1. Thermal Noise in MOSFETs: A Two- or a Three-Parameter Noise Model?
- Author
-
UCL - SST/ICTM - Institute for Information and Communication. Technologies, Electronics and Applied Mathematics, Emam, Mostafa, Sakalas, Paulius, Vanhoenacker-Janvier, Danielle, Raskin, Jean-Pierre, Lim, Tao Chuan, Danneville, Francois, UCL - SST/ICTM - Institute for Information and Communication. Technologies, Electronics and Applied Mathematics, Emam, Mostafa, Sakalas, Paulius, Vanhoenacker-Janvier, Danielle, Raskin, Jean-Pierre, Lim, Tao Chuan, and Danneville, Francois
- Abstract
In this brief, it is clearly demonstrated that a two-parameter noise model is sufficient to accurately extract the MOSFET high-frequency noise performance, as long as channel uniformity is ensured (which corresponds to mainstream CMOS technology). Nevertheless, in the case of asymmetric channel-based MOSFETs, it is shown that a three-parameter noise model is required.
- Published
- 2010