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Presents a study that proposed a structural model for the sulfur passivating layer on gallium arsenide (GaAs). Properties of sulfur layers deposited on GaAs; Preparation of the sample; Discussion on the results of the study.

Abstract: The adsorption of S2 on the Si(111)-(7×7) surface and the interaction of copper and sulfur on this sulfur-terminated Si(111) surface have been studied using synchrotron irradiation photoemission spectroscopy and scanning tunneling microscopy. The adsorption of S2 at room temperature results in the passivation of silicon dangling bonds of Si(111)-(7×7) surface. Excessive sulfur forms S n species on the surface. Copper atoms deposited at room temperature directly interact with S-adatoms through the formations of Cu–S bonds. Upon annealing the sample at 300°C, CuS x nanocrystals were produced on the sulfur-terminated Si(111) surface. [Copyright &y& Elsevier]