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Boron nitride nanotubes (BNNTs) are semiconductors with a wide band gap. In comparison with carbon nanotubes (CNTs), BNNTs have higher chemical stability, excellent mechanical properties and higher thermal conductivity. In this paper, we study the effect of diameters and substituting B and N atoms of various zigzag BNNTs with Al, on structural and electronic properties of BNNTs in solid state using the density functional theory method. The results of calculations of density of states and band structure (band) showed that the band gap between the valence and conduction level increases as a result of the enhancement of tube diameter of BNNTs. Finally, the results showed that the electronic properties of the pristine BNNTs can be improved by doping Al atom in the zigzag configuration of tubes. [ABSTRACT FROM AUTHOR]

In this paper, the carbon-doped boron nitride nanoplate (C-BNNP) was prepared by pyrolyzing the precursor under N 2 and served as an excellent adsorbent for removal of Rhodamine B (RhB). The structure and composition of C-BNNP were characterized and its adsorption behavior for RhB was investigated. Compared with boron nitride nanoplate (BNNP) which was synthesized under NH 3 , C-BNNP displayed an enhancement of the adsorption capacity for RhB (833 mg/g). The adsorption activity was comprehensibly studied by kinetics, isotherm and thermodynamics. The adsorption kinetics followed pseudo-second-order model. The equilibrium adsorption data agreed well with the Langmuir isotherm. And the thermodynamics indicated that the adsorption process was a spontaneous, exothermic and physisorption process. In addition, the density functional theory was proposed that doping carbon in the BNNP decreased the chemical hardness of the adsorbent and enhanced the adsorption capacity of C-BNNP for RhB. [ABSTRACT FROM AUTHOR]

In this paper, structural and electronic properties and stability of (10, 0) born nitride nanotube (BNNT) are considered within density functional theory by doping group IV elements of the periodic table. The HOMO-LUMO gap has been strongly modified and treated a dual manner by choosing B or N sites for dopant atoms. Formation energy calculation shows that B site doping is more stable than N site doping. Results also show that all dopants turn the pristine BNNT into a p-type semiconductor except for carbon-doped BNNT at B site. [ABSTRACT FROM AUTHOR]

The structural, electronic, and magnetic properties of monolayer boron nitride (BN) doped with a series of nonmagnetic metal atoms, including Ga, Li, Mg, and Na, are systematically investigated by the first-principles method. Both different dopants and doping sites are considered. Magnetic behavior is observed in the systems doped with Li, Mg, and Na atoms. On the other hand, owing to the stable structures of the BN monolayers with Li and Mg dopants among the three magnetic systems, we study the magnetic interaction in these two systems. Interestingly, a long-range ferromagnetic (FM) coupling is observed in the BN monolayer with two Li atoms doped as the Li-Li distance increases. Our results show that the FM interaction originates from a p-d exchange-like s-p coupling interaction. Moreover, nonmagnetic state appears in the system with two Mg dopants. [ABSTRACT FROM AUTHOR]