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Spin-exchange relaxation-free (SERF) co-magnetometers have promising applications in both inertial navigation and fundamental physics experiments. However, the fluctuation in the spin polarization caused by the probe beam has a non-negligible influence on the co-magnetometer signal. In this paper, a theoretical model containing three parameters of the probe beam is established by extending the coupled Bloch equation. Based on this model, the influence of probe power density on the transient and steady-state response of the SERF co-magnetometer is analyzed. According to the transient response model, a new measurement method for transverse optical pumping of the probe beam is proposed. Then, for the steady-state response model, a steady-state error suppression method is suggested by adjusting the degree of circular polarization of the probe beam. Eventually, the suppression method is used to refine the SERF co-magnetometer, achieving a suppression rate of 70.31% in transverse electron spin polarization fluctuations, thus improving the co-magnetometer to a stability of 0.0079∘ h−1. To our knowledge, this is better than what has been reported so far. [ABSTRACT FROM AUTHOR]

We present a comparative study of differential cross sections (DCSs) and spin polarizations for positron scattering from C60 and A@C60, elucidating the role of encapsulation of rare gas atoms inside the giant C60 cage. A comparison is provided with the earlier work for elastic positron-C60 scattering. We find a very good agreement even when a model potential is used for the positron-C60 interaction. Also, we evaluate similarities and differences between the positron and electron DCSs and spin polarizations, both from bare and endohedral targets. To mark resonance features on the scattering dynamics, DCSs and spin polarizations are calculated at resonant energies, which showcase different characteristics compared to the cases where the positron energy is non-resonant. In order to account for a complete picture of the scattering process, an absorption potential is included in the total scattering field. For the sake of illustrating the impact of individual interactions and their interplay as a whole, DCSs and spin polarizations are reported including several scattering interactions alternatively. [ABSTRACT FROM AUTHOR]

The impact of inter-valley scattering in modifying the density of optically injected spin polarized electrons in AlxGa1−xAs/GaAs heterostructure is investigated. Polarization resolved photoluminescence excitation measurements are performed for studying the spectral dependence of degree of circular polarization (DCP) of photoluminescence signal emanating from an adjacent quantum well layer. The experimental DCP spectra is found to deviate from the theoretically calculated curve at high excitation energy and the deviation is seen to widen with the Al-content of AlxGa1−xAs barrier layer. In the past, researchers had attributed similar deviations to the Dyakonov–Perel (DP) spin relaxation mechanism which dominates the electrons spin dynamics at high excitation energy. However, we find that the inter-valley scattering along with the DP mechanism decide the shape of optical spin orientation spectra at higher energy. In fact, at higher Al-content, the inter-valley scattering in AlxGa1–xAs layer becomes the most dominant mechanism to govern the steady state electron spin polarization at the band edge. A numerical model is also proposed for estimating the steady state electron spin polarization at zone centre by including the inter-valley scattering, energy relaxation and DP spin relaxation mechanisms. [ABSTRACT FROM AUTHOR]

Organic multiferroic tunnel junctions (OMFTJs) with multi-resistance states have been proposed and have drawn intensive interests due to their potential applications, for example in memristor and spintronics based synapse devices. The ferroelectric control of spin polarization at a ferromagnet/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized. However, there is still a lack of understanding of the transport properties in OMFTJs, especially the interplay between the ferroelectric domain structure in the organic barrier and the spin polarized electron tunneling through the barrier. Here, we report on a systematic study of the temperature dependent transport behavior in La0.6Sr0.4MnO3/PVDF/Co OMFTJs. It is found that thermal fluctuation of the ferroelectric domains play an important role on the transport properties. When T > 120 K, the opposite temperature dependence of resistance for up and down ferroelectric polarization states results in a rapid diminishing of the tunneling electroresistance. These results contribute to the understanding of the transport properties for designing high performance OMFTJs for memristor and spintronics applications. [ABSTRACT FROM AUTHOR]

We theoretically study the inverse Faraday effect, i.e., the optical induction of spin polarization with circularly polarized light, by particularly focusing on effects of band dispersions and Fermi surfaces in crystal systems with the spin–orbit interaction (SOI). By numerically solving the time-dependent Schrödinger equation of a tight-binding model with the Rashba-type SOI, we reproduce the light-induced spin polarization proportional to where E0 and ω are the electric-field amplitude and the angular frequency of light, respectively. This optical spin induction is attributed to dynamical magnetoelectric coupling between the light electric field and the electron spins mediated by the SOI. We elucidate that the magnitude and sign of the induced spin polarization sensitively depend on the electron filling. To understand these results, we construct an analytical theory based on the Floquet theorem. The theory successfully explains the dependencies on E0 and ω and ascribes the electron-filling dependence to a momentum-dependent effective magnetic field governed by the Fermi-surface geometry. Several candidate materials and experimental conditions relevant to our theory and model parameters are also discussed. Our findings will enable us to engineer the magneto-optical responses of matters via tuning the material parameters. [ABSTRACT FROM AUTHOR]

The fascinating Dirac cone in honeycomb graphene, which underlies many unique electronic properties, has inspired the vast endeavors on pursuing new two-dimensional (2D) Dirac materials. Based on the density functional theory method, a 2D material Zn3Si2 of honeycomb transition-metal silicide with intrinsic Dirac cones has been predicted. The Zn3Si2 monolayer is dynamically and thermodynamically stable under ambient conditions. Importantly, the Zn3Si2 monolayer is a room-temperature 2D Dirac material with a spin–orbit coupling energy gap of 1.2 meV, which has an intrinsic Dirac cone arising from the special hexagonal lattice structure. Hole doping leads to the spin polarization of the electron, which results in a Dirac half-metal feature with single-spin Dirac fermion. This novel stable 2D transition-metal-silicon-framework material holds promises for electronic device applications in spintronics. [ABSTRACT FROM AUTHOR]

Spin-polarized electron transport through the zigzag graphene nanoribbon (ZGNR) is investigated by assuming that it couples with different charomium triiodide (CrI3) geometries, respectively. That is to say that the ZGNR either absorbs the monolayer CrI3 or one CrI3 molecule, or couples laterally with one CrI3 molecule. It is found that the spin polarization in the electron transport process is tightly dependent on the CrI3 geometry and the ZGNR-CrI3 coupling manner. When the CrI3 molecule is absorbed on the surface of the ZGNR, the spin-polarization efficiency is much higher than the other two cases, accompanied by the wide spin-polarization region. This work provides a new kind of scheme for optimizing the spin polarization in graphene-based materials. [ABSTRACT FROM AUTHOR]

We propose a Rashba three-terminal double-quantum-dot device to generate a spin-polarized current and manipulate the electron spin in each quantum dot by utilizing the temperature gradient instead of the electric bias voltage. This device possesses a nonresonant tunneling channel and two resonant tunneling channels. The Keldysh nonequilibrium Green's function techniques are employed to determinate the spin-polarized current flowing from the electrodes and the spin accumulation in each quantum dot. We find that their signs and magnitudes are well controllable by the gate voltage or the temperature gradient. This result is attributed to the change in the slope of the transmission probability at the Fermi levels in the low-temperature region. Importantly, an obviously pure spin current can be injected into or extracted from one of the three electrodes by properly choosing the temperature gradient and the gate voltages. Therefore, the device can be used as an ideal thermal generator to produce a pure spin current and manipulate the electron spin in the quantum dot. [ABSTRACT FROM AUTHOR]

Developing accurate self-assembly is the key for constructing functional materials from a bottom-up approach. At present, it is mainly hindered by building blocks and driving modes. We design a new self-assembly method based on the magnetic coupling between spin-polarized electrons. First-principles calculations show that spin-polarized electrons from different endohedral metallofullerene (EMF) superatoms can pair each other to ensure a one-dimensional extending morphology. Furthermore, without ligand passivation, the EMF superatoms maintain their electronic structures robustly in self-assembly owing to the core-shell structure and the atomic-like electron arrangement rule. Therefore, it should noted that the magnetic coupling of monomeric electron spin polarization can be an important driving mechanism for high-precision self-assembly. These results represent a new paradigm for self-assembly and offer fresh opportunities for functional material construction at the atomic level. [ABSTRACT FROM AUTHOR]

Spin polarization in ferromagnetic metal/insulator/spin-filter barrier/nonmagnetic metal, referred to as quasi-magnetic tunnel junctions, is studied within the free-electron model. Our results show that large positive or negative spin-polarization can be obtained at high bias in quasi-magnetic tunnel junctions, and within large bias variation regions, the degree of spin-polarization can be linearly tuned by bias. These linear variation regions of spin-polarization with bias are influenced by the barrier thicknesses, barrier heights and molecular fields in the spin-filter (SF) layer. Among them, the variations of thickness and heights of the insulating and SF barrier layers have influence on the value of spin-polarization and the linear variation regions of spin-polarization with bias. However, the variations of molecular field in the SF layer only have influence on the values of the spin-polarization and the influences on the linear variation regions of spin-polarization with bias are slight. [ABSTRACT FROM AUTHOR]