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Your search keyword '"Orekhov, Andrey"' showing total 3 results
Start Over Author "Orekhov, Andrey" Topic x-ray diffraction Publication Year Range Last 50 years
3 results on '"Orekhov, Andrey"'

2. Superionic Conductor PbSnF4 in the Inner Channel of SWNT.

Author

Zakalyukin, Ruslan Mikhalovich, Levkevich, Ekaterina Alexandrovna, Kumskov, Andrey Sergeevich, and Orekhov, Andrey Sergeevich

Subjects
NANOCOMPOSITE materials, FLUORIDES, IONS, NANOSTRUCTURED materials, X-ray diffraction, SCANNING transmission electron microscopy
Abstract

The nanocomposite PbSnF4@SWNT was obtained by capillary technique for the first time. This nanocomposite was investigated using X-ray diffraction phase analysis (XRD), high-resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM), energy-dispersive X-ray spectroscopy (EDX). SWNT diameter is ~2 nm. Lead tetrafluorostannate (PbSnF4) monoclinic modification (space group P2/n) was identified by XRD analysis. The periodicity of the crystal plane (201) along the tube axis is ~3.2Å. The distortion of plane is 11° with respect to the nanotube axis. The model of PbSnF4 single crystal contains ~168 atoms. The structure of 1D PbSnF4@SWNT nanocomposite and HREM image were modelled. [ABSTRACT FROM AUTHOR]

Published
2018
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3. Low-temperature formation of platinum silicides on polycrystalline silicon.

Author

Chizh, Kirill V., Dubkov, Vladimir P., Senkov, Vyacheslav M., Pirshin, Igor V., Arapkina, Larisa V., Mironov, Sergey A., Orekhov, Andrey S., and Yuryev, Vladimir A.

Subjects
*POLYCRYSTALLINE silicon, *X-ray photoelectron spectroscopy, *MAGNETRON sputtering, *PLATINUM, *TRANSMISSION electron microscopy, *SILICIDES, *POLYCRYSTALLINE semiconductors, *PLATINUM electrodes
Abstract

Phase formation and transitions in platinum silicide films on polycrystalline Si in the process of Pt magnetron sputtering and heat treatments at different temperatures are studied using X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and X-ray diffractometry. Phases of amorphous and polycrystalline Pt 3 Si and Pt 2 Si are shown to form during the room-temperature Pt deposition on poly-Si beneath the Pt layer. The relaxation of the interfacial film and partial transformation of Pt 3 Si into Pt 2 Si occurs as a result of the thermal treatment for 30 min in the temperature range from 125°C to 300°С. The Pt 3 Si and Pt 2 Si phases crystallize to PtSi due to annealing at the temperatures from 320°C to 480°С for the same time period. Image 1 • Interface domain in magnetron sputtered and annealed Pt/poly-Si film is studied. • Pt 3 Si and Pt 2 Si phases form at room temperature during Pt deposition on poly-Si. • Interfacial film relaxation turns Pt 3 Si to Pt 2 Si due to annealing at 100 < T < 200 °C. • Pt 3 Si and Pt 2 Si transit to PtSi due to annealing at temperatures from 320 to 480 °C. • Pt 3 Si phase is detected up to the annealing temperature of 350 °C. [ABSTRACT FROM AUTHOR]

Published
2020
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