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A method to passively align bonded components without direct mechanical contact has been developed. This method uses the pressure field generated by the squeeze flow between the parts during the bonding process to increase the parallelism of planar components. A computational fluid dynamic (CFD) model has been developed to study the squeeze flow phenomenon and to determine generated efforts. Based on these calculations, an assembly stage standing on a flexure pinned linkage has been developed. This assembly stage had two purposes. The first was to show the possibility of passive mechanical alignment using a squeeze flow. The second was to measure efforts to confirm the CFD model. These measurements have led to a refined CFD model taking into account the non-Newtonian behavior of the fluid at high shear rates. This technique was initially developed for the assembly of a fiber-optic-to-silicon-chip-interface. Other potential applications could be wafer bonding, bonding of multiple wafer stacks, or 3D integrated circuits. [ABSTRACT FROM AUTHOR]

A new 3-D integration concept based on reconfigured wafer-to-wafer stacking is proposed. Using reconfigured wafer-to-wafer 3-D integration, many known-good dies (KGDs) can be simultaneously and precisely self-assembled by water surface tension onto a carrier wafer, which is called a reconfigured wafer. In addition, the KGDs on the reconfigured wafer can be transferred and bonded to another target wafer at the wafer level. The alignment accuracy is within 1 \mum when 3\,\times\,3-, 5\,\times\,5-, 4\,\times\,9,- or 10\,\times\,10-mm^2 chips are employed. To 3-D stack many KGDs in a batch process, we developed and employed a self-assembly multichip bonder. KGDs with 20-\mum-pitch Cu–SnAg microbumps covered with a nonconductive film as a preapplied underfill material on their top surface were self-assembled right-side up, and then transferred to the corresponding target interposer wafer upside down. The resulting daisy chain with 500 Cu–SnAg microbumps exhibited ohmic contacts, and the resistance of \sim40~m\Omega/bump was sufficiently low for 3-D large-scale integration application. [ABSTRACT FROM AUTHOR]