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Compared to the bulky ceramic counterparts, antiferroelectric (AFE) thin films exhibit higher energy-storage performance. It has been demonstrated that the performance of the AFE thin films is strongly affected by the thickness. However, possible changes in the phase structures and microstructures accompanied by varying thicknesses have been less known, which makes it hard to fully understand the physical insight of the thickness effect. Herein, we fabricate a series of PbZrO3 (PZ) thin films by chemical solution deposition whose thickness is approximately proportional to the number of deposition layers, i.e., one to four layers with each layer of about 60 nm in thickness. The detailed structural characterization has been performed by using x-ray diffraction, a scanning electron microscope, and a transmission electron microscope. The films are composed of nanorods oriented normal to the films in which each nanorod maintains single crystalline though segmented by the horizontal interfaces between each of the two neighboring layers, suggesting nearly perfect epitaxy during multilayer growth. The multidomain state is found in three-/four-layer PZ thin films while the one-/two-layer PZ films always present a monodomain state. Meanwhile, incommensurate phases with different modulation periods have been observed in the four-layer PZ films. By comparing the as-observed structural features with the measured electrical properties of different films, it seems that microstructural evolution with the film thickness should not be negligible in evaluating the structure–property relation of PZ-based thin films. [ABSTRACT FROM AUTHOR]

Bi0.5Na0.5TiO3‐based ceramics with high remnant polarization Pr have shown outstanding potential in the application of high‐power ferroelectric transducers. However, low depolarization temperature Td is an obstacle for their application. Here, a composition design strategy was proposed to simultaneously improve the Td and Pr in BNT‐based materials. Ultrahigh Pr of 40.56 µC/cm2 and relative high Td of 184°C were synergistically achieved in (Bi0.5Na0.5)(Ti0.995Mn0.005)O3 (BNMT) ceramics by adding 1.0 mol% BiGaO3 (BG), which is superior to other reported lead‐free systems. The excellent ferroelectric properties were attributed to strengthen ferroelectric order as evidenced by increased rhombohedral distortion. Meanwhile, the enhanced depolarization temperature, increasing from 168°C for x = 0% to 184°C for x = 1.0%, can be ascribed to the suppression of the thermal‐induced ferroelectric‐relaxor phase transition by adding BG. Those results enable the BNMT‐BG systems ceramics to be an attractive candidate for application in high‐power supplies. [ABSTRACT FROM AUTHOR]

The electric field (E) controlled magnetism in the multiferroic heterostructure comprising polycrystalline yttrium iron garnet (YIG) film, Pt electrodes, and lead magnesium niobate-lead zirconate titanate (PMN-PZT) ceramic is presented in this work. The electric-field-dependent magnetization and susceptibility of YIG film reveal the strain-mediated transformation of magnetocrystalline anisotropy. A strong converse magnetoelectric (CME) effect has been observed in the YIG/Pt/PMN-PZT/Pt heterostructure, and the CME coefficient can reach 17 × 10−8 s/m at 0 Oe and 4.2 kV/cm. The reversible magnetization switching by means of a low voltage pulse (±4.6 kV/cm) can be realized at 0 Oe in the YIG/Pt/PMN-PZT/Pt heterostructure, and the E-tunable susceptibility can reach Δχ/χ0+ = 55.5% at 20 Oe and 4 kV/cm. These results show great potential in power-efficient magnetoelectric components for information storage and tunable devices. [ABSTRACT FROM AUTHOR]

(Pb, La)(Zr, Ti)O3 antiferroelectric (AFE) materials are promising materials due to their energy‐storage density higher than 10 J cm−3, but their low energy‐storage efficiency and poor temperature stability limit their application. In this paper, the (1 − x)(Pb0.9175La0.055)(Zr0.975Ti0.025)O3–xPb(Yb1/2Nb1/2)O3 (PLZTYN100x) AFE ceramics were prepared via two‐step sintering method and investigated thoroughly. With the doping of Yb3+ and Nb5+, the phase structure transforms from the orthorhombic phase (AFEO) to the coexistence of the orthorhombic‐and‐tetragonal phases. This structure reduces the free energy difference between the AFE and ferroelectric phases and reduces the fluctuation of energy with temperature, improving the energy storage efficiency and temperature stability. When the x = 0.05 (PLZTYN5), the AFE ceramic exhibits excellent temperature stability and ultrahigh energy storage performance, whose recoverable energy density (Wrec) is 6.8–8.2 J cm−3 at 30 kV mm−1 in the temperature range from −55 to 75°C, and efficiency (ƞ) is 78%–86.7%. In addition, the change of Wrec is less than 15%, exceeding the performance of most AFE ceramics. The results demonstrate that the PLZTYN5 ceramic has great potential in pulse power capacitors. [ABSTRACT FROM AUTHOR]

A solid-state reaction process has been used to fabricate (SrxCa1−x)(Zr0.95Ti0.05)O3 (0 ≤ x ≤ 1) ceramics, and the crystal structure dependence of the microstructure and microwave dielectric properties has been investigated. The grain boundary migration is hindered and the grain size decreases with the increase of x. The crystal structure changes from the orthorhombic phase to the coexisting orthorhombic–cubic phase when x ≥ 0.55. A coherent phase interface is formed at the orthorhombic–cubic phase transition interface, indicating that the two phases have similar lattice structures and a slight mismatch in crystal cell parameters. The short-range ordered reconstructed superlattice structure is driven by the interface strain near the coherent phase interface. From x = 0.55 to x = 1, the Q × f values increase obviously, which indicates that the short-range ordered superlattice structure reduces the intrinsic loss of ceramics. The Raman spectra also verify the above deduction and show that the ceramics with reconstructed superlattices have smaller lattice vibration anharmonicity. Due to cubic phase regulating τf and reconstructed superlattice reducing dielectric loss, the SrZr0.95Ti0.05O3 (x = 1) sample has the best microwave dielectric properties with εr = 36.4, Q × f = 26 300 GHz, and τf = −2.5 ppm °C−1, and the Q × f value is twice as high as the maximum value (13 600 GHz) of pure SrZrO3 ceramics reported in the literature. This work not only provides a new option for low-cost and high-performance intermediate dielectric constant ceramics, but also proposes a new design method to improve the microwave dielectric properties of perovskite ceramics. [ABSTRACT FROM AUTHOR]

The artificial multiferroic heterostructure used in this work is composed by an yttrium iron garnet (YIG) film deposited by radio frequency (rf) magnetron sputtering on a metalized PMN-PZT ceramic. We demonstrate, thanks to the well-known converse magnetoelectric (CME) coupling, the control of the magnetic state of the YIG film by means of a low electric field applied to the PMN-PZT ceramic. In particular, it is shown that the variations of the magnetization induced by the strain are functions of the magnetic sate of the film. It is shown that the maximum amplitude variation is observed at the coercive magnetic field (Hc), whereas when H increases, the strain effect has a limited impact on the film magnetization. A second effect has also been remarked on the magnetization of the YIG film but only after the first strain induced cycle has been applied. These variations, observed only under low applied magnetic fields, can be attributed to the re-orientation of some magnetic moments which are easy to switch under low magnetic fields. We find that after poling the YIG film, i.e., applying a magnetic field on it, the initial state is restored. The CME coupling coefficient is determined for different magnetic states of the YIG film, and the maximum value 11 × 10−8 s/m is obtained at H = Hc and E = Ec (the coercive field of the PMN-PZT ceramic). The relative susceptibility tunability available for the heterostructure proposed is 16.8% for an electric field applied between 0 and −4 kV/cm. [ABSTRACT FROM AUTHOR]