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Plasmonic effects of various sized Al nanospheres non-embedded on Ta2O5 antireflective–coated single-junction GaAs solar cells are analyzed by finite difference time domain (FDTD) simulations. The impact of optimized plasmonic nanoparticles is further analyzed for embedded Al nanospheres in GaAs and compared with nanoparticles at back contact. It is found that the nanoparticles of radius 30 nm show superior spectral response in comparison with other radii for non-embedded design. Further, non-embedded optimized nanoparticles show better spectral response when embedded in GaAs layer 10 nm below the Ta2O5 antireflection layer, which yields a maximum current density of 28.17 mA/cm2. Moreover, photovoltaic current–voltage characteristics were studied to confirm the performance enhancement induced by Al nanoparticle plasmons. The power conversion efficiency enhancement of 5.4, 11.5, and 2.3% for optimized radius of 30 nm in non-embedded, embedded (at optimized depth of 10 nm), and at rear surface, respectively, were found compared to Ta2O5-coated single-junction GaAs solar cells. [ABSTRACT FROM AUTHOR]

It is believed that the effectual scattering by earth-abundant Al nanoparticles in combination with photoelectric conversion-efficient GaAs material may help for cost-effective solar cells. Al nanoparticles of various radii embedded at different depths in a Ta2O5-coated GaAs semiconductor have been studied by finite-difference time-domain method for their influence towards spectral absorption rate and photocurrent in GaAs solar cells. The calculated spectral absorption rate and photocurrent show a significant enhancement at the optimal depth for a particular radius of Al nanoparticles, which is explained on the basis of surface plasmon resonance. Al nanoparticles of radius 80 nm embedded just below the antireflection layer of Ta2O5 result a maximum spectral absorption rate of 0.95 that leads to a photocurrent of 30.43 mA/cm2. [ABSTRACT FROM AUTHOR]