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An epitaxial ternary phase on GaSb(111) and (001) are formed by the interaction of a nickel thin film with a GaSb substrate. This ternary phase is not in equilibrium with GaSb and the mixture of grains of Ni2Ga3 and Ni2Ga0.25Sb1.75 are obtained by an increased interaction of the substrates. Ni-Ga-Sb phase diagram is determined experimentally to explain interfacial reaction of Ni contacts on GaSb. Three equivalent systems Ni/GaAs, Ni/AlAs and Ni/GaSb are compared.

ErSb(001) single crystal layers are grown on GaSb(001) substrates and investigated by the reflection high-energy electron diffraction method. The diffraction patterns exhibit a 4 by 4 surface reconstruction. Low room temperature resistivity is exhibited by the ErSb crystal layers grown on the GaSb substrates.

Molecular beam epitaxy is used to develop single YbSb2 crystal films on GaSb. YbSb2 films have a resistivity of 40 microomega and show metallic characteristics. Orientation of the Sb dangling bonds on the surface of GaSb affects the direction of the YbSb2 films. The influence of the lattice mismatches in the direction of growth and in the basal plane.

Focuses on a study which investigated solid-state interdiffusions at the Ni/GaSb(111) and (001) interfaces. Background to the study; Experimental procedure; Results and discussion.

Presents information on a study which examined the structural perfection of the semi-insulating double-doped LEC-growtn InP substrates using x-ray double-crystal diffractometry method. Determination of the variations in lattice-plane spacings and lattice-plane orientations induced by gallium inhomogeneity; Samples and experiments; Results and discussion; Conclusions.

Focuses on a study which demonstrated the growth of erbium antimony (001) single crystal layers on gallium antimony (001) substrates. Growth and characterization of erbium antimony/gallium antimony (001) heterostructures; Growth characteristics of gallium arsenide; Superlattices of erbium antimony and gallium antimony.

Deals with the growth by molecular beam epitaxy of YbSb[sub2] (010) single crystal films on GaSb(001). Characteristics of YbSb[sub2] films; Effects of lattice mismatches on basal plane and growth direction of the crystal films; Causes of defect nucleation in gallium arsenide overgrown layers.

Presents information on a study which investigated the solid-state interactions of nickel thin films on (111) gallium arsenide and (111) AlAs using transmission electron microscopy. Characteristics of the samples; Results and discussion; Conclusions.

Presents a study that investigated the solid-state interactions at the nickel/gallium arsenide interfaces. Application of the Rutherford backscattering spectrometry; Analysis of X-ray diffraction; Assessment of the sheet resistance measurement results.

Metallic layers of ErP0.6As0.4 have been grown by molecular beam epitaxy on GaAs at 500 °C. The growth has been achieved by adjusting the PH3 and AsH3 flows to obtain a good lattice match to the substrate, the erbium flux remaining below the flux of the V elements. The 10–100 nm thick epitaxial layers reproducibly showed lattice mismatch below 5×10-4 and unlike the ErAs layers, they do not degrade in the atmosphere. Due to its low resistivity (ρ=80 μΩ cm), this compound is an ideal candidate for the realization of epitaxial III-V semiconductor/metal/III-V semiconductor heterostructures. [ABSTRACT FROM AUTHOR]

InGaAs epitaxial layers have been doped with beryllium with concentrations ranging from 1016 to 5×1019 cm-3 as measured by secondary ion mass spectroscopy (SIMS). From electrical measurements we have observed that p-type layers presented a high degree of compensation, and for a doping level below 5×10-7 cm-3, they are often found to be n type. SIMS analysis shows that oxygen is responsible for such behavior. Beryllium doping leads to incorporation of a large amount of oxygen in the epitaxial layers. Investigations on the origin of oxygen incorporation show that it is extremely sensitive to the residual vacuum during the growth and can be reduced by decreasing arsenic pressure. [ABSTRACT FROM AUTHOR]