calculations, further confirming the decrease of the bandwidth and the enhanced electron-electron interactions resulting from the expansion of out-of-plane lattice constant. These findings provide insights into the understanding of MIT in correlated oxides and perspectives for the design of unexpected functional devices based on strongly correlated electrons.
Published: 2019

21. Anxiety reduction in competitive running as a function of success

Author: Clingman, Joy M. and Hilliard, D. Vanessa
Subjects: Runners (Sports) -- Psychological aspects, Anxiety -- Research, Success -- Research, Competition (Psychology) -- Research
Abstract: The relationship between competition and anxiety in adult athletes who competed in a 5K running race was determined. Runners were administered both state and trait measures before and after the race, and were divided into sucessful and unsuccessful runners. The results showed that successful runners had a decreased level of post-race anxiety relative to both pre-race state anxiety and trait anxiety. No change in anxiety level was detected in unsuccessful runners., Most of the work in the area of sports and anxiety has focused on the effects of stress on performance. Specifically, investigators have attended to the effects of precompetition anxiety [...]
Published: 1994

22. DEMONSTRATION OF SPECIFIC COX-2 INHIBITION BY MK-966 IN HUMANS WITH SUPRATHERAPEUTIC DOSES.

Author: Van Hecken, A., Depré, M., Ehrich, E., De Lepeleire, I., Hilliard, D., Porras, A., Wong, P., Buntinx, A., Gertz, B. J., and De Schepper, P. J.
Published: 1999

23. Ion Irradiation Induced Cobalt/Cobalt Oxide Heterostructures: From Materials to Devices

Author: Hilliard, D., Yildirim, O., Fowley, C., Arekapudi, S. S. P. K., Cansever, H., Böttger, R., Hlawacek, G., Hellwig, O., Lindner, J., Faßbender, J., and Deac, A. M.
Subjects: displacement, bias, irradiation, magnetic, removal, exchange, cobalt oxide, oxygen removal, reduction, perpencular, anisotropy, magnetization, cobalt, oxygen reduction, Co3O4, ferromagnetic, ion beam, antiferromagnetic, ion, oxygen, CoO, proton, paramagnetic
Abstract: The demand on high data transfer and storage capacities requires smaller devices to transmit or save data. Forming well-defined ferromagnetic and electrically conducting volumes within a non-magnetic and insulating matrix in the dimensions of several nanometers can pave a way to the production of such small devices. It has been demonstrated that the reduction of oxygen in Co₃O₄/Pd multilayers is possible via local proton irradiation resulting in ferromagnetic and conducting Co embedded in a nonmagnetic and insulating Co₃O₄ matrix [1]. However, the physical mechanism behind the ion irradiation-induced oxide reduction was not addressed clearly. There are two possible mechanisms suggested to play a role behind this oxide reduction. The first one is the chemical reduction of oxygen by reacting with implanted H+ ions, while the second possible mechanism is atomic displacements induced by ion irradiation. To address this issue, we analysed cobalt oxide thin films after irradiation with H+ and Ne+ ions at different doses. The irradiation parameters for Ne+ were chosen to give the same displacements per atom (dpa) as that of H+ which is required to reduce cobalt oxide. We also confined irradiated areas on the films in the range of microns to submicron, in order to ascertain the lateral distribution of oxygen after irradiation. We prepared single layer films of CoO (6-12nm) and Co₃O₄ (10nm) capped with Pt protection layers. Broad-beam H+ irradiations were performed at 0.3 keV for ion doses ranging from 10¹⁵ to 10¹⁷ ions/cm² on unpatterned films. After irradiation the films were characterized structurally and magnetically and compared to un-irradiated films. Extended films showed approximately 7% of the Co bulk metal saturation magnetization (MS) after irradiation at a dose of 5 x 10¹⁶ ions/cm² (fig. 1a inset). The increase is more pronounced with Co₃O₄ than CoO (fig. 1a). A sample was also prepared with a striped irradiation mask of 40 μm pitch. These films showed a higher magnetization after irradiation at lower doses as compared to unpatterned films, 0.14 MA/m for a dose of 10¹⁶ ions/cm² (striped) as opposed to 0.025 MA/m (extended) for a dose of 10¹⁷ ions/cm². Figure 1 (b) shows the effect of stripe width (0.5, 5, 10, 20 μm) on the resulting magnetization after H+ irradiation at the same energy with a dose of 10¹⁷ ions/cm². No clear correlation between stripe width and MS was seen in either oxide phase for stripes down to 0.5 μm. However, the CoO sample with 0.5 μm stripes and a thinner oxide thickness of 6 nm (gold line) as opposed to 12 nm exhibited larger MS after irradiation, indicating oxygen displacements occur in the first few nanometers of the oxide. We also performed 5 keV Ne+ irradiations with the helium-ion microscope (HIM) varying the ion dose from 10¹⁴ to 10¹⁶ ions/cm². After Ne+ irradiations magnetic force microscopy (MFM) images were taken along with a topography image in the remnant state (fig. 2). Starting from the ion dose of 5x10¹⁴ ions/cm², a magnetic contrast could be observed by MFM, suggesting that oxygen atoms were successfully removed locally by reducing paramagnetic CoO to ferromagnetic Co. The formation of topographical bubbles was observed upon increasing the ion dose from 10¹⁵ ions/cm² to 10¹⁶ ions/cm². The lateral and horizontal sizes of the observed bubbles show a clear dependence on the ion dose with a narrow size distribution. In conclusion, our results show that, oxygen removal by means of H+ irradiation is more efficient in Co₃O₄ films as opposed to CoO. Additionally, although there is little dependence of the resulting Ms on the pitch of the stripes (in the range of 0.5 - 20 μm), the use of a stripe mask has a more pronounced effect on the oxygen removal process as compared to the irradiations on extended films. Therefore, the physical mechanism behind the ion-irradiation induced oxide reduction process cannot purely be a chemical reaction between oxygen and hydrogen. As an outlook, the lateral size and spacing of the ferromagnetic regions generated by H+ irradiation is only limited by the resolution of EBL. This method and the successful formation of ferromagnetic regions upon Ne+ irradiation using the HIM can be exploited to print smaller, closer and synchronized contacts for nanocontact spin torque oscillators.
Published: 2018

24. Ion Irradiation Induced Cobalt/Cobalt Oxide Heterostructures: From Materials to Devices

Author: Hilliard, D., Yildirim, O., Fowley, C., Kanth Arekapudi, S. S. P. K., Cansever, H., Böttger, R., Hlawacek, G., Hellwig, O., Lindner, J., Fassbender, J., Deac, A. M., and Perzanowski, M.
Subjects: Condensed Matter::Materials Science, Ion irradiation, Oxygen reduction, Ferromagnetic, Cobalt oxide
Abstract: Spintronic devices are often patterned from continuous films into micro- or nanostructures. Fabrication of those nano-devices is self-limited and depends on the lateral resolution of the chosen fabrication method. Ion irradiation offers an alternative route to introduce smaller magnetic patterns limited by the size of the ion beam. Irradiation of oxide materials can cause chemical reduction and lead to the local formation of metallic species. By using the oxide family of ferromagnets (e.g., Fe, Ni and Co), reduction leads to the formation of ferromagnetic and conducting volumes limited by the size of the ion irradiated area that are embedded into a non-magnetic and insulating matrix. On the other hand, the physical mechanism behind ion irradiation-induced oxide reduction could not be explained. Therefore, our studies focus on ion (H, He, Ne, O) irradiated cobalt-oxide (CoO or Co3O4) systems in order to explain the physics behind the process. Also, the knowledge is being exploited to tune exchange-bias direction, prepare nano contacts for synchronized spin torque oscillators, and to form topographically stabilized magnetic skyrmions.
Published: 2017

25. Race Walkers Quicken Their Pace by Tuning In, Not Stepping Out.

Author: Clingman, Joy M. and Hilliard, D. Vanessa
Subjects: WALKING (Sports), SPORT walking training, ATHLETES, HUMAN locomotion, DISSOCIATION (Psychology), WALKING
Abstract: This study examined the effects of attentional focus on race walking performance. Sixteen experienced race walkers, eight males and eight females, were randomly assigned to walk four separate half-mile segments on a quarter-mile track under specific sets of instructions. Two sets of instructions were externally oriented and two were internally oriented. The internally oriented instructions included a set asking the subjects to focus on cadence (the number of steps taken in a designated period of time) and a set asking them to focus on stride length (the distance covered in a single step). The externally oriented instructions asked subjects to use a dissociative strategy. Although no overall difference was found between internal and external focus, results indicated that the focus on cadence was superior to both the external focus, p<.05, and a focus on stride length, p<.05. No significant differences between the stride length focus and the external focus were found. These results are discussed in terms of the importance of using an internal focus that is beneficial. [ABSTRACT FROM AUTHOR]
Published: 1990
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26. Controllable growth of vertically aligned graphene on C-face SiC

Author: Liu, Y., Chen, L., Hilliard, D., Huang, Q.-S., Liu, F., Wang, M., Böttger, R., Hübner, R., N'Diaye, A. T., Arenholz, E., Heera, V., Skorupa, W., Zhou, S., Liu, Y., Chen, L., Hilliard, D., Huang, Q.-S., Liu, F., Wang, M., Böttger, R., Hübner, R., N'Diaye, A. T., Arenholz, E., Heera, V., Skorupa, W., and Zhou, S.
Abstract: We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as it can interfere with further vaporization. A growth mechanism is proposed in terms of physical vapor transport. The monolayer character of vertically aligned graphene is verified by Raman and X-ray absorption spectroscopy. With the processed samples, d0 magnetism is realized and negative magnetoresistance is observed after Cu implantation. We also prove that multiple carriers exist in vertically aligned graphene.
Published: 2016

27. ISV safety, processing, and starter path issues

Author: Hilliard, D K, primary and Kindle, C H, additional
Published: 1991
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28. Pacific Northwest Laboratory annual report for 1990 to the DOE Office of Energy Research

Author: Park, J. F., primary, Kreml, S. A., additional, Wildung, R. E., additional, Hefty, M. G., additional, Perez, D. A., additional, Chase, K. K., additional, Elderkin, C. E., additional, Owczarski, E. L., additional, Toburen, L. H., additional, Parnell, K. A., additional, Faust, L. G., additional, Moraski, R. V., additional, Selby, J. M., additional, Hilliard, D. K., additional, and Tenforde, T. S., additional
Published: 1991
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29. Pharmacokinetics, Pharmacodynamics, and Safety of a Prostaglandin D2 Receptor Antagonist

Author: Lai, E, primary, Wenning, LA, additional, Crumley, TM, additional, De Lepeleire, I, additional, Liu, F, additional, de Hoon, JN, additional, Van Hecken, A, additional, Depré, M, additional, Hilliard, D, additional, Greenberg, H, additional, O’Neill, G, additional, Metters, K, additional, Gottesdiener, KG, additional, and Wagner, JA, additional
Published: 2007
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30. LBOVI-A-3Identification of skin biomarkers following testosterone administration in postmenopausal women

Author: STOCH, S, primary, TANAKA, W, additional, HILLIARD, D, additional, CHAPPELL, D, additional, MODUR, V, additional, PHILLIPS, R, additional, DEUTSCH, P, additional, ABBI, S, additional, CRUMLEY, T, additional, and MILLER, J, additional
Published: 2006
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31. Pharmacokinetics and pharmacodynamics of sitagliptin, an inhibitor of dipeptidyl peptidase IV, in healthy subjects: Results from two randomized, double-blind, placebo-controlled studies with single oral doses

Author: HERMAN, G, primary, STEVENS, C, additional, VANDYCK, K, additional, BERGMAN, A, additional, YI, B, additional, DESMET, M, additional, SNYDER, K, additional, HILLIARD, D, additional, TANEN, M, additional, and TANAKA, W, additional
Published: 2005
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32. Radar Cross Section measurements of small Unmanned Air Vehicle Systems in non-cooperative field environments.

Author: To, L., Bati, A., and Hilliard, D.
Published: 2009

33. Utilization of compact range collimator for Radar Cross-Section measurements.

Author: Hilliard, D., Mensa, D., and Oh, K.
Published: 2009

34. Demonstration of specific COX-2 inhibition by MK-966 in humans with supratherapeutic doses

Author: VANHECKEN, A, primary, DEPRE, M, additional, EHRICH, E, additional, DELEPELEIRE, I, additional, HILLIARD, D, additional, PORRAS, A, additional, WONG, P, additional, BUNTINX, A, additional, GERTZ, B, additional, and DESCHEPPER, P, additional
Published: 1999
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35. Performance of an Automated High Accuracy Phase Measurement System.

Author: Stein, S., Glaze, D., Levine, J., Gray, J., Hilliard, D., Howe, D., and Erb, L.
Published: 1982
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36. Pharmacokinetics, Pharmacodynamics, and Safety of a Prostaglandin D2 Receptor Antagonist.

Author: Lai, E., Wenning, L. A., Crumley, T. M., De Lepeleire, I., Liu, F., de Hoon, J. N., Van Hecken, A., Depré, M., Hilliard, D., Greenberg, H., O'Neill, G., Metters, K., Gottesdiener, K. G., and Wagner, J. A.
Subjects: PHARMACOKINETICS, PHARMACODYNAMICS, PHYSIOLOGICAL effects of chemicals, THERAPEUTICS, SAFETY
Abstract: Laropiprant is a selective antagonist of the prostaglandin D2 (PGD2) receptor subtype 1 (DP1). Three double-blind, randomized, placebo-controlled studies evaluated the safety, tolerability, pharmacokinetics, and pharmacodynamics of single and multiple oral doses of laropiprant in healthy male volunteers. Single doses up to 900 mg and multiple doses up to 450 mg were generally well tolerated. Laropiprant exhibited dose-proportional pharmacokinetics. Oral absorption is rapid (Tmax=0.8–2.0 h) and the terminal half-life is approximately 12–18 h. The pharmacokinetics of laropiprant was not affected by food. Single doses of 6 mg and higher were effective in suppressing PGD2-induced cyclic AMP accumulation in platelets, demonstrating laropiprant target engagement with DP1. Laropiprant has detectable off-target antagonist effects at the thromboxane A2 receptor but no clinically significant effect on collagen-induced platelet aggregation or bleeding times with multiple doses up to 200 mg.Clinical Pharmacology & Therapeutics (2008); 83, 6, 840–847 doi:10.1038/sj.clpt.6100345 [ABSTRACT FROM AUTHOR]
Published: 2008
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37. Pharmacokinetics and Pharmacodynamic Effects of the Oral DPP-4 Inhibitor Sitagliptin in Middle-Aged Obese Subjects.

Author: Herman GA, Bergman A, Liu F, Stevens C, Wang AQ, Zeng W, Chen L, Snyder K, Hilliard D, Tanen M, Tanaka W, Meehan AG, Lasseter K, Dilzer S, Blum R, and Wagner JA
Abstract: Sitagliptin (MK-0431) is an oral, potent, and selective dipeptidyl peptidase-IV (DPP-4) inhibitor developed for the treatment of type 2 diabetes. This multicenter, randomized, double-blind, placebo-controlled study examined the pharmacokinetic and pharmacodynamic effects of sitagliptin in obese subjects. Middle-aged (45-63 years), nondiabetic, obese (body mass index: 30-40 kg/m(2)) men and women were randomized to sitagliptin 200 mg bid (n = 24) or placebo (n = 8) for 28 days. Steady-state plasma concentrations of sitagliptin were achieved within 2 days of starting treatment, and >90% of the dose was excreted unchanged in urine. Sitagliptin treatment led to approximately 90% inhibition of plasma DPP-4 activity, increased active glucagon-like peptide-1 (GLP-1) levels by 2.7-fold (P < .001), and decreased post-oral glucose tolerance test glucose excursion by 35% (P < .050) compared to placebo. In nondiabetic obese subjects, treatment with sitagliptin 200 mg bid was generally well tolerated without associated hypoglycemia and led to maximal inhibition of plasma DPP-4 activity, increased active GLP-1, and reduced glycemic excursion. [ABSTRACT FROM AUTHOR]
Published: 2006

38. Automated High-Accuracy Phase Measurement System

Author: Stein, S., Glaze, D., Levine, J., Gray, J., Hilliard, D., Howe, D., and Erb, L.A.
Subjects: Measurement, Accuracy, Automation, Oscillators, Frequency, Performance, Operating System, Data Recovery, Phase Modulation
Published: 1983

39. Chemotherapy of non-small cell lung carcinoma guided by an in vitro drug resistance assay measuring total tumour cell kill.

Author: Wilbur, DW, Camacho, ES, Hilliard, DA, Dill, PL, Weisenthal, LM, Wilbur, D W, Camacho, E S, Hilliard, D A, Dill, P L, and Weisenthal, L M
Published: 1992
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40. The effect of MK-0591, a novel 5-lipoxygenase activating protein inhibitor, on leukotriene biosynthesis and allergen-induced airway responses in asthmatic subjects in vivo

Author: Diamant, Z., Timmers^a, M.C., van der Veen^a, H., Friedman, B.S., Smet, M.D., Depre, M., Hilliard, D., Bel, E.H., and Sterk, P.J.
Abstract: Background: The 5-lipoxygenase metabolites of arachidonic acid are likely to be involved in the pathophysiology of atopic asthma. We investigated the effect of pretreatment with MK-0591, a novel 5-lipoxygenase activating protein inhibitor, on allergen-induced early asthmatic reactions (EARs) and late asthmatic reactions (LARs), and subsequent airway hyperresponsiveness to histamine. Methods: Eight atopic men with mild to moderate asthma aged 19 to 31 years, (forced expiratory volume in 1 second [FEV"1] >=67% of predicted value, histamine provocative concentration causing a 20% fall in FEV"1 [PC"2"0] <4 mg/ml) and documented EAR and LAR to house dust mite extract participated in a two-period, double-blind, placebo-controlled, crossover study. During each study period histamine PC"2"0 was measured 2 days before and 1 day after a standardized allergen inhalation challenge test. MK-0591 was administered in 3 oral doses of 250 mg each at 24, 12, and 1.5 hours before inhalation of allergen. Biochemical activity of MK-0591 was determined by calcium ionophore A-23187-stimulated leukotriene (LT)B"4 biosynthesis in whole blood ex vivo and by urinary LTE"4 excretion. Airway response to allergen was measured by FEV"1 (percent fall from baseline). The EAR (0 to 3 hours) and the LAR (3 to 8 hours) were expressed as corresponding areas under the time-response curves. Results: MK-0591 and placebo did not differ in their effects on prechallenge FEV"1 (p = 0.10). As compared with the value before pretreatment, MK-0591 blocked LTB"4 biosynthesis and LTE"4 excretion by a mean of 98% (range, 96% to 99%; p < 0.002) and 87% (range, 84% to 96%; p < 0.046), respectively, from 0 to 24 hours after allergen challenge. Both the EAR and the LAR were significantly reduced after administration of MK-0591 as compared with placebo, with a mean inhibition of 79% (p = 0.011) and 39% (p = 0.040), respectively. Allergen-induced airway hyperresponsiveness was not significantly different between the two pretreatment periods (p = 0.37). Conclusions: In this study oral MK-0591 prevented leukotriene biosynthesis after allergen challenge in patients with mild to moderate asthma. The results of our study indicate that 5-lipoxygenase products play an important role during the EAR, whereas their contribution to the pathophysiology of the LAR seems to be of less importance. (J ALLERGY CLIN IMMUNOL 1995;95:42-51.)
Published: 1995
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41. Performance of an Automated High Accuracy Phase Measurement System

Author: NATIONAL BUREAU OF STANDARDS BOULDER CO TIME AND FREQUENCY DIV, Stein,S., Glaze,D., Levine,J., Gray,J., Hilliard,D., NATIONAL BUREAU OF STANDARDS BOULDER CO TIME AND FREQUENCY DIV, Stein,S., Glaze,D., Levine,J., Gray,J., and Hilliard,D.
Abstract: A fully automated measurement system has been developed that combines many properties previously realized with separate techniques. This system is an extension of the dual mixer time difference technique, and maintains its important features: zero dead time, absolute phase different measurement, very high precision, the ability to measure oscillators of equal frequency and the ability to make measurements at the time of the operator's choice. For one set of design parameters, the theoretical resolution is 0.2 ps, the measurement noise is 2 ps rms and measurements may be made within 0.1 s of any selected time. The dual mixer technique has been extended by adding scalers which remove the cycle ambiguity experienced in previous realizations. In this respect, the system functions like a divider plus clock, storing the epoch of each device under test in hardware., This article is from the Proceedings of the Symposium on Frequency Control (36th Annual), 2-4 Jun 82, Philadelphia, PA., AD-A130 811, p314-320.
Published: 1982

42. Low cycle fatigue testing, a necessary part of advanced development

Author: KRAIG, A., primary and HILLIARD, D., additional
Published: 1980
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43. Adjuvant methotrexate escalated to toxicity for resectable stage III and IV squamous head and neck carcinomas--a prospective, randomized study.

Author: Rentschler, R E, primary, Wilbur, D W, additional, Petti, G H, additional, Chonkich, G D, additional, Hilliard, D A, additional, Camacho, E S, additional, and Thorpe, R B, additional
Published: 1987
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44. Fetal ERAP2 variation is associated with preeclampsia in African Americans in a case-control study

Author: Elovitz Michal A, Gomez Ricardo, Kusanovic Juan P, Srinivas Sindhu, York Timothy P, Hilliard DaShaunda D, Hill Lori D, Romero Roberto, and Strauss Jerome F
Subjects: Internal medicine, RC31-1245, Genetics, QH426-470
Abstract: Abstract Background Preeclampsia affects 3-8% of pregnancies and is a major cause of maternal and perinatal morbidity and mortality worldwide. This complex disorder is characterized by alterations in the immune and vascular systems and involves multiple organs. There is strong evidence for a genetic contribution to preeclampsia. Two different single nucleotide polymorphisms (SNPs) in the endoplasmic reticulum aminopeptidase 2 (ERAP2) gene were recently reported to be associated with increased risk for preeclampsia in two different populations. ERAP2 is expressed in placental tissue and it is involved in immune responses, inflammation, and blood pressure regulation; making it is an attractive preeclampsia candidate gene. Furthermore, ERAP2 expression is altered in first trimester placentas of women destined to develop preeclampsia. Methods A case-control design was used to test for associations between two SNPs in ERAP2, rs2549782 and rs17408150, and preeclampsia status in 1103 Chilean maternal-fetal dyads and 1637 unpaired African American samples (836 maternal, 837 fetal). Results We found that the fetal minor allele (G) of rs2549782 was associated with an increased risk for preeclampsia in the African American population (P = 0.009), but not in the Chilean population. We found no association between rs17408150 and risk for preeclampsia in the Chilean population. Association between rs17408150 and risk for preeclampsia was not tested in the African American population due to the absence of the minor allele in this population. Conclusions We report an association between fetal ERAP2 and preeclampsia in an African American population. In conjunction with previous studies, which have found maternal associations with this gene in an Australian/New Zealand population and a Norwegian population, ERAP2 has now been associated with preeclampsia in three populations. This provides strong evidence that ERAP2 plays a role in the development of preeclampsia.
Published: 2011
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45. Surface wave scattering on a drone air vehicle.

Author: Benson, M., Hilliard, D., Mensa, D., Oh, K., To, L., and Yates, W.
Published: 1993
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46. Luneburg lens antenna with photonic sensors.

Author: Hilliard, D. and Mensa, D.
Published: 1992
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47. LBOVI-A-3.

Author: Stoch, S. A., Tanaka, W. K., Hilliard, D. A., Chappell, D. L., Modur, V. R., Phillips, R. L., Deutsch, P., Abbi, S., Crumley, T. M., Miller, J. L., Lyle, S., Schapiro, B. L., Gottesdiener, K. M., and Wagner, J. A.
Subjects: BIOMARKERS, TESTOSTERONE, PHARMACODYNAMICS, GENE expression, RANDOMIZED controlled trials, PLACEBOS, DRUG side effects
Abstract: Background/aims: To pilot a pharmacodynamic (PD) model of short-term androgen administration that may be used to predict long-term effects of androgen administration in postmenopausal women. The study was specifically designed to identify biomarkers that evaluate early skin response to exogenous androgens. The clinical consequences of androgen administration include hirsutism and acne. Skin biopsies were performed to document morphological changes in the pilosebaceous unit (PSU) and gene expression changes (Taqman and microarray). Functional skin response was gauged by measuring sebum excretion rates (SER).Methods: A double-blind, randomized, placebo-controlled, parallel-group study was conducted in 36 healthy postmenopausal female subjects to identify early biomarkers of androgen administration. Subjects were randomized to receive either 2.5 mg of transdermal testosterone gel (TTG; AndroGel®), 300 μg of TTGtransdermal testosterone gel, or placebo gel, daily for 6 weeks in a 1:1:1 ratio. Skin biopsies were performed to document morphological changes in the pilosebaceous unit (PSU) and gene expression changes (Taqman and microarray). Five-mm skin punch biopsies were obtained from the back of subjects at baseline, after 6 weeks of treatment, and 4 weeks post treatment. Biopsies were analyzed for histological changes characterized by total sebaceous gland volume and sebocyte cell size. Skin biopsies were also analyzed for molecular skin changes using skin Taqman/microarray assays. Measurements of sebum excretion rates (SER) were obtained at baseline and after 6 weeks of treatment.Results: Six weeks of treatment with the 2.5-mg TTGdose of AndroGel® increased sebaceous gland volume on average by 42% (p=0.0410) and sebum excretion rateSER by 52% (p=0.0021) relative to placebo. Microarray and Taqman analyses on skin samples also demonstrated changes in the 2.5-mg TTG AndroGel® group. Histological and molecular findings were noted to be reversible 4 weeks after discontinuing therapy.Analysis of Total Sebaceous Gland Volume (106 μm3) at Week 6 (See Tables 1 and 2)Analysis Results for SER at Week 6Conclusions: TTG treatment is associated with marked increases in sebaceous gland volume and SER, consistent with side effects including hirsutism and acne. Biomarkers sufficiently robust to support using to test for androgen-mediated skin effects in postmenopausal women were identified.Clinical Pharmacology & Therapeutics (2005) 79, P84–P84; doi: 10.1016/j.clpt.2005.12.299 [ABSTRACT FROM AUTHOR]
Published: 2006
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48. Effect of rofecoxib, etoricoxib, celecoxib, and naproxen on urinary excretion of prostanoids in elderly volunteers.

Author: Schwartz, J. I., Vandormael, K., Thach, C., Lasseter, K. C., Holmes, G. B., Miller, J. L., Hreniuk, D., Hilliard, D., Snyder, K. M., Gertz, B. J., and Gottesdiener, K. M.
Published: 2004
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49. Redundant clothing: a readily observable marker for schizophrenia in the psychiatric emergency room population

Author: Arnold, V. K., Rosenthal, T. L., Dupont, R. T., and Hilliard, D.
Published: 1993
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50. 40(th) EASD Annual Meeting of the European Association for the Study of Diabetes : Munich, Germany, 5-9 September 2004

Author: S. Artigas, A V Dreval, Mark I. McCarthy, C Watson, Peter H. Bennett, M Quint, Y Ikeda, E Alpert, F Schiele, H Sekihara, Erik Gylfe, P Lowe, J Kuhlmann, Alain Golay, V Longo, Shahidul Alam Khan Akm., L G Mantovani, M Zawodniak-Szalapska, G Winkler, T Harrity, L Virág, U Johne, Kuo S-W., Linda C Tapsell, J Rodriguez, Michel Komajda, K Kankova, Carole A. Cull, M Sporna, E Estilles, U Ribel, M C Spruce, E Buzzigoli, T Prazak, J K McLaughlin, M K Lingohr, M Lim, F Calara, A Siebenhofer, G Meregalli, Roberto Anichini, A D Baron, R Kurashvili, P C Butler, G I Fantus, T. E. De Gooyer, Park Y-M., R. Walther, S Heinrich, Agnieszka Zawiejska, S Mukherjee, Nikolaos Papanas, G Wong, Ian D. Caterson, David M. Maahs, Shuichi Kaneko, Alexandra E. Butler, Francisco Javier Ampudia-Blasco, O N Kong, Attali J-R., C A Hedman, K Oshinyemi, Nicolle Müller, I C Cranston, N Okumus, M V Vlaiculescu, Balasubramanian Ravikumar, W W Cheatham, K Mukasa, K B Biswas, Annunziata Lapolla, Phil McEwan, G Mader, Gilles Chassot, Dragi Anevski, Werner A. Scherbaum, M Donath, C Hesselmann, R A Gandhi, David E. Moller, Ezio Bonifacio, C Garcia, V Ifandi, P Hornnes, Nieuwenhoven Fav., C Puech, S Pérez-Del-Pulgar, Kim S-R., G Hines, C Rubio Terrés, Michael Gaster, N. Hosszufalusi, A Scholze, Andrew A. Young, Stavros Liatis, F Hariri, S Tan, Paul Valensi, Allan E. Karlsen, J Kim, E. Moberg, J Kaiser, L Berman, G Nelson, A Altkrüger, P Kothare, D B Cook, S Doran, G. van Dijk, Shahnaz Shahinfar, Kim C-S., P Stahl, M Manousaki, S Sigrist, S K Lim, M. P. Stern, A Guberti, C Rezzani, J McKenney, Karl Thomaseth, Sofia Carlsson, M Julia, R Brillante, I Rubesova, T Darkow, E Matsumoto, Wendy M. Macfarlane, M Di Martino, G Bardini, Rossella Menghini, D Duhot, E Farcasiu, Annalisa Natalicchio, I Lindner, J Buvat, Christian L. Brand, Harry Dorchy, Iwona Pietrzak, Z T Luo, P Home, M Ekelund, Jesper Gromada, Kristine Færch, F Piarulli, H Kim, R Mentel, Zsuzsanna K. Zsengellér, Dullaart Rpf., Anton Luger, Thomas A. Pearson, V Manicardi, P Rösen, Feng Y-M., R Morganti, Lars Hansen, Demuth H-U., Haruo Kasai, A Shostak, Rudi Steffensen, G Taylor, Markolf Hanefeld, C Santini, E Hamaguchi, Roberto Miccoli, F Storms, M Cooper, Y Lee, Allison E. Aiello, P Smith, T Suehiro, K Treece, M Waluś, Timothy A Welborn, Simone Baltrusch, E Kontela, S Chai, J Crean, H Yokoyama, Johan G. Eriksson, Rafael Hernández Hernández, J Rodríguez-Saldaña, M P Tornero, G Formoso, D. Lovell, E Bingham, A Mylonakis, M Manteghetti, D Fedele, Antonio Martín-Duce, Ralph A. DeFronzo, D Salcedo, Kurt Højlund, Antonio Petrone, Sheu Whh., C Gutierrez, Flavia Pricci, S Kurita, Z G Abbas, M M Benedetti, Philippe A. Halban, Daniel J. Cox, O Ljungkvist, Justine Davies, J Palsgaard, Lars Sjöström, E Bosi, L Janin-Manificat, W. F. Kelly, M. Fernandez, E Colak, O V Mulyarchik, B Kronshage, F Lang, M Erfurth, Takashi Kadowaki, N Jendrike, U Walter, J Wishart, Y. Neye, D Kim, N Furuhashi, M Barsotti, D Florow, L Ke, L Borgquist, N C Jackson, Ffolliott M. Fisher, V Baskar, K Yoshioka, Bryan A. Wolf, G Chabrier, R Skoumal, Livio Luzi, H Kose, I Pharisien, B. Klein, H Winiarska, M C Johnson, L Griffiths, Nonna Kravchun, C Combe, Baptist Gallwitz, J Zdychova, L Skorda, Jorma Ilonen, W Gao, I N Steen, A Terrinoni, P D Ambery, W Kern, C M Kusminski, Cho M-H., Paolo Pozzilli, Louise G. Grunnet, E Schönle, David R Matthews, Robert W. Taylor, Y Cohen, Kim H-S., M P Eccles, N B Tutuncu, D McDowell, Richard M. Bergenstal, K Takamatsu, T Steiner, Jaan Palgi, Valdemar Grill, N Niculescu, G Federici, S Lehto, P. M. McKeigue, M Barone, Michael E. Trautmann, S Smirnov, J Mannion, M Eto, C Rousseau, M Conti, C S Ernest, Antonio Ceriello, D H Schweitzer, Jung E-D., Andreas Festa, Avijit Lahiri, A Shepelkevich, A Murro, A Kollmann, Jonathan R.S. Arch, R Landgraf, Son H-Y., I Engelsberger, E Agardh, S Rodríguez-Mulero, P J Kraml, K Lee, D. F. Du Toit, E Kim, G Fadini, Williams Ajk., Philip Home, M B Antcieferov, C Perlemoine, D Perrea, Song X-L., D Ruggieri, Krister Bokvist, Heidi Sørensen, Bilbao, G Yoshino, J P Taylor, Shen H-M., S M Furier, R Urquhart, J Wohlgelernter, Jianping Weng, T. Baba, Q Hong, C Silva, Castaigne J-P., M Felaco, X X Zhang, M Jaroň, Milla Rosengård-Bärlund, J G Papp, Toshio Miyata, Lervang H-H., Park M-K., I Kinalska, A Long, Oomen Phn., N Kogawa, Ippolita Patrizia Patera, S. Karadeniz, Dinesh Selvarajah, D S Chung, A Wensaas, Richard Imrich, M Recasens, J Ruxer, O Buchea, E Wilpart, S P Stepanenko, Le Ttd., H Ohgawara, Mariaconsuelo Valentini, A Mondok, M Peltonen, Marianne O. Larsen, K Chatzianagnostou, Agneta Ståhle, A L Ferrari, L Bordier, F Maingrette, A Matsuda, G Vukomanovic, Jakob D. Wikstrom, T Yamakita, E Gorostiaga, J Jin, B Gopalan, Heinz Drexel, S Hewitt, Rury R. Holman, C Dieterle, T L Ruchti, N Asatiani, M Sidira, A Iezzi, A J Sommerfield, D Châtenet, M L Olsen, R Bergemann, C Koehler, T L Kuraeva, B Balas, Christian Berne, E Santos-Mazo, G Smith, A Siejka, R Kožnarová, A Mattina, S Sheikh, A Adomeit, M Rasmussen, J. Fagerudd, N Busciantella Ricci, Nuria Vilarrasa, E Hammar, T L Thoms, L Aydın, Ron G. Rosenfeld, A Nikolajuk, R Gos, C L Morgan, H L Yu, D Dheelchand, S Ramrath, N Boudriga, Jerome I. Rotter, C Jahannault, W M Weston, Folke Lindgärde, M Hertlova, D Knight, A Monroy-Mayorga, E Pardini, A Chamson-Reig, B Franke, Janie McCluskey, Joseph Bryan, C Nikolopoulou, Christie M. Ballantyne, Fausto Santeusanio, L Pegoraro, M Lee, A Klimenko, S Jaiveer, K. Pettersson-Fernholm, Michael A. Nauck, A Ekbom-Schnell, G Deferrari, Riccardo Schiaffini, S. Pampanelli, Khan Aka., David Hopkins, Maija Wessman, M Kamarinos, Noh J-H., O Ebisui, K McCarroll, Jeppe Sturis, Peter Nowotny, N Gorbenko, Åke Sjöholm, David G. Maggs, A E Halseth, B Cresci, A A Ortiz-Gress, A Korakovouni, O Matejkova, C E Mogensen, C J Lin, Ramon Gomis, H Seaman, C Granier, Yang C-H., F Assah, O Sanchez, Fausto Machicao, Peter G. Morris, Alberto Ortiz, A Giardinelli, D Bracaglia, A Gonzalo, S Pavlatos, Andreas Lechner, F Canovic, L Sjolind, Allan Vaag, Birgitte Bruun Nielsen, David A. Ziegler, Vito Lampasona, R Gershoni-Baruch, A. Dei Cas, H Renz, E Mena, Matthew Waltham, Kim D-M., H Levanen, D D Mick, Valentina Alexandrovna Peterkova, E Meskhishvili, Sarah Nutland, R Bustani, John R. Lindsay, M Christoforidou, A Abicht, E Harno, K Cyganek, A Fitchet, S Neelotpol, P Nikishin, P Serradas, J Hinrichsen, M Halvorson, M Chovatia, B Voet, Jinny Willis, E Parretti, M Haslbeck, M Wellard, L Teng, Julio Wainstein, J S Fischer, K. Lalic, D Roggenland, I Gich, R Anwar, Maurizio Cassader, D Serota, X J Li, R J Schotzinger, Vilmundur Gudnason, Björn Zethelius, S A Wootton, W Andrzejewski, R Rezsohazy, R Gao, T Klimentova, T Mazurek, I Bruckner, C Dohrmann, R E James, G daSilva Xavier, Kim S-Y., A Dorca, Stuart J. Pocock, Terri J. Allen, I Giovos, P B Parab, N H Andersen, P Fotinakis, Miriam Cnop, H Lee, Norbert Tennagels, Omorodola I. Abatan, F Ailett, I. Lager, D Manzella, H Hut, Larry A. Distiller, G Lip, Lim S-K., Rong Zhang, T Tsuno, Steen Knudsen, M. Bajardi, Manuel Benito, Dai Sugimoto, Melvin J. Prince, D W Dunstan, D Rankins, K A Majali, G Ozansoy, Isabella Russo, S Uçak, G Annuzzi, R Talar-Wojnarowska, K Lange, S Neugebauer-Baba, Campbell H. Thompson, Eric Renard, P. D. Mountjoy, Z Morrison, Elizabeth A. Davis, Franco Cavallo, C Corvaja, R Antuña, Craig John Currie, H Linnebjerg, He Y-L., A J Palmer, Mariola R. Chacón, H Malinska, M. Jones, R Lichnovská, K Mandes, Paolo Tessari, T Mokhort, A Laina, H. L. Y. Chan, I Schmidt, R Banks, Richard G. IJzerman, L Ksinantova, G Setti, H Vaudry, A Gallo, V Spallone, Chen J-W., Thomas Danne, A Chong, M Hallschmid, S Aczel, S Hulme, N Islam, M Hosoi, P M Ternan, P Di Bartolo, N Bishara, T Shibasaki, Martin A. Osterhoff, Im S-S., M Jecht, T Hamaguchi, S Mattera, K Ways, Elizabeth Northam, U Rajala, Reinhard W. Holl, L Yang, S Panaiotopoulos, K Horvath, R Kluge, Thora B. Bodvarsdottir, Y Dong, Irene Alemanno, C McDougall, Reimar W. Thomsen, M Campbell, W Rabl, John Öhrvik, Yuichiro Yamada, Paola Ungaro, W Benzer, Mike Sampson, Roberto Trevisan, R G Radu, Aas A-M., P E Lobo, Ricardo Scott, S M Son, Josephine M. Forbes, T A Hillier, K L Wyne, Louis L. Nguyen, J Farmer, M H Tan, Kwon H-S., J Yang, L Sandvik, Franco Folli, A K Jenum, M Nguyen, W Pratipanawatr, A L Frederiksen, Rebecca Smith, Lee H-J., A Schäfer, C Manuelli, G S Denver, T Vukovich, B Maceira, K Matsumoto, K. Chokkalingam, Nurcan Üçeyler, P Modi, Timothy M. Morgan, S Mertens, B M Singh, Michaela Riedl, K Iso, C Cucurullo, G. F. Bottazzo, M Calvani, K Hur, J Wetzels, Kazuhiro Takahashi, Y Aso, H Stammer, M G Masding, Fitsum Guebre-Egziabher, J L González-Sánchez, L Armstrong, Alberto Maran, Peter G.F. Swift, S S Popovic, J Starczynski, E Vitacolonna, Luigi Laviola, R W Gelling, Marina Cardellini, D Barilla, Rosa de Diego Martínez, W H Landschulz, Anne Mette Rosenfalck, R K Wong, Kevin E. Schneider, K Peros, Giuseppe Nanni, F Zhang, I Rákóczi, T Iburi, M Nakhjavani, X Q Zhang, S Tournis, Per Lav Madsen, Graham A. Hitman, A. Tura, K Laubner, N D Kostic, Lawrence M. Dolan, R. Sinha Roy, J A Wagner, J. Tuomilehto, J Hauptman, M Abdel-Ghany, D Lacombe, Toralph Ruge, Johannes A Maassen, Triantafyllos Didangelos, K Sasaki, I Argüelles, Klaus Levin, C Popow, Emanuel Christ, R Chetty, L Baillet-Blanco, Jo-Ann Salmon, T Mine, James L. Trevaskis, I Franke, J Gorski, E A Andrianova, A Dayan, A Caballero, Aleksandra Gilis-Januszewska, M Yasujima, Z Kasalová, C.D.A. Stehouwer, F. K. Gorus, G A Nichols, A Glowania, David P. Strachan, P Fredlund, N. F. da Silva, P Reboldi, M Sausbier, K H Groenier, G Stuccio, N Guttman, K R Ahmed, A D Ristic, T Kapellen, J Coutcher, Aldo V. Greco, Oswald Wagner, A Zagayko, Maria Alevizaki, B B Zhang, W F Ferris, Jenny Fredriksson, Lois Jovanovic, J Hänninen, R De Giglio, Kazuo Yagui, O Potterat, P Hamliton, R E Scranton, B Mankovsky, A Stylianou, B Fellström, Abdel-Wahab Yha., M Kitagawa, Katherine L. Baldock, F R Johnson, F Baigts, S D'Addato, F J Sanz, A Mistry, S D Wise, T Pratipanawatr, U R Fölsch, James R.C. Parkinson, Claudia Sommer, C Park, F E Griffiths, M L Martí, R Demirtunc, S Taniguchi, J Lundkvist, T Siegmund, Juan Sztajzel, C Dienesch, F Baumgartner, L Scalone, T M Mckolanis, K Otake, Ullrik Pedersen-Bjergaard, T M Vriesendorp, Michael B. Wheeler, Henry Schmitt, Peter Hovind, S Lange, Stephane Roze, L. Van Gaal, B Klaproth, Anthony E. Civitarese, D Eckland, A Dagar, D F Hopkins, Kari Stefansson, C Gonzalez-Yanes, B Meyboom-de Jong, D. J. Betteridge, K Buhling, M Crepaldi, Ana M. Wägner, L Renna, L Volpe, R McBride, V Corbo, E O Brennesvik, R P Hayes, R Abdollahnia, G Viviani, C F Liew, Francisco Pérez-Bravo, Jeffrey Baron, Brian M. Frier, H H Samira, D Szentendrei, K. J. Schjoedt, W K Waldhäusl, D Gniuli, D Zou, G Tschank, V Urbančič, A L Nolan, Albertini J-P., J Malcomson, M Larbig, C Cheyssac, K Aurich, C M Kesson, S Heller, Maija E. Miettinen, R F Luco, Adrian J. Cameron, Luigi Mattiello, Z. Metelko, X E Zhang, M Parramón, I. G. Obrosova, J Fruchart, M Ilic, Björn Eliasson, Gilles Chatellier, M A Martín, D M Kendall, Holger Luthman, V F Varillas, D Maccubbin, Jang S-A., Amalia Gastaldelli, E Salzsieder, P. de Mol, A Yoshida, H D Lindner, D Gostiljac, M Just, Pan C-Y., J M Fujitaki, G Eiermann, K Bergenheim, A D Frick, A Agacdiken, K Varytimiadis, K Cseh, D A Jackson, S Calderari, Dena G. Hernandez, H M Liebich, K Min, F. de Zegher, Bernd Kulzer, K Han, Ulrich A. Müller, D Marrero, H Hatakeyama, René Koopman, Doo H-K., Petr Wohl, P. Sharp, P Forder, Thor Aspelund, N Meneveau, R M Schmülling, R Aubert, Thom Sam., H Youshikawa, M Ankelo, D Bowden, I Kelly, Frédéric Fumeron, M Sartini, Robert S. Sherwin, L Varadhan, A Criscimanna, John Betteridge, V Jelic, M Bartnik, N Lemke, B Ursø, A Bertoldo, A M Owona, H Okochi, L Pérez-Tamajó, S L Monfre, Daniel Brandhorst, K T Legg, Andries J. Smit, Veronica Sancho, Masashi Hirai, C Klein, Paul J. Thornalley, A Chaidaroglou, K Miura, B Zinman, O M Dvoynishnikova, J Plank, Jan Bolinder, C Lush, B Rubi, R Pozzilli, M Bashir, S A Shtandel, F Mosca, A Naskalska, Josef Vcelak, U Sausbier, P Cavaiani, T U Baehring, Michele Solimena, P Formisano, M Rastaldi, Bernard Thorens, J Ruzzin, E Arbit, M. Hori, Torkel B. Brismar, E Soltes Rak, A Filo, P Heinke, Matthew P. Coghlan, M Masotti, I Perevozskaya, K Ahn, I Moules, K Van Dyck, I Goldstein, Z Mathe, G Z Zhao, S Fajardo, J Taylor, S Chrul, J C Pareja, D Hadjidakis, A J Scheen, N Siddiqua, D C Cavan, R Grella, Krabbe S, H J Rochlitz, A E Hinkkanen, W Wilpshaar, Richard Stevens, M Dreyer, S Hara, X Wang, Melania Manco, D Gillen, Magalie A. Ravier, Olli Simell, John C. Lawrence, Kohnert K-D., Agardh C-D., A Berghold, L Kristensen, Grant Sfa., N Gursoy, Leif Groop, N Freemantle, Anja Schweizer, L Pala, Legros J-J., C. Di Pietro, N. Yamamoto, J Magyar, B Nikolovski, H Ikeda, D Lee, Bruce A. Buckingham, A O Wollitzer, I Kennedy, C Ernest, Neville H. McClenaghan, S Tanaka, Asimina Mitrakou, T Heinze, W Kerner, Moeenaldeen Al-Sayed, Charles Thivolet, L Klaff, A Miconi, Cristina Valeri, J. O. Christensen, K. Ekberg, A Jardine, T Endo, X Zhang, D F Child, A Kienitz, D K Seidel, H. Tada, Sylvie Abouna, Cyrus Cooper, Catherine R Chittleborough, Roberta Assaloni, S Corbi, A K Bose, K Ozawa, C Ahn, K A Deans, G Jackowski, Martin Gibson, Patrick McElduff, O A Mojiminiyi, Manuel Serrano-Ríos, O Dupuy, A L Davydov, Iwar Klimes, Sten-Anders Ivarsson, N Ichino, R Matsutomo, E R Smith, A Stefanovska, B Dehmel, K Koniavitou, E Agascioglu, M Hatazaki, J. M. Gibson, T Yada, P Ribaux, M Rupnik, K Fridell, G Scutaru, L Chugunova, Henrietta Mulnier, A Kendereski, H Lehnert, C Billi, M Sobczak, Francisco M-Mj., L K Archibald, S Sukumvanich, David B. Dunger, I. Benke, G Yillar, N Stingemore, J. M. Boavida, Y Shi, Jimmy D. Bell, L Bozzetto, Andrew J. Ahmann, E Jebens, J Keiding, Elena Henkel, Mark Fineman, J F McRae, Carol Forsblom, S Martemucci, Lourdes Ibáñez, P G Prieto, L Ringholm Nielsen, S Pratas, B von Stritzky, Julio Rosenstock, Lee K-W., J Stocks, L J Strow, I Samarguliani, L Wennekes, R Cheung, Abhishek Nag, Roberto Gambino, Y Suleymanoglu, E Murphy, T T Durck, M F Peyrot, Y Unno, Alexander Mayorov, Eleuterio Ferrannini, D. C. Rao, D Neely, H Karunajeewa, J Palmisano, Julia B. Lewis, M Ravid, G Pons, E Junca, P Vexiau, S Sailesh, D K Miloslavskiy, O N Bondarenko, U Smith, S Torri, Constantine Tsigos, Cesario Bianchi, Mattia Locatelli, D Jaquet, Virpi Lindi, M Moroi, M E Tushuizen, P Pelicci, R Scognamiglio, Pal Pacher, S M Thyssen, A Péterfalvi, Y Ho, S Guntram, L Romics, T Nakagami, Clive S. Cockram, Irina Kowalska, K Brodbeck, Gojka Roglic, J. Dörig, Lise Tarnow, Therese Tillin, A López-Alba, Martin Krššák, Moses Elisaf, S Hata, D P Snoeck, D Schmoll, O V Udovichenko, A Scaramuzza, J Paul, John H. 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Lyu, G Rizzo, V V Bogomolov, N Krasova, G M McGuire, Tina Parkner, A Timi, Johann Bauersachs, S Foussas, S A Schreiber, T Monauni, Schwarz Peh., Allenberg, J D Lee, S Dewan, Y G Zheng, D Carroll, E Sarti, C Wollheim, Anna Kaminski, C Menneila, P Bucher, Xu Jyu., Vincent Rigalleau, A Schöpfer, Hans Jörnvall, A Ben Drief, X Jeunemaitre, E Schuster, Chan Slf., S Bilgic, J Coverly, K Szafraniec, Stalenhoef Afh., H Bergert, David I. W. Phillips, J Maksimovic Pavlovic, Sergio E. Starkstein, E Chaim, T Lehmann-Lintz, P Salacone, Tim Armstrong, Ingrid Klöting, C M Frampton, Franco Cavalot, A.K.Azad Khan, H Rose, Marta Letizia Hribal, Jette Kolding Kristensen, H Gröbe, M Nishi, A Vanderplas, Howlett Hsc., L E Bowen, R Malik, A Wu, Charles C. Richardson, Y Li, P G McNally, Yoon K-H., A Baleydier, M J Murphy, P. M. Nilsson, U Lindblad, Sten Madsbad, T Bíró, Riitta Veijola, Charlotte Glümer, Assunta Pandolfi, Lydia Aguilar-Bryan, M Namba, C Franzen, S Lopatriello, David Russel Jones, S. 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Jeffcoate, J Pariès, K Huoponen, Anne Jörns, G Shanmugam, A Tsiavou, S Yoshida, Kim M-J., Annapaula Giulietti, S Paillasson, K Tsuchiya, Divyen K Shah, P Saar, S S Juarez, Stefanie Maxion-Bergemann, J Briody, V Schmitz, C M Pena, J Fernádez-Real, S Naruse, M Kalis, A P Klimenko, X H Chen, H.H. Lervang, G Bock, Mirja Tiikkainen, J Potockova, N Pekcanli, George Dragicevic, Timothy M. Rose, David C. Goff, H Komori, V Vasseur-Delannoy, S Hanley, P Hajos, C W Ahn, Matsuoka T-A., J Burns, Petar M. Seferovic, Yuki Kita, K Lyons, K Kohri, Eleftheria Zeggini, Y Ding, G Belcher, Steven V. Edelman, N Dinççaǧ, Christopher J. Rhodes, Manders Rjf., S Giveon, Dario Iafusco, L Li, M C Ribaudo, Kang S-K., Laurie J. Goodyear, L Martinez, C Vermigli, H Dabire, R Raymond, J de Haan, Christopher J. Groves, Å Norberg, H Jahr, M Gloster, Christopher D. 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Leon, Alberti Gkm., A Opel, S Kokkoris, S B Hong, Philippe Courtois, L Haque, Maria Sörhede Winzell, M C Beauvois, A Szypowska, D Yu, M Gutniak, D Petzinna, B Isomaa, K S Prickett, Maria Felice Brizzi, Pavel Hamet, P J Hammond, K. F. Michelmore, Yumie Takeshita, N Hariharan, Corrado M. Cilio, G Pogatsa, W G Jerome, E Bartley, K Schlembacher, G Blohmó, Guy A. Rutter, Kyung Mook Choi, S. C Tamer, Felix K. Assah, K A Jandeleit-Dahm, M Chan, H Darius, Jørgen F. P. Wojtaszewski, A Papazisi, M Amaya, A Knopff, M Tadayyon, I J Kim, W Russ, T Myrnäs, M. Tryon, S Poonsatha, Noel Cameron, Kim M-H., Alejandra Tomas, F Homo-Dekarche, G. Di Cianni, M Stotzka, C Solimine, Mikhail Borisovich Antsiferov, H Naserke, M Bianchi-Biscay, J I Lara, Moon C-K., Alain Ktorza, Alison N. Jeffery, V Lilla, Eun Seok Kang, Hanley Ajg., J Widder, R Ratner, C Goretti, P J Weston, J Perkins, V Rasmussen, M Evans, T M Gibson, A Jaffe, S I Chisalita, C Owman, L Hiltunen, E Kakishita, C M Mack, H C Potter, M Femerling, M Desai, M Soinio, K Yang, Patricia L. Brubaker, M Meyer, V Dy, J Berden, R Komers, Milos Adamec, R Petzoldt, Alan G. Robinson, R Stevens, A Doi, A Leunda, Eduard Montanya, Alessandra K Cardozo, N Kraenkel, Claudio Cobelli, U A Mueller, S Yamashiro, B R Gedulin, G Francisco, J Dennenmoser, Lesch K-P., Martin G. Bischof, M Ichita, C Fernandes, Jochen Hampe, S Kern, D Kelly, E Zeender, P Perna, J D Best, A C Calkin, Vivian Fonseca, J Prestle, D G Parkes, Satish K. Garg, T Burrell, B M Fischer, D Kruger, J S Skinner, Lin T-M., Jozef Ukropec, Maria Jeziorska, K Arii, David D. D’Alessio, M B Gomes, L Quandt, I Fragaki, M C Brindisi, A Gladkih, E Kitsou, S Di Cola, T Iwasaki, Peter Diem, T Lakka, V V Popova, G Lee, Hannah J. 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Cavanagh, Allen Taylor, M Balabolkin, G Schreier, E Stern, J Lips, V Serban, G Sparacino, Roser Casamitjana, Aine McKillop, I Groza, E Bernal, Kathleen M Gillespie, T Ledet, A Garzaniti, F Hawkins, K M Tushaus, C Renaudin, Christina Maier, A Dormi, A Ubertalli, Inge Tetens, M Ostojic, E Pierre-Justin, A Bhushan, E Ur, L I Jeltova, Tilo Moede, E Tibiriça, Zoran Gucev, Knoch K-P., G Pizzolanti, A M Şengül, T P Degenhardt, Cristina Lencioni, M Fitchet, E Santini, E Devangelio, C Panaite, Y I Karachentsev, S B Solerte, Christos Manes, M Lipka, C H Teng, P Mrak, G Fegan, R C Milton, M Negrean, Astrid Plamboeck, L Patti, M Houk, Ritva Kauppinen-Mäkelin, Christoph F Ebenbichler, O Sysoyeva, Frantisek Saudek, H Wysocki, Robert A. Rizza, J Altirriba, Bjørn Richelsen, L. Lam, Rémy Burcelin, A Antsaklis, G Galimberti, R. de Vries, A Lewin, Marcia A. 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Vingrys, S Habu, Mariella Trovati, H Sobajima, Pierre Lecomte, Kim T-H., D Virsaladze, M Oprean, F Pullen, A Rußmann, G J Bruining, Martina Düfer, Wen Xu, Min Y-K., Norman E Cameron, Gianfranco Pagano, K Harley, M Su, J P Le Berre, Sian Ellard, S Howard, D Russell-Jones, Z Li, S Carpenter, E L Thomas, W Tang, Lee M-S., N Ubrich, M. M. McMahon, G Vassilikos, N Brossa, M S Joergensen, S Smith, A Vania, Y Laurent, S Basir, A Freudenthaler, Sally M. Marshall, D Niedermayer, V I Pankiv, J Mentel, S Pruna, J M Pou Torelló, Y Ito, G Chrysos, Werner Kramer, Hironori Yamasaki, L Bowman, F Palumbo, P Ruth, G Lankas, Z H Liao, D Park, W Otter, C Montrone, Sevasti Zervou, Jennifer L. Wilkinson-Berka, Bo Feldt-Rasmussen, I Banu, Paolo Sbraccia, Bani Mukhopadhyay, Mark E. Cooper, M Kidron, Pål R. Njølstad, A M Jonsdottir, M R Burge, G Valpiani, Yutaka Oiso, David J. 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Jensen, G, Fisher, A, Petrovsky, N, Srikusalanukul, W, Budge, M, Trifunovic zamaklar, D, Zivkovic, M, Jelic, V, Vukomanovic, G, Ristic, A, Seferovic, P, Costa, J, Duarte, S, Manley, S, Sailesh, S, Venkataraman, A, Haider, Y, Groza, I, Oprean, M, Ardelean, A, Morosanu, A, Darkow, T, Vanderplas, A, Mamas, M, Mcelduff, P, Burns, J, Edwards, R, Fitchet, A, Young, R, Gibson, J, Lichiardopol, R, Niculescu, N, Totora, A, Pencea, C, Tomescu, I, Cinteza, M, Manicardi, V, Coscelli, C, Navazio, A, Catellani, E, Michelini, M, Dall'Asta, D, Guberti, A, Piazza, A, Gasparini, E, Pantaleoni, M, Guiducci, U, Manari, A, Sejil, S, Janand delenne, B, Avierinos, J, Habib, G, Labastie, N, Vague, P, Lassmann vague, V, Luźniak, P, Tatoń, J, Wojciechowska Luźniak, A, Zairis, M, Lyras, A, Patsourakos, N, Tsirimbis, V, Foussas, S, Lupón, J, Urrutia, A, Herreros, J, González, B, Coll, R, Altimir, S, Prats, M, Valle, V, Abreu padí, C, Rábago, G, Ivanova, L, Brasacchio, D, Harno, E, Keenan, A, Li, H, Lu, Z, Ke, L, Liu, H, Jeong, I, Chae, M, Choi, M, Yoo, H, Kim, C, Yun, M, Na, M, Kang, Y, Kong, O, Son, S, Kim, I, Tanaka, N, Hosoi, M, Matsuyama, Y, Fukumoto, M, Yamakita, T, Yoshioka, K, Ishii, T, Sato, T, Fujii, S, Aoki, T, Shibata, T, Mizutani, N, Suzuki, J, Fowelin, J, Samuelsson, P, Brandrup wogsen, G, Okumura, K, Tokmakova, A, Staroverova, D, Antcieferov, M, Shutichina, I, Kuntchevich, G, Vriesendorp, T, Morélis, Q, Legemate, D, Schaper, F, Mainas, E, Gkioulmpasanis, I, Panagiotou, I, Vassilikos, G, Skorda, L, Sidira, M, Christoforidou, M, Alaveras, A, Artikis, V, Evdemon, E, Lechleitner, M, Koch, T, Ebenbichler, C, Sturm, W, Moretti, L, Moruzzo, D, Boldrini, E, Pandolfo, C, Kameyama, M, Iwasa, R, Cho, M, Nam, J, Huh, K, Kaplar, M, Paragh, G, Erdei, A, Csongradi, E, Garai, I, Varga, J, Galuska, L, Udvardy, M, Higa, M, Kaneko, Y, Hiroi, N, Koziarska, D, Nowacki, P, Majkowska, L, Luzniak, P, Wojciechowska luźniak, A, Tushuizen, M, Nieuwland, R, Snoeck, D, Sturk, A, Diamant, M, Aguiar, L, Bahia, 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D, Torjesen, P, Kilhovd, B, Berg, T, Sandvik, L, Hanssen, K, Mentink, C, Donchenko, G, Stepanenko, S, Maingrette, F, Deng, H, Lindenmair, A, Freudenthaler, A, Baumgartner parzer, S, Nizheradze, K, Khoruzhenko, A, Tronko, N, Sheu, W, Ou, H, Shen, H, Lin, T, Wu, H, Yang, C, Mogylnytska, L, Schmoelzer, I, Davies, J, Band, M, Struthers, A, Prázný, M, Škrha, J, Kasalová, Z, Neelotpol, S, Jahan, P, Kauschke, S, Harrop, C, Schäfer, A, Widder, J, Eigenthaler, M, Walter, U, Uchimura, I, Ikebukuro, M, Kaibara, M, Hirata, M, Helal, R, Pervin, F, Yang, X, Jansson, P, Nagaev, I, Jack, M, Carvalho, E, Sunnerhagen, K, Cam, M, Cushman, S, Smith, U, Creely, S, Farmer, J, Gustafson, B, Kusminski, C, Krusinova, E, Wohl, P, Klementova, M, Lanska, V, Mcdougall, C, Kelly, I, Abbas, Z, Lutale, J, Archibald, L, Karunajeewa, H, Stingemore, N, Stuccio, G, Mcgechie, D, Muller, L, Hak, E, Goudzwaard, W, Montorsi, F, Homering, M, Sprenger, K, Goldstein, I, Asnaghi, V, Ferrari, G, Rastaldi, M, Gabellini, D, Dell'Antonio, G, Maestroni, A, Ruggieri, D, Luzi, L, Piemonti, L, Zerbini, G, Anafaroglu, I, Tutuncu, N, Sultana, M, Siddiqua, N, Iwasaki, T, Nakajima, A, Yoneda, M, Mukasa, K, Tanaka, S, and Sekihara, H
Subjects: 0303 health sciences, medicine.medical_specialty, business.industry, EASD, Endocrinology, Diabetes and Metabolism, Human physiology, medicine.disease, 03 medical and health sciences, 0302 clinical medicine, Diabetes mellitus, Family medicine, Internal Medicine, Medicine, business, 030217 neurology & neurosurgery, 030304 developmental biology
Published: 2004

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