1. Improvement of 1.3- m GaInNAs Vertical Cavity Surface Emitting Lasers Grown by MOVPE
- Author
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Shi Jing, Shen Kun, Wang Ren-fan, and Yue Ai-wen
- Subjects
Materials science ,Threshold current ,Fabrication ,business.industry ,Single-mode optical fiber ,General Physics and Astronomy ,Multiple modes ,Laser ,Epitaxy ,law.invention ,Improved performance ,Optics ,law ,Optoelectronics ,Metalorganic vapour phase epitaxy ,business - Abstract
We report the improved performance of the conventional contact 1.3 mum GaInNAs vertical cavity surface emitting lasers (VCSELs) grown by metal-organic vapour-phase epitaxy (MOVPE). A new wet etching approach was applied in the fabrication of 1.3 mum GaInNAs oxide-confined VCSELs. The threshold current of single mode device is 1.0 mA. The multiple mode devices show very low threshold currents below 2 mA at 5-85degreesC, which were the best results for 1.3 mum GaInNAs VCSELs reported. Maximum single mode output power of 0.256 mW and the maximum multiple mode power of 0.883 mW were obtained at room temperature.
- Published
- 2004