1. Nonstoichiometric doping and Bi antisite defect in single crystal Bi2Se3.
- Author
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Huang, F.-T., Chu, M.-W., Kung, H. H., Lee, W. L., Sankar, R., Liou, S.-C., Wu, K. K., Kuo, Y. K., and Chou, F. C.
- Subjects
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NONSTOICHIOMETRIC compounds , *DOPING agents (Chemistry) , *ANTISITE defects , *BISMUTH selenide , *CRYSTAL growth , *SINGLE crystals - Abstract
We studied the defects of Bi2Se3 generated from Bridgman growth of stoichiometric and nonstoichiometric self-fluxes. Growth habit, lattice size, and transport properties are strongly affected by the types of defects generated. Major defect types of the BiSe antisite and partial Bi2-layer intercalation are identified through combined studies of direct atomic-scale imaging with scanning transmission electron microscopy in conjunction with energy-dispersive x-ray spectroscopy, x-ray diffraction, and Hall effect measurements. We propose a consistent explanation to the origin of defect type, growth morphology, and transport property. [ABSTRACT FROM AUTHOR]
- Published
- 2012
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