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Your search keyword '"Burdov, Vladimir A."' showing total 24 results
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24 results on '"Burdov, Vladimir A."'

1. Direct biexciton generation in Si nanocrystal by a single photon

Author

Fomichev, Sergey and Burdov, Vladimir

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

It has been shown theoretically that strong quantum confinement regime in Si nanocrystals promotes the highly efficient simultaneous excitation of two electron-hole pairs (biexciton) by a single photon. The rate (inverse lifetime) of biexciton generation has been calculated analytically as function of the nanocrystal radius. In contrast to the case of a nanocrystal formed of direct-band-gap semiconductor, the size-dependence of the rate in Si nanocrystal turns out to be sharp enough. At radii approaching a nanometer, the lifetime of biexciton generation falls into the nanosecond range., Comment: 9 pages, 3 figures

Published
2023

2. Exciton-photon interactions in semiconductor nanocrystals: {radiative transitions, non-radiative processes,} and environment effects

Author

Burdov, Vladimir A. and Vasilevskiy, Mikhail I.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

In this review we discuss several fundamental processes taking place in semiconductor nanocrystals (quantum dots, QDs) when their electron subsystem interacts with electromagnetic (EM) radiation. The physical phenomena of light emission and EM energy transfer from a QD exciton to other electronic systems such as neighbouring nanocrystals and polarisable 3D (semi-infinite dielectric or metal) and 2D (graphene) materials are considered. The cases of direct (II-VI) and indirect (silicon) band gap semiconductors are compared. We also cover the relevant non-radiative mechanisms such as the Auger process, electron capture on dangling bonds and interaction with phonons. The emphasis is on explaining the underlying physics and illustrating it with calculated and experimental results in a comprehensive, tutorial manner.

Published
2021
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3. Excitonic relaxation and transfer in semiconductor nanocrystals

Author

Burdov, Vladimir A.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Some basic radiative and non-radiative processes taking place in semiconductor nanocrystals are discussed, and rates of these processes are calculated. In particular, in the present review we explore both intra-crystallite processes, such as the photon emission, Auger recombination, phonon-assisted exciton relaxation, capture on surface defects, multi-exciton generation, and inter-crystallite processes realized through the exciton migration in ensembles of nanocrystals. Exciton transitions, creation, and annihilation accompanied by the photon and (or) phonon emission or absorption are considered from the point of view of their influence on the optical properties of nanocrystals., Comment: 10 pages, 6 figures

Published
2020

4. Fine Splitting of Electron States in Silicon Nanocrystal with a Hydrogen-like Shallow Donor

Author

Belyakov Vladimir and Burdov Vladimir

Subjects
Silicon nanocrystal, Donor, Energy spectrum, Fine splitting, Materials of engineering and construction. Mechanics of materials, TA401-492
Abstract

AbstractElectron structure of a silicon quantum dot doped with a shallow hydrogen-like donor has been calculated for the electron states above the optical gap. Within the framework of the envelope-function approach we have calculated the fine splitting of the ground sixfold degenerate electron state as a function of the donor position inside the quantum dot. Also, dependence of the wave functions and energies on the dot size was obtained.

Published
2007
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5. Radiative decay rates in Si crystallites with a donor ion.

Author

Derbenyova, Natalia V. and Burdov, Vladimir A.

Subjects
*SILICON crystallography, *LITHIUM ions, *DENSITY functional theory, *RADIATIVE transfer, *PHOSPHORUS
Abstract

Within the framework of the time-dependent density functional theory, the radiative recombination rates have been calculated for small, ∼ 1 nm in diameter, hydrogen-passivated silicon crystallites with a single lithium or phosphorus ion. Sharp increase of the radiative recombination rates with increasing temperature was revealed for the crystallites with the lithium ion. No temperature effect was found for the crystallites with the ion of P. It was also shown that the presence of ionized donors in Si crystallites can substantially accelerate the radiative decay compared to the case of pure crystallites. [ABSTRACT FROM AUTHOR]

Published
2018
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11. Effect of Doping with Shallow Donors on Radiative and Nonradiative Relaxation in Silicon Nanocrystals: Ab Initio Study

Author

Derbenyova, Natalia V. and Burdov, Vladimir A.

Abstract

Electronic structures of 1–2 nm in diameter hydrogen-passivated silicon nanocrystals and rates of the radiative interband transitions and Auger recombination were calculated on the basis of first-principles (DFT/TDDFT) methods for the nanocrystals doped with a single centrally located phosphorus or lithium atom. We have found a significant increase of the radiative recombination rates caused by the nanocrystals’ doping at room temperature. For the P-doped crystallites, this effect takes place at zero temperature as well, while the Li-doped crystallites (at least, some of them) demonstrate strong temperature dependence of the recombination rates, which drastically drop as the temperature decreases. The rates of the Auger recombination in the nanocrystals with Li, on the whole, turn out to be of the same order of magnitude as in the undoped nanocrystals. On the contrary, in the P-doped nanocrystals, the Auger process becomes considerably slower.

Published
2024
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12. Temperature dependence of the conduction electron g-factor in silicon: theory and experiment

Author

Konakov, Anton, Ezhevskii, Alexander, Soukhorukov, Andrey, Guseinov, Davud, Popkov, Sergey, and Burdov, Vladimir

Abstract

Temperature dependence of the conduction electron Lande g-factor in silicon has been investigated both theoretically and experimentally. Theoretical consideration is based on the renormalization of the electron energy in the magnetic field by the electron-phonon interaction in the second-order perturbation theory. Interaction with lattice vibrations decreases the conduction electron g-factor. The g-factor was measured in the electron spin resonance (ESR) experiments for n-Si samples. In the high temperature limit the g-factor linearly decreases with temperature in good agreement with the experimental data.

Published
2011

23. Temperature and donor concentration dependence of the conduction electron Lande g-factor in silicon.

Author

Konakov, Anton A., Ezhevskii, Alexander A., Soukhorukov, Andrey V., Guseinov, Davud V., Popkov, Sergey A., and Burdov, Vladimir A.

Subjects
CONDUCTION electrons, LANDE g-factor, SILICON, ELECTRON paramagnetic resonance, PHOSPHORUS, PERTURBATION theory, RENORMALIZATION (Physics)
Abstract

Temperature and donor concentration dependence of the conduction electron g-factor in silicon has been investigated both experimentally and theoretically. We performed electron spin resonance experiments on Si samples doped with different densities of phosphorus and lithium. Theoretical consideration is based on the renormalization of the electron energy in a weak magnetic field by the interaction with possible perturbing agents, such as phonons and impurity centers. In the second-order perturbation theory interaction of the electron subsystem with the lattice vibrations as well as ionized donors results in decreasing the conduction electron g-factor, which becomes almost linear function both of temperature and impurity concentration. [ABSTRACT FROM AUTHOR]

Published
2013
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