Search

Context: The effect of X (X = O, Se, N, P, F, Cl) doping on the adsorption of Zn atoms by WS2 was investigated based on first principles. The electronic structure and optical properties of the adsorbed system after atomic doping were calculated. It is found that the Zn atom adsorbed on the W top (Tw) site has the most stable structure. When an S atom is replaced with an X atom based on the adsorption system, where the adsorption energy decreases after doping of O, P, F, and Cl atoms compared to the undoped system, it means that each system is more stable after doping of these atoms; charge transfer shows that the adsorption system after P-atom doping the system around the Zn atom loses electrons while S-atom gains electrons, which indicates that P-atom doping is favorable for the adsorption of Zn by WS2, N, P-atom is introduced as p-type doping and F, Cl-atom is introduced undoped by n-type doping, and the band gap of the doped system is less than that of the undoped one. With the introduction of different dopant atoms, certain impurity energy levels are introduced into the adsorption system. The prohibited bandwidth around the Fermi energy level reduces the density of states, causing the doped system's density of states to shift to lower energies, among which the shifts of N, P, F, and Cl are more pronounced. The P-doped adsorption system shows a new peak near the energy of − 11 eV. In addition, the study of optical properties showed that the peak reflections of both doped and non-doped systems adsorbing Zn atoms appeared in the ultraviolet region; the absorbance coefficient of the doped system is moved in the lower energy direction and red-shifted after atom doping; in addition, the absorption coefficients and reflectance of the P, Se doped systems are enhanced in the wavelength range of 200–300 nm compared with that before doping, the dielectric function and CBM and VBM positions were also calculated further indicating the potential of Se-doped systems in improving photocatalytic efficiency. Methods: In this paper, the structure optimization of X (X = O, Se, N, P, F, Cl) doping on WS2 adsorbed Zn atom model is performed based on the CASTEP module in Materials-Studio software under the first principles using GGA and PBE generalized function. The corresponding binding energies, bond lengths, bond angles, charge densities, energy band structures, densities of states, and optical properties were also analyzed. The Monkhorst–Pack particular K-point sampling method is used in the calculations; the K-point grid is 6 × 6 × 1, and the cutoff energy for the plane wave expansion is 500 eV. After geometric optimization, the iterative accuracy converges to a value of less than 1 × 10−5 eV/atom for the total energy of each atom and less than 0.03 eV/Å for all atomic forces. The thickness of the vacuum layer was set to 20 Å to avoid the effect of interlayer interaction forces. In this paper, 27 atoms were used to form a 3 × 3 × 1 supercellular tungsten disulfide system consisting of 18 S atoms and 9 W atoms. [ABSTRACT FROM AUTHOR]

Context: To lessen the impact of the dangerous metal Cr, this paper applies the first principles to investigate the adsorption behavior and photoelectric properties of GaS on Cr. The effects of doped GaS on Cr adsorption behavior are investigated with four GaS systems, which are pure, boron (B)-doped, nitrogen (N)-doped, and oxygen (O)-doped, in order to maximize the characteristics of GaS for use in novel sectors, to obtain understanding of the impact of doping on the electronic structure and optical properties of GaS adsorption of Cr, as well as to promote the development of the material. Four GaS adsorbed Cr systems, pure, B-doped, N-doped, and O-doped, are optimized, and the optimized results show that the stable adsorption position of Cr on both pure and doped GaS is the top position of Ga atoms, whereas doped elements B, N, and O can promote the adsorption of Cr on GaS, and the order of the strength of this promotion is B > N > O. Method: In this paper, molecular simulation calculations and analyses using the CASTEP module in the software Materials Studio are performed to simulate the structure optimization of GaS-adsorbed Cr materials doped with B, N, and O atoms by using the generalized gradient approximation (GGA) plane-wave pseudopotential approach [1] and the Perdew-Burke-Ernzerhof (PBE) generalized function [2]. From the convergence test, it is reasonable to set the K-point network to 4 × 4 × 1 and the truncation energy to 500 eV [3]. In this paper, a 3 × 3 × 1 supercell structure with 18 S atoms and 18 Ga atoms is selected. The convergence value of the iterative accuracy is 1.0e − 5 eV/atom, and all the atomic forces are less than 0.02 eV/Å. A vacuum layer of 16 Å is also set in the C direction to avoid interlayer interactions of GaS. First, we optimize the geometry of the model and then analyze the nature of the adsorption energy and electronic structure corresponding to the model. [ABSTRACT FROM AUTHOR]

Context: The electronic properties and optical properties of Cr-doped monolayer WS2 under uniaxial compressive deformation have been investigated based on density functional theory. In terms of electronic structure properties, both intrinsic and doped system bandgaps decrease with the increase of compression deformation, and the values of the bandgap under the same compression deformation after Cr doping are reduced compared with the corresponding intrinsic states. When the compressive deformation reaches 10%, both the intrinsic and doped system band gaps are close to zero. New electronic states and impurity energy levels appear in the WS2 system when doped with Cr atoms. For the optical properties, the calculation and analysis of the dielectric function under each deformation regime of monolayer WS2 show that the compression deformation affects the dielectric function, and when the compression deformation is 10%, the un-doped and Cr-doped regimes show a decrease in ε1(ω) compared to the compression deformation of 8%. For each deformation system, the peak reflections occur in the ultraviolet region. Near the position where the second peak of the absorption spectrum appears, it can be seen that the ability of each system to absorb light gradually decreases with the increase of the amount of deformation and appears to be red-shifted to varying degrees. Methods: This study follows the initial principles of the density functional theory framework and is based on the CASTEP module of Materials-Studio software GGA and PBE generalizations are used to perform computations such as geometry optimization of the model. We have calculated the energy band structure of monolayer WS2 with intrinsic and compressive deformations of 2% and 4% using PBE and HSE06, respectively. The band gap values calculated using PBE are 1.802 eV, 1.663 eV, and 1.353 eV, respectively, and the band gap values calculated with HSE06 are 2.267 eV, 2.034 eV, 1.751 eV. The results show that the bandgap values calculated by HSE06 are significantly higher than those calculated by PBE, but the bandgap variations calculated by the two methods have the same trend, and the shape characteristics of the energy band structure are also the same. However, it is worth noting that the computation time required for the HSE06 calculation is much longer than that of the PBE, which is far beyond the capability of our computer hardware, and the purpose of this paper is to investigate the change rule of the effect of deformation on the bandgap value, so to save the computational resources, the next calculations are all calculated using the PBE. The Monkhorst–Pack special K-point sampling method is used in the calculations. The cutoff energy for the plane wave expansion is 400 eV, and the K-point grid is assumed to be 5 × 5 × 1. Following geometric optimization, the iterative precision converges to a value of less than 0.03 eV/Å for all atomic forces and at least 1 × 10−5 eV/atom for the total energy of each atom. The vacuum layer's thickness was selected at 20 Å to mitigate the impact of the interlayer contact force. [ABSTRACT FROM AUTHOR]

Context: In this paper, the electronic and optical properties of Cr-doped monolayer MoS2 under uniaxial tensile strain are investigated by first-principle calculations. It is shown that uniaxial tensile strain can significantly change the electronic and optical properties of Cr-doped monolayer MoS2, and the bandgap value of the intrinsic MoS2 system gradually decreases with the increase of tensile strain, while the bandgap value of the Cr-doped MoS2 system is relatively stable. However, when the stretching reaches a certain degree, both the intrinsic and doped systems become metallic. From the analysis of the density of states, it is found that new electronic states and energy levels appear in the intrinsic MoS2 system and all Cr-doped monolayer MoS2 systems with the increase of the tensile strain, but the changes in the density of states diagrams of the Cr-doped monolayer MoS2 system are relatively small, which is mainly attributed to the effect of the Cr-doped atoms. The analysis of optical properties displays that the stretched doped system differs from the intrinsic MoS2 system in terms of dielectric function, absorption and reflection, energy loss function, and refractive index. Our results suggest that uniaxial tensile strain can be used as an effective means to modulate the electronic structure and optical properties of Cr-doped monolayer MoS2. These findings provide a theoretical basis for understanding the optoelectronic properties of MoS2 and its doped systems as well as their applications in optoelectronic devices. Methods: Based on the first principle of density functional theory framework and the CASTEP module in Materials Studio software (Perdew et al. in Phys Rev Lett 77(18):3865–3868, 1996). The structure of Cr atom-doped MoS2 systems and MoS2 systems were optimized using the generalized gradient approximation plane-wave pseudopotential method (GGA) and Perdew-Burke-Ernzerhof (PBE) generalized functions under 3%, 6%, and 9% tensile deformation, and the corresponding formation energy, bond length, electronic structure, and optical properties of the models were analyzed. The Grimme (J Comput Chem 27(15):1787–1799, 2006) vdW correction with 400 eV cutoff was used in Perdew-Burke-Ernzerhof (PBE) functional to optimize the geometry until the forces and energy converged to 0.02 eV/Å and 1.0e-5eV/atom, respectively. For each model structure optimization, the K-point grid was assumed to be 4×4×1, using the Monkhorst-Pack special K-point sampling method. After the MoS2 supercell convergence test, the plane-wave truncation energy was chosen to be 400 eV. Following geometric optimization, the iterative accuracy converged to no less than 1.0×10−5 eV/atom for total atomic energy and less than 0.02 eV/Å for all atomic forces. We created a vacuum layer of 18 Å along the Z-axis to prevent the impact of periodic boundary conditions and weak van der Waals forces between layers on the monolayer MoS2. In this paper, a total of 27 atoms were used for the 3×3×1 supercell MoS2 system, which consists of 18 S atoms and 9 Mo atoms. [ABSTRACT FROM AUTHOR]

Purposes: The paper aims to investigative the cacuses and impacts of In- and Vacancy-doped to 6H-SiC, expecting that improving optical properties of materials. Design-Using the first-principles calculations, we discuss the electronic structure and optical properties of different doped 6H-SiC systems. Findings: The results show that In-doped 6H-SiC becomes a direct bandgap p-type semiconductor and the energy bandgap is reduced from the intrinsic 2.059 to 1.515 eV. We demonstrate the stability of the systems through the formation energy analysis, meanwhile identify their physical origins and discuss applications of all structures in electronic devices within optical analysis. Find the energy beginning values of the VSi-doped and VC-doped systems' optical absorption spectrums and extend to 0.4 2 eV and 0.11 eV respectively compared with the original 3.23 eV. In the visible light region, the reflectivity images of the VC/VSi and (In, VSi)-codoped systems rise obviously. Conclusions: The optical properties of all doping systems were analyzed to be improved compared with the intrinsic, all above mentioned provide a theoretical basis for the fabrication of spintronic and optical devices. [ABSTRACT FROM AUTHOR]

Context: In this study, the effects of different shear deformations on the structural stability, electronic structure, and optical properties of a Mg atom adsorption system of S vacancy defect SnS2 are systematically investigated based on density functional theory. It is shown that the presence of an S-vacancy defect makes the band gap of the SnS2 system significantly smaller than that of the perfect SnS2 system, and the SnS2 system is changed from a direct band gap semiconductor to an indirect band gap semiconductor. The optimal adsorption position of a Mg atom on the S-vacancy SnS2 system is above the S atom where the adsorption energy is the largest and the system is the most stable. The density of states of the adsorption system is predominantly contributed by the S-3p and Sn-5 s orbital electrons. The imposition of shear deformation leads to the introduction of certain impurity energy levels in the adsorption system, and the forbidden bandwidth near the Fermi energy level decreases. As compared to the intrinsic SnS2, the absorption and reflection peaks of adsorption systems under different shear deformation are red-shifted and appear in the ultraviolet region. This improves the utilization of the adsorption system for ultraviolet light to a great extent. Methods: The model calculations in this paper are performed using the CASTEP module of the Material Studio (MS) software based on the first principles of Density Functional Theory (DFT) (Wei et al. in Physica B 545:99–106, 2018) for plane wave artifacts. Geometrical optimization and computational procedures are used to calculate the exchange–correlation energy using the Perdew-Burke-Ernzerhof (PBE) generalized function (Perdew et al. in Phys Rev B Condens Matter 48:4978, 1993) of the generalized gradient approximation (GGA). The Monkhorst–Pack method (Monkhorst and Pack in Phys Rev B 13:5188–5192, 1976) was used to rationalize the sampling of the highly symmetric k-points in the Brillouin zone. The grid of k-points is set to be 6 × 6 × 1. The plane-wave truncation energy is set to be 400 eV. The energy convergence criterion is 1.0 × 10−5 eV. The residual stress of all atoms is 0.01 eV/Å. A vacuum layer with a thickness of 15 Å is set up in the z-direction, which ensures that the interactions of the system along the z-axis between the top and the bottom layers can be ignored during the whole simulation process. We construct a 3 × 3 × 1 SnS2 system containing 27 atoms as the computational model. The intrinsic SnS2 contains 9 Sn atoms and 18 S atoms. [ABSTRACT FROM AUTHOR]

This paper presents electronic spectrum calculations and a study of the optical properties of the binary compounds Mn70Al30 and Mn80Al20 with the β-Mn structure. The energy dependences of the calculated density of states, with high values at the Fermi level, are determined by broad bands formed by manganese 3d states. The calculated electronic structures are used to analyze measured optical conductivity spectra of the alloys in the quantum light absorption range. From their optical properties in the infrared spectral region, we evaluate a number of characteristics of conduction electrons. [ABSTRACT FROM AUTHOR]

This paper employs the Heyd-Scuseria-Ernzerhof (HSE) function to research electronic structures of monolayer InxAl1-xN with different compositions (x = 0, 0.25, 0.5, 0.75, 1) based on the first-principles, and the optical properties of singlelayer InxAl1-xN are calculated by Generalized Gradient Approximation-Perdew Burke Ernzerhof (GGA-PBE) function. The influence of the electronic structure on the properties has been analyzed. Then the influence of doping quantity on the characteristics has been summarized, which also indicates the trend of the complex dielectric function and absorption spectrum. The calculation results show that with the increase of x, the static dielectric constant increases, the electron transition ability increases, and the absorption peak intensity in the light absorption spectrum increases. It can conclude that the InxAl1-xN compound can theoretically achieve the adjustable Eg and photoelectric performance with x, which will apply in making various optoelectronic devices, including solar cells and sensors. [ABSTRACT FROM AUTHOR]

Theoretical studies on CdS/BiOI heterojunctions are lacking; therefore, this paper studies their electronic structure and optical properties through density functional theory calculations. First-principles calculations were made to investigate the effect of introducing oxygen vacancy defects on the photocatalytic efficiency of CdS/BiOI. The band gap of CdS/BiOI was effectively narrowed compared to that of its constituent materials, resulting in a redshift of the absorption edge. Based on the obtained work functions, the difference in Fermi energy levels caused a spontaneous flow of electrons, resulting in band bending and the establishment of a local electric field. The electric field promoted the separation of electron–hole pairs. At the same time, the addition of oxygen vacancies created impurity levels, allowing light absorption to extend to the infrared region, further promoting carrier separation. Our study reveals the origin of the enhanced efficiency of CdS/BiOI heterostructures and also predicts the photocatalytic activity of CdS/BiOI heterojunctions after introducing oxygen vacancies. These results may facilitate the design of such structures with enhanced photocatalytic properties. • The electronic structure and optical properties of CdS/BiOI heterojunction are studied by using density functional theory, and the effect of introducing oxygen vacancy defects into the structure is predicted theoretically. • According to the band structure, density of state, 3D/2D charge density difference and work function calculated by the first principle, the electron transfer from BiOI to CdS can be analyzed, and the trend is enhanced after the introduction of oxygen vacancy defect. • The calculation of optical properties shows that the formation of heterojunction and the introduction of oxygen vacancy defects promote the enhancement of optical absorption intensity. • This paper supplements the theoretical calculation of vacancy in CdS/BiOI heterojunction. And defects are introduced into the heterostructure to enhance the catalytic performance of such materials. [ABSTRACT FROM AUTHOR]

Two-dimensional layered materials are a new class of materials that have emerged in recent years. Usually, it is formed by strong covalent bonds or ionic bonds within the layers. The interlayer are stacked together by weak Van der Waals force. The purpose of this paper is to investigate the role of the band structure of materials in experimental research, and other physical properties, in order to prepare the material into a device. Measuring its two-dimensional optical characteristics under an optical microscope can understand the use scenarios and development trends of 2D materials in electronics initially. At present, graphene is the hottest research on the market, and it is also the first discovered two-dimensional material, it is characterized by a working belt bandwidth, good optical reflectivity, and short reaction time, but the graphene material itself is the electronic structure with zero band gap .especially with a low damage threshold and a small adjustable modulation depth, In particular, its low damage threshold, small adjustable area in the adjustment breadth and its poor thermal effect limit its role in the field of high-energy lasers. Especially the characteristics of Low damage threshold and small adjustable modulation depth, especially low damage threshold, small adjustable area in adjustment breadth and poor thermal effect etc. limit its role in the field of high-energy lasers. In this paper, obtain the plasma characteristics of the nanostructured surface of graphene by using s-SNOM and chemical vapor deposition. And relate the Plasma size on the plasma surface nanopattern to the excited wavelength and structure closely in a certain mode, and enhance resonance in a gap of 25 nm wide; and using s-SNOM to study other methods for preparing characteristic structure of plasma on the surface of graphene nanomaterials. The experimental results show that molybdenum disulfide is the material that can reflects the two-dimensional layered structure best, its optical properties are related to the number of layers closely. Moreover, for the construction of photovoltaic devices, photodetector and light emitters, it is important to study different nanostructures using scattering near-field optical microscopy. It is important to study different nanostructures by scattering near-field optical microscopy. Infrared light excites the optical properties of graphene and molybdenum disulfide. [ABSTRACT FROM AUTHOR]

Using the density functional theory (DFT) of the first principle and Generalized gradient approximation method, the electronic structures and optical properties of the InxGa1-xN crystals with different x (x = 0.25, 0.5, 0.75, 1) have been calculated in this paper. The influence of the electronic structure on the properties has been analyzed. Then the influence of doping quantity on the characteristics has been summarized, which also indicates the trend of complex dielectric function, absorption spectrum and transitivity. With the increase of x, the computational result shows that the optical band gap (i.e.Eg) of the InxGa1-xN crystal tends to be narrow, then the absorption spectrum shifts to the low-energy direction. And the Fermi energy slightly moves to the bottom of conduction band which would cause the growth of conductivity by increasing x. In a word, the InxGa1-xN compound can be achieved theoretically the adjustable Eg and photoelectric performance with x, which will be used in making various optoelectronic devices including solar cell and sensors. [ABSTRACT FROM AUTHOR]

In this paper, nanostructured tin oxide doped with Nitrogen was investigated by first principle calculations. At first, band structure, density of states, and projected density of states were evaluated for pure tin oxide. Then, the effect of doping with Nitrogen was studied for cases when N replaces O atom, Sn atom, respectively, and in two interstitials situation. Results were compared with pure reference case. Except of one interstitial case, Nitrogen doping usually plays the role of a p-type doping, however the decrease of band gap occurs in all cases. [ABSTRACT FROM AUTHOR]

Abstract In this paper, the Heyd–Scuseria–Ernzerhof (HSE06) hybrid functional is employed to explore the structural, electronic, and optical properties of M 2 Si 5 N 8 :Eu2+ phosphors (M = Mg, Ca, Sr, Ba) on the ground–state and excited–state levels. From the detailed study of electronic structures of pure M 2 Si 5 N 8 , the top of the valence band is predominantly of N p character and the calculated band gaps are consistent with the reported experimental values. By Eu doping, the occupied 4f band is located directly in the band gap and results in the optical transition of the 4f–5d character. In order to confirm the location of the Eu 5d band below the conduction band, the excited–state calculation was executed. Using the position of the lowest excited–state 5d band below the conduction band, the calculated 4f–5d energy gaps agrees well with the experimental data. The excited–state calculation confirms that the Eu2+ d–f emission will be predominant in these phosphors. Furthermore, in order to understand and explain the excitation and emission observations, the energy level scheme was constructed from the calculated electronic structures. The findings in this article could well suggest a new Mg 2 Si 5 N 8 :Eu2+ phosphor with a stable Eu2+ d–f emission and can also be applied to select another rare-earth dopant. Graphical abstract Image 1 Highlights • First principles calculations of M 2 Si 5 N 8 :Eu2+ phosphors (M = Mg, Ca, Sr, Ba) are performed. • The structural, electronic, and optical properties are investigated. • The energy level scheme is constructed from the calculated electronic structures. • New Mg 2 Si 5 N 8 :Eu2+ phosphor with a stable Eu2+ d–f emission is predicted. [ABSTRACT FROM AUTHOR]

Graphical abstract Highlights • Structural, magnetic and optical properties of Mg-doped CeO 2 (1 1 1) surface were investigated. • The doped CeO 2 (1 1 1) surface systems exhibit different bonding character. • The doped surface and subsurface systems result in local and scattered spin atmosphere. • The incorporation of Mg can lead to the red shift of absorption edge. Abstract The electronic structure, magnetic and optical properties of Mg-doped CeO 2 (1 1 1) surface have been investigated by first-principles calculations. In this paper, the doping case is actively favorable to process under O-rich conditions than under Ce-rich conditions. The distortion of doping systems of Mg replacing Ce of surface is larger than that of subsurface. The covalent character is getting weaker and the ionic character is gradually obvious for Mg O bond from surface to subsurface doping. The results show that the existence of defect states with O 2 p orbital character makes spin splitting, causing the local and scattered magnetic moments for surface and subsurface doping of Ce, respectively. And the 9 and 12 atomic layers doping systems exhibit magnetic ground states with different magnetic moments. In particular, the calculated Curie temperature (about 434, 483, 1200 K) is higher than room temperature (RT), therefore, the theoretical results showed that Mg-doped CeO 2 (1 1 1) thin films would can be obtained stable room temperature ferromagnetism (RTFM), which is beneficial to practical application. In addition, the optical properties show that all doped systems are capable of enhancing effective absorption of visible and near-infrared light. [ABSTRACT FROM AUTHOR]

The I2-II-IV-VI4 series of quaternary chalcogenides semiconductors have drawn wide interest for their potential application as solar-cell absorbers. In this paper, we present a study of electronic and optical properties of the equilibrium kesterite structure (KS) of Cu2ZnGeS4 (CZGS) calculated by means of the full potential linearized augmented plane wave method. For this purpose, we used the Wien2k code based on the density functional theory with the generalized gradient approximation (GGA), modified Becke-Johnson exchange potential (mBJ) and the Hubbard potential U. The TB-mBJ is used alone or combined with U (TB-mBJ, and TB-mBJ+U). The results are compared with other theoretical results and the available experimental ones. The obtained results show that the top of the valence band is mainly composed by the Cu d orbital while the bottom of the conduction band is a mixture of Ge s and S p states. It was found that KS-CZGS has a direct band gap of 0.3, 1.8 and 2.0 eV using GGA, GGA+TB-mBJ and GGA+TB-mBJ+U, respectively. It is observed that states exist above the Fermi level (0 eV) with a width of 0.3 and 0.2 eV when we use GGA and GGA+TB-mBJ, while these states come down under the Fermi level when using GGA+TB-mBJ+U. The optical properties are calculated and an almost isotropic behavior is found in contrast to the reported properties of the stannite phase. This behavior can be linked to the charge density and the structure. [ABSTRACT FROM AUTHOR]

This paper reports results from the study of the electronic structure, bonding and optical properties of ternary (HfC) m Al 4 C 3 (m = 1, 2, 3) carbides. The interatomic bonding and bond order is studied to elucidate the role to atoms in the structure. The band structures of all three (HfAl 4 C 4 , Hf 2 Al 4 C 5 and Hf 3 Al 4 C 6 ) carbides show conducting nature. All three carbides exhibit direct band gap. Density of states (DOS) spectra of HfAl 4 C 4 , Hf 2 Al 4 C 5 and Hf 3 Al 4 C 6 carbides reveal that the total number of states, N( E F ) at Fermi level are 2.84, 6.51 and 6.37 states/eV, respectively. The electronic charge transfer from Hf and Al atomic sites to C atomic site has been found in all three carbides. The bond order (BO) calculation of these carbides shows the dominating role of Al-C bonds in to the cohesion of crystal structures. Localization index (LI) calculation reflects highly delocalized states near the Fermi level. The dependence of dielectric function and optical conductivity on photon energy show anisotropic behavior of HfAl 4 C 4 , Hf 2 Al 4 C 5 and Hf 3 Al 4 C 6 carbides. [ABSTRACT FROM AUTHOR]

Black phosphorus (BP) is a new two-dimensional (2D) material. It has received significant attention because of its great potential in the field of optoelectronics, which arises due to its low-dimensional effects. In this paper, the effect of bi-axial strain on the band structure of monolayer BP has been studied by using the first-principles method based on density functional theory (DFT). We find that the band gap range of monolayer BP can be moderately and effectively adjusted by external stress from 0 to 1.845 eV. Simultaneously, the direct band gap is maintained during the stretching process, which leads to a high electron mobility suitable for applications. Moreover, the compressive strain can result in a semiconductor–metal transition (SMT) with few-layer BP, whereas tensile strain only affects the band gap. Based on the electronic properties of monolayer BP, its optical properties are analyzed in detail, and the influence of strain—from a compressive strain of 12% to a tensile strain of 12%—on these properties is systematically discussed. It is found that the strain range and mode have a significant impact on the optical properties. In addition, the dielectric function and absorption spectra calculated along two different directions indicate that a significant optical anisotropy appears, giving a strong directionality dependence in the primitive and strained monolayer BP. It can be concluded that by applying external stress to monolayer BP, its optical properties can be readily controlled, which is beneficial for device applications. Furthermore, based on its direction-dependent response to the external stress, this behavior can also be used to detect the orientation of the deposited BP without the need for precise electron microscopy. [ABSTRACT FROM AUTHOR]

Magnetic circular dichroism (MCD) spectroscopy is a source of important data about the electronic structure and optical properties of different chemical systems. Theoretical simulation of the MCD spectra can be used to assist in the understanding of empirically measured MCD spectra. In the present paper, a theoretical investigation of electronic and optical properties of phosphine-protected gold clusters with a Au93+ core with D2h symmetry was performed with time-dependent density functional theory. The influence of ligands on the optical properties of the gold core was investigated. Simulations of the optical absorption and MCD spectra were performed for the bare gold Au93+ cluster as well as for ligand-protected Au9(PH3)83+ and Au9(PPh3)83+ species. MCD spectra were calculated at a temperature of 298 K and a magnetic field of 7 T. A comparative analysis of theoretical and experimental data was also performed. The obtained results show that the theoretically simulated MCD spectrum for the Au9(PPh3)83+ ion in gas phase exhibits a reasonable agreement with experimental results for the [Au9(PPh3)8](NO3)3 system, although with a red shift of up to 0.5 μm-1. Overall, MCD provides significant additional details about the electronic structure of the considered systems compared to the absorption spectra. [ABSTRACT FROM AUTHOR]

The structural, elastic, electronic and optical properties of K 2 CuBiX 6 (X ​= ​Br, Cl) are studied by the first principle calculation in this paper. Their structural and thermodynamic stabilities are guaranteed by the formation energy, binding energy and Born-Huang criterion. The results of elastic constants show that the two materials are ductile and can be applied in foldable optoelectronic devices. Besides, The calculated bandgap values are 1.03 ​eV and 1.44 ​eV for K 2 CuBiBr 6 and K 2 CuBiCl 6 , respectively, which is just in the ideal energy gap range of semiconductors. K 2 CuBiX 6 has very small effective mass advantageous to carrier transport. In addition, the optical properties analysis shows that K 2 CuBiX 6 has excellent light absorption properties in ultraviolet–visible wavelength. Due to their suitable bandgaps and good light absorption, K 2 CuBiX 6 has a promising application in solar cells and other optoelectronic devices. In this study, the perovskites K 2 CuBiX 6 (X ​= ​Br, Cl) are proposed as functional materials in solar cells. [Display omitted] • The K 2 CuBiX 6 (X ​= ​Br, Cl) are very suitable for photosensitive materials of solar cells. • The K 2 CuBiX 6 can be a potential candidate for excellent light absorbing material. • The K 2 CuBiX 6 is the structural and thermodynamic stabilities. [ABSTRACT FROM AUTHOR]

MoS2-WS2 thin layers with different deposition sequences and stacking configurations have been studied using first principles full potential linearized augmented plane wave method. The electronic and optical properties of ten atomic layers (in [0 0 0 1] direction) of MoS2-WS2 are reported in the present paper. Ten layers of MoS2-WS2, which are free from quantum size effects, show an indirect band gap which varies between 0.89 and 1.22 eV by engineering of the layering sequence and stacking configuration. Optical properties like absorption coefficients, dielectric tensors and refractive indices of bilayer and multilayer films of MoS2-WS2 are determined and are found to be different from the ten layers of MoS2 and WS2. Changes in the electronic and optical properties of multilayers have been elaborated in terms of interlayer and intralayer S-S distances. A comparison of absorption spectra deduced using the first principles calculations for Si and different combinations of multilayers of MoS2-WS2 show their applicability in optoelectronics and photovoltaic devices. [ABSTRACT FROM AUTHOR]

Abstract: In this paper, we have investigated the electronic, optical and mechanical properties of the Y2O3 crystal by first-principle calculations based on the density–functional theory. The generalized gradient approximation (GGA-PBE) and hybrid exchange–correlation functional (HSE06) are both used for comparative study. It is found that, the band gap of Y2O3 calculated by HSE06 method (6.0eV) is in good agreement with the experimental band gap data (5.5eV), and HSE06 gives better electronic structure description close to experiments. Then we calculate the elastic constants, and derive the corresponding properties i.e.; bulk, shear and Young’s moduli, and Poisson’s ratio. Our calculated elastic and mechanical properties correspond well with experimental data. Besides, we also obtain the equilibrium lattice and bulk modulus of yttria by fitting the Birch–Murnaghan equation of state. It is found that, the HSE06 well reproduce the experimental lattice parameters, equilibrium volume and bulk modulus of Y2O3. Based on the accurate described crystal and electronic structure and mechanical properties by HSE06 method, the optical properties of this material are also analyzed. [Copyright &y& Elsevier]

The equilibrium geometries of four asymmetric spirosilabifluorene derivatives are optimized by means of the DFT/B3LYP method with the 6-31G basis sets in this paper. On the basis of the optimized structures, the electronic structure and second-order nonlinear optical properties are calculated by using time-dependent density-functional theory (TDDFT) based on the 6-31G level combined with the sum-over-states (SOS) method. The results show that these compounds possess remarkably larger molecular second-order polarizabilities than typical organometallic and organic compounds, and replacement of a carbon atom with nitrogen within the conjugated substituent has a great influence on the second-order nonlinear optical properties. Analysis of the main contributions to the second-order polarizability suggests that charge transfer from the z-axis directions plays a key role in the nonlinear optical response. These compounds have a possibility to be excellent second-order nonlinear optical (NLO) materials from the standpoint of large values, small dipole moment, high transparency, and small dispersion behaviors. [ABSTRACT FROM AUTHOR]

The post-transition metal cations are widely used in rechargeable batteries, solar-cells, and birefringent compounds. In this paper, the electronic structures and birefringence of ternary CsSnX 3 (X ​= ​Cl, I), CsPbX 3 (X ​= ​Cl, Br, I), and binary MX 2 (M ​= ​Sn, Pb; X ​= ​Cl, Br) compounds are investigated using the first-principles methods. The results show that these metal halides own different mechanism in stereochemical activity and birefringence, i.e., the stereochemical activity of lone-pair electrons are determined by energy difference between cation s states and halogen p states, and the stereochemical activity decreases from Cl to I. While the cation p states play an important role in determining the birefringence, and the birefringence increased from Cl to I. [Display omitted] • Electronic structures and optical properties of post-transition metal halides are investigated. • Stereochemical activity of lone-pair electrons are determined by energy difference of cation-s and halogen-p states. • Cation p states play an important role in determining the birefringence. [ABSTRACT FROM AUTHOR]

Gallium oxide (Ga2O3) is a promising wide-band-gap semiconductor material for UV optical detectors and high-power transistor applications. The fabrication of p-type Ga2O3 is a key problem that hinders its potential for realistic power applications. In this paper, pure α-Ga2O3 and Ca-doped α-Ga2O3 band structure, the density of states, charge density distribution, and optical properties were determined by a first-principles generalized gradient approximation plane-wave pseudopotential method based on density functional theory. It was found that calcium (Ca) doping decreases the bandgap by introducing deep acceptor energy levels as the intermediate band above the valence band maximum. This intermediate valence band mainly consists of Ca 3p and O 2p orbitals and is adequately high in energy to provide an opportunity for p-type conductivity. Moreover, Ca doping enhances the absorptivity and reflectivity become low in the visible region. Aside, transparency decreases compared to the pure material. The optical properties were studied and clarified by electrons-photons interband transitions along with the complex dielectric function's imaginary function. [ABSTRACT FROM AUTHOR]

In this paper, we study theoretically the structural, electronic, optical, elastic and thermoelectric properties of MgSc 2 X 4 (X ​= ​S; Se) compounds using first-principles calculations. The calculated band structure reveals that MgSc 2 S 4 and MgSc 2 Se 4 are direct-gap semiconductors. The optical features of MgSc 2 S 4 and MgSc 2 Se 4 as functions of photon energy were calculated for energy range of 0–20 ​eV. MgSc 2 X 4 (X ​= ​S; Se) are promising optoelectronic, and thermoelectric compounds whose absorption rates can reach 4 orders of magnitude in the visible range, and 6 orders of magnitude in ultraviolet range. Both chalcogenides possess high brittleness with the Pugh's ratio (B / G), and Cauchy pressure C 12 − C 44 of 1.60 and − 4.485 GPa (for MgSc 2 Se 4); 1.61 and − 3.655 GPa (for MgSc 2 S 4). MgSc 2 S 4 and MgSc 2 Se 4 reveal similar Z T e values. The obtained properties of MgSc 2 X 4 (X ​= ​S; Se) are well confirmed by experimental results. Weighted band structures of MgSc 2 S 4 and MgSc 2 Se 4 as obtained by TB-mBJ. Image 1 • Structural, and electronic properties of MgSc 2 X 4 (X ​= ​S; Se) spinel compounds. • The distribution of the conduction bands depends on the hybridization S/Se- p orbitals and Sc- d orbitals. • High absorption rate in the visible and ultraviolet ranges. • High brittleness of MgSc 2 S 4 , and MgSc 2 Se 4. • Good thermoelectric and optoelectronic properties. [ABSTRACT FROM AUTHOR]

Pyrite is a mineral often associated with coal in coal seams and is a major source of sulfur in coal. Coal–pyrite is widely distributed, easily available, low-cost, and non-toxic, and has high light absorption coefficient. So, it shows potential for various applications. In this paper, the density-functional theory (DFT + U) is used to construct coal–pyrite with carbon doped in the sulfur and iron vacancies of pyrite. The effects of different carbon defects, different carbon doping concentrations, and different doping distributions in the same concentration on the electronic structure and optical properties of coal–pyrite were studied. The results show that the absorption coefficient and reflectivity of coal–pyrite, when its carbon atom substitutes the iron and sulfur atoms in the sulfur and iron vacancies, are significantly higher than those of the perfect pyrite, indicating that coal–pyrite has potential for application in the field of photovoltaic materials. When carbon is doped in the sulfur vacancy, this impurity state reduces the width of the forbidden band; with the increase in the doping concentration, the width of the forbidden band decreases and the visible-light absorption coefficient increases. The distribution of carbon impurities impacts the band gap but has almost no effect on the light absorption coefficient, complex dielectric function, and reflectivity, indicating that the application of coal–pyrite to photovoltaic materials should mainly consider the carbon doping concentration instead of the distribution of carbon impurities. The research results provide a theoretical reference for the application of coal–pyrite in the field of photoelectric materials. [ABSTRACT FROM AUTHOR]

Using the first-principle calculation that is based on the density functional theory (DFT), our group gains some insights of the structural, electronic and optical properties of two brand new types of BiOI/TiO2 heterojunctions: 1I-terminated BiOI {001} surface/TiO2 (1I-BiOI/TiO2) and BiO-terminated BiOI {001} surface/TiO2 (BiO-BiOI/TiO2). The calculation illustrates that BiOI/TiO2 heterojunction has excellent mechanical stability, and it shows that there is a great possibility for the BiOI/TiO2 heterojunction to be used in visible-light range, hence the photocatalytic ability can be enhanced dramatically. Especially, from the calculation, we discovered that there are two specific properties: the band-gap of 1I-BiOI/TiO2 heterojunction reduces to 0.28 eV, and the BiO-BiOI/TiO2 semiconductor material changes to n-type. The calculated band offset (BOs) for 1I-BiOI/TiO2 heterojunction indicates that the interfacial structure contributes a lot to a suitable band alignment which can disperse the photo-generated carriers into the opposite sides of the interface, so this could effectively weaken the electron-hole recombination. Meanwhile, the built-in potential around the interface accelerates the movement of the photo-generated electron-hole pairs. We believe this is the reason that the BiOI/TiO2 material shows perfect photocatalytic performance. This paper can provide theoretical support for the related research, especially the further research of the BiOI-based material. [ABSTRACT FROM AUTHOR]

Hexagonal LuFeO 3 compound is a multiferroic material whose ground state magnetic structure, band gap, and optical absorption spectra are matters of debate in the literature. In the present paper, these properties have been investigated by the employment of the calculations based on non-collinear spin density functional theory, with the exchange and correlation effects treated by local spin density approximation (LSDA) including effective Hubbard (U eff) correction (LSDA + U eff). It was concluded that the results with U eff = 4.0 eV correlate to the experimental facts in the best manner. The ground state magnetic configuration is found to be Γ 1 + Γ 2 , characterized by weak ferromagnetism along the c-axis (0.07 μ B /Fe-atom). The calculated band gap is found to be 1.03 eV, supporting those experimental works which conclude that the gap value should be ∼1.1 eV. The optical absorption spectrum is computed and found to be in reasonable agreement with experimental data. Its edge (up to 5 eV) is generated by electronic transitions between the occupied and unoccupied Fe 3d- and the O 2p-states, with energy transfer occurring within the basal planes of the hexagonal crystal structure. The controversial lowest energy peak (centered between 1 and 2 eV) is generated by absorption of the light polarized perpendicularly to the hexagonal c-axis. • Multiferroic hexagonal LuFeO 3 has been studied by non-collinear spin DFT. • Γ 1 + Γ 2 magnetic configuration is found to be the ground state. • Band gap is confirmed to be 1.1 eV. • Optical absorption occurs largely via electron transitions within the basal planes. • Lowest-energy absorption peak is excited by light polarized along the basal plane. [ABSTRACT FROM AUTHOR]