1. Flicker noise comparison of direct conversion mixers using Schottky and HBT dioderings in SiGe:C BiCMOS technology
- Author
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Rasmus S. Michaelsen, Michele Squartecchia, Kjeld M. Tamborg, and Tom K. Johansen
- Subjects
Engineering ,diode connected HBT ,Electronic mixer ,flicker (1/f) noise ,Loss measurement ,Noise measurement ,Schottky diodes ,Noise (electronics) ,Mixers ,Frequency measurement ,Schottky diode ,Flicker noise ,Mixer ,Monolithic microwave integrated circuit ,Diode ,business.industry ,Components, Circuits, Devices and Systems ,Cutoff frequency ,General Topics for Engineers ,MMIC ,Optoelectronics ,business ,Fields, Waves and Electromagnetics ,Heterojunction bipolar transistors - Abstract
In this paper, we present flicker noise measurements of two X-band direct conversion mixers implemented in a SiGe:C BiCMOS technology. Both mixers use a ring structure with either Schottky diodes or diode-connected HBTs for double balanced operation. The mixers are packaged in a metal casing on an Arlon 25N substrate to shield the sensitive noise measurement. Conversion loss measurements of both mixers is performed both for on-wafer and packaged versions. The experimental results shows that the Schottky diode mixer exhibits a 1/f noise corner frequency of 250 kHz, while the diode connected HBT circuit demonstrates a 1/f noise corner frequency around 10 kHz.
- Published
- 2015