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Your search keyword '"Alizade, Elvin H."' showing total 10 results
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10 results on '"Alizade, Elvin H."'

2. Two-Channel Indirect-Gap Photoluminescence and Competition between the Conduction Band Valleys in Few-Layer MoS 2.

Author

Bayramov, Ayaz H., Bagiyev, Elnur A., Alizade, Elvin H., Jalilli, Javid N., Mamedov, Nazim T., Jahangirli, Zakir A., Asadullayeva, Saida G., Aliyeva, Yegana N., Cuscunà, Massimo, Lorenzo, Daniela, Esposito, Marco, Balestra, Gianluca, Simeone, Daniela, Tobaldi, David Maria, Abou-Ras, Daniel, and Schorr, Susan

Subjects
CONDUCTION bands, PHOTOLUMINESCENCE, DIELECTRIC function, THIN films, OPTICAL properties
Abstract

MoS2 is a two-dimensional layered transition metal dichalcogenide with unique electronic and optical properties. The fabrication of ultrathin MoS2 is vitally important, since interlayer interactions in its ultrathin varieties will become thickness-dependent, providing thickness-governed tunability and diverse applications of those properties. Unlike with a number of studies that have reported detailed information on direct bandgap emission from MoS2 monolayers, reliable experimental evidence for thickness-induced evolution or transformation of the indirect bandgap remains scarce. Here, the sulfurization of MoO3 thin films with nominal thicknesses of 30 nm, 5 nm and 3 nm was performed. All sulfurized samples were examined at room temperature with spectroscopic ellipsometry and photoluminescence spectroscopy to obtain information about their dielectric function and edge emission spectra. This investigation unveiled an indirect-to-indirect crossover between the transitions, associated with two different Λ and K valleys of the MoS2 conduction band, by thinning its thickness down to a few layers. [ABSTRACT FROM AUTHOR]

Published
2024
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3. Supplemental Material for Crystal structure and Raman-active lattice vibrations of magnetic topological insulators MnBi2Te4·n(Bi2Te3) (n=0, 1,⋯,6)

Author

Amiraslanov, I. R., Aliev, Ziya S., Askerova, P. A., Alizade, Elvin H., Aliyeva, Y. N., Abdullayev, Nadir A., Jahangirli, Zakir A., Otrokov, M. M., Mamedov, Nazim T., Chulkov, Eugene V., Amiraslanov, I. R., Aliev, Ziya S., Askerova, P. A., Alizade, Elvin H., Aliyeva, Y. N., Abdullayev, Nadir A., Jahangirli, Zakir A., Otrokov, M. M., Mamedov, Nazim T., and Chulkov, Eugene V.

Published
2022

4. Crystal structure and Raman-active lattice vibrations of magnetic topological insulators MnBi2Te4·n(Bi2Te3) (n=0, 1,⋯,6)

Author

The Scientific and Technological Research Council of Turkey, Agencia Estatal de Investigación (España), Ministerio de Ciencia, Innovación y Universidades (España), Saint Petersburg State University, Amiraslanov, I. R., Aliev, Ziya S., Askerova, P. A., Alizade, Elvin H., Aliyeva, Y. N., Abdullayev, Nadir A., Jahangirli, Zakir A., Otrokov, M. M., Mamedov, Nazim T., Chulkov, Eugene V., The Scientific and Technological Research Council of Turkey, Agencia Estatal de Investigación (España), Ministerio de Ciencia, Innovación y Universidades (España), Saint Petersburg State University, Amiraslanov, I. R., Aliev, Ziya S., Askerova, P. A., Alizade, Elvin H., Aliyeva, Y. N., Abdullayev, Nadir A., Jahangirli, Zakir A., Otrokov, M. M., Mamedov, Nazim T., and Chulkov, Eugene V.

Abstract

Further to the structure of the intrinsic magnetic topological insulators MnBi2Te4⋅n(Bi2Te3) with n<4, where index n is the number of quintuple Te-Bi-Te-Bi-Te building blocks inserted between the neighboring septuple Te-Bi-Te-Mn-Te-Bi-Te building blocks, the structure of the members with n=4, 5, and 6 was studied using x-ray powder diffraction. The unit-cell parameters and atomic positions were obtained. The obtained and available structural data were summarized to show that the crystal structure of all members of MnBi2Te4⋅n(Bi2Te3) follows the cubic close-packing principle, independently of the space group of the given member. Confocal Raman spectroscopy was then applied. Comparative analysis of the number, frequency, symmetry, and broadening of the vibration modes responsible for the lines in the Raman spectra of the systems with n=1,…,6, as well as MnBi2Te4(n=0) and Bi2Te3 (n=∞) has shown that lattice dynamics of MnBi2Te4⋅n(Bi2Te3) with n>0 overwhelmingly dominates by the cooperative atomic displacements in the quintuple building blocks.

Published
2022

5. Crystal structure and Raman-active lattice vibrations of magnetic topological insulators MnBi2Te4·n(Bi2Te3) (n=0, 1,⋯,6)

Author

Amiraslanov, I. R., Aliev, Ziya S., Askerova, P. A., Alizade, Elvin H., Aliyeva, Y. N., Abdullayev, Nadir A., Jahangirli, Zakir A., Otrokov, M. M., Mamedov, Nazim T., Chulkov, Eugene V., The Scientific and Technological Research Council of Turkey, Agencia Estatal de Investigación (España), Ministerio de Ciencia, Innovación y Universidades (España), and Saint Petersburg State University

Abstract

Further to the structure of the intrinsic magnetic topological insulators MnBi2Te4⋅n(Bi2Te3) with n0 overwhelmingly dominates by the cooperative atomic displacements in the quintuple building blocks., This work was performed within the research program “Development of preparation technology of multifunctional convertors based on nanosized structures” and was supported by TÜBITAK- ANAS Project No. 120N296. M.M.O. acknowledges the support by Spanish Ministerio de Ciencia e Innovación (Grant No. PID2019-103910GB-100). E.V.C. acknowledges support from Saint Petersburg State University (Project ID No. 90383050).

Published
2022

6. Electronic structure and dielectric function of Mn-Bi-Te layered compounds

Author

Science Development Foundation under the President of the Republic of Azerbaijan, Russian Foundation for Basic Research, Eusko Jaurlaritza, Ministerio de Economía y Competitividad (España), Saint Petersburg State University, Diputación Foral de Gipuzkoa, Jahangirli, Zakir A., Alizade, Elvin H., Aliev, Ziya S., Otrokov, M. M., Ismayilova, Narmin A., Mammadov, Samir N., Amiraslanov, I. R., Mamedov, Nazim T., Orudjev, Guseyn, Babanly, M. B., Shikin, Alexander M., Chulkov, Eugene V., Science Development Foundation under the President of the Republic of Azerbaijan, Russian Foundation for Basic Research, Eusko Jaurlaritza, Ministerio de Economía y Competitividad (España), Saint Petersburg State University, Diputación Foral de Gipuzkoa, Jahangirli, Zakir A., Alizade, Elvin H., Aliev, Ziya S., Otrokov, M. M., Ismayilova, Narmin A., Mammadov, Samir N., Amiraslanov, I. R., Mamedov, Nazim T., Orudjev, Guseyn, Babanly, M. B., Shikin, Alexander M., and Chulkov, Eugene V.

Abstract

A comparative study of the electronic and optical properties of Mn-Bi-Te layered compounds was carried out using spectroscopic ellipsometry (SE) over a photon energy range of 0.7-6.5 eV at room temperature and density functional theory (DFT)-based first-principle calculations within the general gradient approximation with Hubbard like correction (GGA+U) and allowance for a spin-orbital coupling. The total energies of the above compounds in ferromagnetic (FM) and antiferromagnetic (AFM) spin configurations are obtained by taking the long-range van der Waals interaction into account. The stability of the AFM state of MnBiTe and MnBiTe over the corresponding FM counterpart is disclosed. The SE-based and calculated dielectric functions are compared. It is shown that interband optical transitions in the accessed photon energy range mainly occur between Mn 3d + Te 5p states of the valence band and Bi 6p + Te 5p with a small admixture of Mn 3d states of the conduction band.

Published
2019

7. Infrared spectroscopic ellipsometry and optical spectroscopy of plasmons in classic 3D topological insulators

Author

Science Development Foundation under the President of the Republic of Azerbaijan, Russian Foundation for Basic Research, Saint Petersburg State University, Mamedov, Nazim T., Alizade, Elvin H., Jahangirli, Zakir A., Aliev, Ziya S., Abdullayev, Nadir A., Mammadov, Samir N., Amiraslanov, I. R., Shim, Yong-Gu, Wakita, Kazuki, Ragimov, Sadiyar S., Bayramov, Ayaz I., Babanly, M. B., Shikin, Alexander M., Chulkov, Eugene V., Science Development Foundation under the President of the Republic of Azerbaijan, Russian Foundation for Basic Research, Saint Petersburg State University, Mamedov, Nazim T., Alizade, Elvin H., Jahangirli, Zakir A., Aliev, Ziya S., Abdullayev, Nadir A., Mammadov, Samir N., Amiraslanov, I. R., Shim, Yong-Gu, Wakita, Kazuki, Ragimov, Sadiyar S., Bayramov, Ayaz I., Babanly, M. B., Shikin, Alexander M., and Chulkov, Eugene V.

Abstract

Narrow bandgap BiSe, BiTe, and SbTe, commonly referred to as classic 3D topological insulators, were studied at room temperature by spectroscopic ellipsometry and optical reflection spectroscopy over the mid-IR-near-infrared photon energy range. Complementarily, Hall measurements were performed. Plasmons in optical loss function and reflection coefficient were identified. The conventional approach based on the high frequency dielectric constant was shown to work well in the description of plasmons in BiSe and SbTe and to fail in the case of a similar compound, BiTe. The obtained results are discussed in terms of single- and multivalley approaches to the studied samples with taking the details of the calculated band structure into account.

Published
2019

8. Electronic structure and dielectric function of Mn-Bi-Te layered compounds

Author

Jahangirli, Zakir A., primary, Alizade, Elvin H., additional, Aliev, Ziya S., additional, Otrokov, Mikhail M., additional, Ismayilova, Narmin A., additional, Mammadov, Samir N., additional, Amiraslanov, Imamaddin R., additional, Mamedov, Nazim T., additional, Orudjev, Guseyn S., additional, Babanly, Mahammad B., additional, Shikin, Alexander M., additional, and Chulkov, Evgueni V., additional

Published
2019
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9. Infrared spectroscopic ellipsometry and optical spectroscopy of plasmons in classic 3D topological insulators

Author

Mamedov, Nazim T., primary, Alizade, Elvin H., additional, Jahangirli, Zakir A., additional, Aliev, Ziya S., additional, Abdullayev, Nadir A., additional, Mammadov, Samir N., additional, Amiraslanov, Imamaddin R., additional, Shim, Yong-Gu, additional, Wakita, Kazuki, additional, Ragimov, Sadiyar S., additional, Bayramov, Ayaz I., additional, Babanly, Mahammad B., additional, Shikin, Alexander M., additional, and Chulkov, Evgueni V., additional

Published
2019
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10. Two-Channel Indirect-Gap Photoluminescence and Competition between the Conduction Band Valleys in Few-Layer MoS 2 .

Author

Bayramov AH, Bagiyev EA, Alizade EH, Jalilli JN, Mamedov NT, Jahangirli ZA, Asadullayeva SG, Aliyeva YN, Cuscunà M, Lorenzo D, Esposito M, Balestra G, Simeone D, Tobaldi DM, Abou-Ras D, and Schorr S

Abstract

MoS 2 is a two-dimensional layered transition metal dichalcogenide with unique electronic and optical properties. The fabrication of ultrathin MoS 2 is vitally important, since interlayer interactions in its ultrathin varieties will become thickness-dependent, providing thickness-governed tunability and diverse applications of those properties. Unlike with a number of studies that have reported detailed information on direct bandgap emission from MoS 2 monolayers, reliable experimental evidence for thickness-induced evolution or transformation of the indirect bandgap remains scarce. Here, the sulfurization of MoO 3 thin films with nominal thicknesses of 30 nm, 5 nm and 3 nm was performed. All sulfurized samples were examined at room temperature with spectroscopic ellipsometry and photoluminescence spectroscopy to obtain information about their dielectric function and edge emission spectra. This investigation unveiled an indirect-to-indirect crossover between the transitions, associated with two different Λ and K valleys of the MoS 2 conduction band, by thinning its thickness down to a few layers.

Published
2023
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