Search

Protective effect of ethanol extract from Hericium erinaceus cultivated with Artemisia capillaries (HEAC) on gastric mucosal damage induced by 0.15M HCl in ethanol in rats was evaluated. HEAC showed higher potent protective effect on gastritis with effective dose 50 (ED50) value of 22.6mg/kg compared those of selbex and stillen at 46.5 and 44.2 mg/kg, respectively, the presently used medicines for treating gastritis. ichloromethane fraction showed a dose-dependent protective effect on gastritis with ED50 value of 18.1 mg/kg. The biologically active component of dichloromethane fraction derived from HEAC ethanolic extract was characterized by spectroscopic analysis as scoparone with protective rate of 93% and ED50 value of 4.2 mg/kg on gastritis. Taken together, administration of HEAC and scoparone provided protective effect on the gastric lesion induced by ethanol-HCl and may therefore be a promising drug for treatment of gastritis and gastric ulcer.

Fungicidal activity against phytopathogenic fungi of diarylthiazole compound of N-[4-(4-fluoro) phenyl-2-(N-methyl)piperidin-4-yl-thiazol-5-yl]pyrimidin-2-yl-N-(3-hydroxy-methyl)phenylamine (I) have been determined to be a superior and compound I was used as the leading compounds in this study. Furthermore, the synthesis of this compound was conducted by reacting them with four functional groups, N-cyclopropyl, N-cyclopentyl, N-cyclohexyl, and N-isopropylamine instead of the phenylamine. Also, 2-aminothiazole, 2-(N-ethoxycarbonyl)piperidin-4-yl, and 2-piperidin-4-ylthiazole were introduced as the leads instead of the 2-aminothiazole group of compound I. From this scheme, VIII-1∼VIII-4 and XII-1∼XIV-4 compounds were newly synthesized and their structures were confirmed by 1H-NMR-spectrum. The fungicidal activities of all the synthesized compounds against Phytophthora capsici were examined using the whole plant method. While the EC50 value of the commercial fungicide dimethomorph and I was 4.26 mM and that of N-[4-(4-fluoro phenyl-2-(N-methyl)piperidin-4-yl-thiazol-5-yl]pyrimidin-2-yl-cyclopropylamine (XIV-2) on P. capsici was 0.84 mM. Among the XII-1∼XIV-4 chemicals, XIV-2 showed the most potential antifungal activity in vivo. Therefore, XIV-2 can be considered as a viable candidate for the control of phytopathogenic diseases characterized by P. capsici infection, and further studies will be conducted on the mode of action XIV-2.

The fungicidal activities against phytopathogenic fungi of two aminothiazole compounds of N-[4-(4-fluoro)phenyl-2-aminothiazol-5-yl]pyrimidin-2-yl-N-subst. phenylamine (V-1, V-2) have been determined and these two compounds were used as the leading compounds in this study as V-1 for N-[4-(4-fluoro)phenyl-2-aminothiazol-5-yl]pyrimidin-2-yl-N-(3-hydroxymethyl)phenylamine and V-2 for N- [4-(4-fluoro)phenyl-2-aminothiazol-5-yl] pyrimidin-2-yl-N-3-(l-hydroxyethyl)phenylamine. Further syntheses of these two compounds, V-l and V-2, were conducted by reacting them with three functional groups, 2-(N-ethoxycarbonyl)piperidin-4-yl, 2-piperidin-4-yl, and 2-(N-methyl)-piperidin-4-yl-thiazole. From this scheme, 21 compounds were newly synthesized and their structures were confirmed by 1H-NMR-spectrum. The fungicidal activities of all the synthesized compounds against Phytophthora capsici were examined using the whole plant method. While the EC50 value of the commercial fungicide dimethomorph was 4.26 mM, that of IX-3g on P. capsici was 1.03 mM. Among the 21 chemicals, IX-3g showed the most potential antifungal activity in vivo. Therefore, IX-3g may be considered as a potential candidate for the control of phytopathogenic diseases characterized by P. capsici infection, and further studies will be conducted on the mode of action IX-3g.

The liner of a pressure tunnel needs to be designed such that it can withstand the loads from the ground, the internal pressure, and minimize the development of significant pore pressures at the liner-ground interface. Pore pressures behind the liner reduce the effective stresses in the ground immediately in contact with the liner and can ultimately produce loss of support from the ground. Deformations and loads of the liner are intimately connected to the interplay that exists between liner, ground, and pore pressures in the ground. A closed-form analytical solution has been derived that accounts for the inter-relation between liner, ground, and pore pressures. Elastic response of the liner and ground, and plane strain conditions at any cross-section of the tunnel are assumed. The solution shows that stresses in the ground depend on the following dimensionless factors: relative stiffness of the ground and liner, ground Poisson’s ratio, surface slope angle, coefficient of earth pressure at rest, relative tunnel depth, and magnitude of the pore pressure behind the liner relative to the internal pressure. The minimum ground effective tangential stresses at the ground-liner interface increase with the relative stiffness of the liner, with the coefficient of earth pressure at rest, and with tunnel depth. They decrease with increasing surface slope angle and pore pressures behind the liner. As leakage through the liner increases, the pore pressures in the ground increase. This results in a decrease of effective radial and tangential stresses in the ground while displacements and loads of the liner are relatively less affected.

The magnitude and distribution of ground deformations around a tunnel are often monitored during construction and provide key information about ground-support interaction and ground behavior. Thus it is important to determine the effects of different parameters on ground deformations to accurately and effectively evaluate what contributes to ground and support behavior observed during excavation. This paper investigates one such relation: the effects of seepage on radial deformations. A number of numerical analyses have been conducted with the following assumptions: deep circular unsupported tunnel, elastic ground, isotropic far field stresses, dry ground or saturated ground with steady-state water seepage. The analyses cover a wide range of tunnel sizes, effective stresses, and pore pressures. Results from the numerical simulations confirm previous analytical solutions for normalized radial deformations behind the face (i.e. on the tunnel side of the face) of a tunnel excavated in dry ground, and have been used to propose a new analytical formulation for normalized radial displacements ahead and behind the tunnel face for both dry and saturated ground with water flow. Water seepage substantially increases the magnitude and distribution of the normalized radial deformations ahead of the face and at the tunnel face, but does not change much the displacement distribution behind the tunnel face.

We investigated the pressure dependence of the inductive coupled plasma (ICP) oxidation on the electrical characteristics of the thin oxide films. Activation energies and electron temperatures with different pressures were estimated. To demonstrate the pressure effect on the plasma oxide quality, simple N type metal-oxide-semiconductor (NMOS) transistors were fabricated and investigated in a few electrical properties. At higher pressure than 200mTorr, plasma oxide has a slightly higher on-current and a lower interfacial trap density. The on-current gain seems to be related to the field mobility increase and the lower defective interface to the electron temperature during oxidation.

To improve the IPD reliability of NAND flash memory, plasma oxidation was introduced as the post-treatment process of ONO (Oxide/Nitride/Oxide) IPD. The LP-CVD SiO2 modified by plasma oxidation showed the excellent electrical properties. e.g., low leakage current, high breakdown voltage etc. By the analysis of Tof-SIMS and XRR, we could observe the several changes of physical characteristics such as the reduction of impurities (H, N etc.), the increase of oxide density, and the improvement of oxide surface roughness. We found out the appropriate treatment condition to be able to densify oxide layer without the addition of ONO Equivalent Oxide Thickness (EOT). The LP-CVD SiO2 prepared by plasma oxidation was used for the ONO IPD of 50nm NAND flash device and also compared with the conventional LP-CVD SiO2 in the aspect of the IPD reliability.