1. Two-dimensional GdI2/GeC van der Waals heterostructure: Bipolar magnetic semiconductor, high critical temperature and large magnetic anisotropy.
- Author
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Fan, Xueping, Jiang, Jiawei, Li, Rui, Guo, Liu, and Mi, Wenbo
- Subjects
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MAGNETIC semiconductors , *MAGNETIC anisotropy , *CRITICAL temperature , *HIGH temperatures , *MONTE Carlo method , *FERRIMAGNETIC materials - Abstract
The band alignment, intrinsic ferromagnetism, Dzyaloshinskii-Moriya interaction, magnetic anisotropy and critical temperature (T C) of a GdI 2 /GeC van der Waals (vdW) heterostructure were systematically investigated by first-principles calculations and Monte Carlo simulations. The proposed GdI 2 /GeC vdW heterostructure is a bipolar magnetic semiconductor with Type-I band alignment, large in-plane magnetic anisotropy energy (MAE) of − 0.912 mJ/m2 and high critical temperature of 466 K. In addition, under biaxial strains, the heterostructure transformed from semiconductor into metal, while the easy magnetization axis maintained in-plane and T C increased. The results indicated that the GdI 2 /GeC vdW heterostructure presented large MAE and high T C , having potential applications in spintronic devices. [Display omitted] ● The heterostructures is a bipolar magnetic semiconductor. ● The heterostructures with large in-plane magnetic anisotropy. ● The heterostructures with high critical temperature 466 K. [ABSTRACT FROM AUTHOR]
- Published
- 2023
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