Search

Self-assembled InAsSb quantum dots (QD) on (001) InP substrates have been grown using metalorganic vapor phase epitaxy. The dot density and size are found to be strongly dependent on the presence of arsine. Direct deposition of InSb on InP and GaSb substrates formed large islands of InSb with low density of less than 5×10[sup 9]/cm[sup 2], however, InAsSb QDs of density as high as 4×10[sup 10]/cm[sup 2] could be self-assembled by alternating group III and group V precursors, and high density almost pure InSb QDs were achieved on In[sub 0.53]Ga[sub 0.47]As/InP. The formation of high density InAsSb QDs is a result of a local nonequilibrium process and a reduction in mobility of In adatoms on the growth surface due to the presence of arsenic atoms, and in the case of high density almost pure InSb QDs on InGaAs/InP, the InAs interface layer is believed to be responsible. Photoluminescence shows that InSb QDs emit light at room temperature in the range of 1.7–2.2 μm. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]