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Here, we used two elements Cu and Sb as the substitutes for Te in Ga2Te3 and observed a giant enhancement in thermoelectric figure of merit (ZT). This potential substituted Ga2Cu0.05SbxTe2.95-x (x = 0.2) gives the maximum ZT value of 0.5 at 700 K, more than 3 times as high as that of intrinsic Ga2Te3. The enhancement in ZT is attributed to the significantly reduced thermal conductivity caused mainly by the presence of Cu at Ga vacancy planes, and remarkably improved electrical conductivity by the occupation of Sb at Te sites, which increases the carrier concentration and conserves the high mobility. [ABSTRACT FROM AUTHOR]

Cu3SnS4 chalcogenide as a low‐cost, earth abundant thermoelectric material has recently attracted much attention. However, its Seebeck coefficient is rather low due to its metallic‐like behavior; therefore, substantial work is required to enhance its thermoelectric (TE) properties. In this work, an alternative method is proposed, that is, a regulation of the crystal structure through alloying with Cu3SbSe3. This regulation is realized by the incorporation of Sb and Se in the Cu3SnS4 host frame with an addition of Cu3SbSe3, thus altering the bond lengths (CuS and SnS) and bond angles (SCuS and SSnS), and leading to widening of the bandgap and the convergence of top valence bands. At the same time, the lattice thermal conductivity reduces by ≈50% at high temperatures, mainly triggered by the crystal structure distortion and introduced point defects. The approach of crystal structure regulation may help design the properties of other ternary CuSn(Sb)S(Se) compounds for TE applications. [ABSTRACT FROM AUTHOR]