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Hybrid tin halides with formamidinium cations become a promising candidate for eco‐friendly solar cells, which achieves the best photovoltaic performance among various lead‐free perovskite solar cells (PSCs). Unfortunately, the low quality of perovskite layers and the oxidation of Sn2+ ions degrade the performance of devices, leading to an obviously lower power conversion efficiency (PCE) compare to hybrid lead halides. Additive engineering is a facile strategy for improving the quality of perovskite layers. In this work, the 2‐aminopyrazine (APZ) additive is investigated for depositing FA0.8PEA0.2SnI2.8Br0.2 layers, and corresponding PSCs are examined. It is found that the melting point of APZ additives drops below the annealing temperature of perovskite layers by the intermolecular interaction with formamidinium iodide (FAI). The melt phase at the grain boundaries encourages the diffusion of ions in the annealing process, leading to an improved quality of perovskite layers. And the formation of APZ‐SnI2 complex also inhibits the oxidation of Sn2+ ions. Consequently, the defect density and the recombination are significantly reduced in PSCs, resulting in an increase of PCEs from 11.4% to 13.0% and a simultaneous improvement of device stability. This work demonstrates a strategy for improving tin‐based PSCs based on melt assisted annealing and coordination interaction. [ABSTRACT FROM AUTHOR]

In inverted perovskite solar cells (PSCs), metal oxides become kind of promising hole transport layers for their facile synthesis and low cost. For conventional hole transport materials, the valence band match between metal oxides and perovskite layers is usually necessary for the hole extraction process. Ga2O3 is an emerging semiconductor material with ultrawide bandgap, but a significant energy level mismatch exists at Ga2O3/perovskite interfaces. In this work, Cu‐doped Ga2O3 (Ga2O3:Cu) nanocrystals are synthesized by the hydrothermal method and used as the hole transport material of inverted PSCs for the first time. It is found that Cu dopants can substantially improve the performance of Ga2O3 layers, and the efficiency of PSCs is increased from 7.6% to 19.5%. This improvement can be attributed to the additional hole transport channels from impurity levels of Cu dopants, which exactly match with the valence band of perovskite layers. As a consequence, Ga2O3:Cu layers can effectively extract holes and inhibit the recombination in perovskite layers. This work also provides an alternative route for the design of hole transport materials. [ABSTRACT FROM AUTHOR]

In perovskite solar cells (PSCs), hybrid perovskite:fullerene phases are proposed to suppress macroscopic current hysteresis behavior by alleviating ion migration. However, the understanding of how fullerenes exactly alleviate the current hysteresis and what is the influence of fullerenes in such hybrid phases are still unclear from a microscopic viewpoint. Herein, the intentional incorporation of fullerene into perovskite is used to examine how fullerene exactly reduces the macroscopic current hysteresis. The location and distribution of fullerenes in the hybrid phase are confirmedly visualized using conductive atomic force microscopy and Kelvin probe force microscopy measurements. Fullerenes located at grain boundaries function as a source of beneficial effect on choking the channels of ion migration and also as the electron traps that compromise the photocarrier extraction. Macroscopic current hysteresis originating from the influxes of all nanoscopic grain boundary current signals is avoided in PSCs based on the hybrid perovskite:fullerene phases. These results not only provide a strong correlation between nanoscopic and macroscopic current hysteresis behaviors but also clearly clarify how fullerenes play a role in reducing the current hysteresis in hybrid phases and thus prototype devices. [ABSTRACT FROM AUTHOR]

Hybrid halide perovskite based on CH3NH3PbI3 and related materials has emerged as the most exciting development in the next generation photovoltaic technologies. There is still requirement for an effective method to establish a relationship between the charge transfer behaviors and photovoltaic properties. This study presents Kelvin probe force microscopy and conductive atomic force microscopy measurements of versatile perovskite films that participate in the formation of different heterojunctions, exploring local current, contact potential difference (CPD), and charge activities at the nanoscale. By comparing the values of CPD and current of these perovskite films in dark and under illumination, the charge transfer behaviors are locally illustrated, suggesting that the perovskite roles in these heterojunctions are strictly dependent on the contact layers. Furthermore, the average difference (ΔV) of the CPD values obtained in dark and under illumination for each heterojunction can be set to analyze the efficacy of the perovskite/contact layer interfaces. The ΔV polarity is related to the type of charge carrier (hole or electron), while the ΔV magnitude is related to the number of charge carrier. These results emphasize the importance of understanding of these heterojunction systems that could guide the design and optimization of the photovoltaic configuration. Kelvin probe force microscopy and conductive atomic force microscopy are applied to explore local contact potential difference (CPD), current, and charge activities of the perovskite films with different contact layers. The average difference of the CPD values of the perovskite films obtained in dark and under illumination signifies the efficacy of the perovskite/contact layer heterojunctions. [ABSTRACT FROM AUTHOR]